Including Organic Material In Active Region Patents (Class 257/E27.117)
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Patent number: 9029850Abstract: An organic light-emitting display apparatus includes a thin film transistor including an active layer, a gate electrode, source and drain electrodes, a first insulating layer between the active layer and the gate electrode, and a second insulating layer between the gate electrode and the source and drain electrodes, a third insulating layer covering the source and drain electrodes, the third insulating layer being an organic insulating layer, a pixel electrode including a semi-transparent metal layer and having an end located in a trench formed around the first insulating layer, a fourth insulating layer including an opening exposing a top surface of the pixel electrode, the fourth insulating layer being an organic insulating layer, an organic light-emitting layer on the pixel electrode, and a counter electrode on the organic light-emitting layer.Type: GrantFiled: May 16, 2014Date of Patent: May 12, 2015Assignee: Samsung Display Co., Ltd.Inventors: Yul-Kyu Lee, Kyung-Hoon Park, Sun Park, Yeong-Ho Song, Ji-Hoon Song
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Patent number: 9018740Abstract: A field effect transistor (1) including: a semiconducting substrate (2) having two areas doped with electric charge carriers forming a source area (3) and a drain area (4), respectively; a dielectric layer positioned above the semiconducting substrate (2) between the source (3) and the drain (4) and forming the gate dielectric (9) of the field effect transistor (1); a gate (11) consisting of a reference electrode (8) and of a conductive solution (10), the solution (10) being in contact with the gate dielectric (9); and the gate dielectric (9) consists of a layer of lipids (13) in direct contact with the semiconducting layer (2). The invention also relates to a method for manufacturing such a field effect transistor (1) is disclosed.Type: GrantFiled: November 30, 2012Date of Patent: April 28, 2015Assignee: Centre National de la Recherche Scientifique (C.N.R.S)Inventors: Anne Charrier, Hervé Dallaporta, Tuyen Nguyen Duc
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Patent number: 8975636Abstract: An organic light emitting display device may include a substrate having a switching device, a first electrode including a reflection structure and being electrically connected to the switching device, a pixel defining layer disposed on the first electrode to define a luminescent region and a nonluminescent region, an organic light emitting structure disposed over the pixel defining layer, and a second electrode disposed over the organic light emitting structure. The first electrode may include the reflection structure such as a recess structure or a protrusion structure, so that the organic light emitting display device may ensure an enhanced light efficiency. Additionally, pixels of the organic light emitting display device may have improved uniformity because an opening of the pixel defining layer may have a rounded shape.Type: GrantFiled: March 8, 2012Date of Patent: March 10, 2015Assignee: Samsung Display Co., Ltd.Inventors: Il-Nam Kim, Won-Sang Park, Min-Woo Kim, Soo-Min Baek, Jae-Kyoung Kim
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Patent number: 8901549Abstract: The present invention provides an organic light emitting diode touch display panel including a substrate, a plurality of first electrodes and a plurality of second electrodes disposed on the substrate, a plurality of light emitting layers, a plurality of dielectric layers, a plurality of first electrode stripes, and a plurality of second stripes. Each light emitting layer is disposed on each first electrode, and each dielectric layer is disposed on each second electrode. Each first electrode stripe is disposed on the light emitting layers in each row, and each second electrode stripe is disposed on the dielectric layers in each row. Each first electrode, each light emitting layer and each first electrode stripe form an organic light emitting diode, and each second electrode, each dielectric layer and each second electrode stripe form a touch sensing capacitor.Type: GrantFiled: July 1, 2013Date of Patent: December 2, 2014Assignee: HannStar Display Corp.Inventors: Chien-Hsiang Huang, Kun-Hua Tsai, Jun-Shih Chung, Chun-Hsi Chen
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Patent number: 8830685Abstract: A flexible sheet of organic polymer material, may include a monolithically fabricated array of one or more types of cells juxtaposed among them to form a multi-cell sheet. Each cell may include a self consistent, organic base integrated circuit, replicated in each cell of same type of the array, and shares, in common with other cells of same type, at least a conductor layer of either an electrical supply rail of the integrated circuit or of an input/output of the integrated circuit. A piece of the multi-cell, sheet including any number of self consistent integrated circuit cells, may be severed from the multi-cell sheet by cutting the sheet along intercell boundaries or straight lines, with a reduced affect on the operability of any cell spared by the cutting.Type: GrantFiled: February 25, 2011Date of Patent: September 9, 2014Assignee: STMicroelectronics S.R.L.Inventor: Manuela La Rosa
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Patent number: 8809841Abstract: A light-emitting element which at least includes a monomolecular layer including a luminescent center material with a fluorescent light-emitting property, and a monomolecular layer including a host material with a carrier (electron or hole)-transport property and a band gap larger than a band gap (note that a band gap refers to the energy difference between a HOMO level and a LUMO level) of the luminescent center material, between a pair of electrodes, in which the monomolecular layer including the host material and the monomolecular layer including the luminescent center material share the same interface, is provided.Type: GrantFiled: November 23, 2011Date of Patent: August 19, 2014Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Kunihiko Suzuki, Harue Osaka, Masahiro Takahashi
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Patent number: 8779506Abstract: Disclosed is a semiconductor component arrangement and a method for producing a semiconductor component arrangement. The method comprises producing a trench transistor structure with at least one trench disposed in the semiconductor body and with at least an gate electrode disposed in the at least one trench. An electrode structure is disposed in at least one further trench and comprises at least one electrode. The at least one trench of the transistor structure and the at least one further trench are produced by common process steps. Furthermore, the at least one electrode of the electrode structure and the gate electrode are produced by common process steps.Type: GrantFiled: January 10, 2011Date of Patent: July 15, 2014Assignee: Infineon Technologies AGInventors: Markus Zundel, Franz Hirler, Norbert Krischke
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Patent number: 8779415Abstract: Organic polymeric multi-metallic alkoxide or aryloxide composites are used as dielectric materials in various devices with improved properties such as improved mobility. These composites comprise an organic polymer comprising metal coordination sites, and multi-metallic alkoxide or aryloxide molecules that are coordinated with the organic polymer, the multi-metallic alkoxide or aryloxide molecules being represented by: (M)n(OR)x wherein at least one M is a metal selected from Group 2 of the Periodic Table and at least one other M is a metal selected from any of Groups 3 to 12 and Rows 4 and 5 of the Periodic Table, n is an integer of at least 2, R represents the same or different alkyl or aryl groups, and x is an integer of at least 2.Type: GrantFiled: November 8, 2012Date of Patent: July 15, 2014Assignee: Eastman Kodak CompanyInventors: Deepoak Shukla, Dianne M. Meyer
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Patent number: 8704212Abstract: It is an object of the present invention to provide a material having a high Tg and a wide energy gap. The present invention provides a spirofluorene derivative represented by General Formula 1. (In the formula, R1 is any one of hydrogen, an alkyl group having 1 to 4 carbon atoms, or a group represented by General Formula 2. Each of R2 and R3 is either hydrogen or an alkyl group having 1 to 4 carbon atoms and may be identical or different. R4 is an aryl group having 6 to 15 carbon atoms.Type: GrantFiled: February 25, 2011Date of Patent: April 22, 2014Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Sachiko Kawakami, Harue Nakashima
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Patent number: 8501530Abstract: It is an object of the present invention to form an organic transistor including an organic semiconductor having high crystallinity without loosing an interface between an organic semiconductor of a channel where carriers are spread out and a gate insulating layer and deteriorating a yield. A semiconductor device according to the present invention has a stacked structure of organic semiconductor layers, and at least the upper organic semiconductor layer is in a polycrystalline or a single crystalline state and the lower organic semiconductor layer is made of a material serving as a channel. Carrier mobility can be increased owing to the upper organic semiconductor layer having high crystallinity; thus, insufficient contact due to the upper organic semiconductor layer can be compensated by the lower organic semiconductor layer.Type: GrantFiled: January 20, 2011Date of Patent: August 6, 2013Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shinobu Furukawa, Ryota Imahayashi
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Patent number: 8497494Abstract: An organic thin film transistor includes source and drain electrodes spaced apart from each other on a substrate, an organic semiconductor layer between the source and drain electrodes on the substrate, a gate insulating layer including an organic insulating material on the organic semiconductor layer, the gate insulating layer having a thickness of about 1,800 ? to about 2,500 ?, and a gate electrode on the gate insulating layer.Type: GrantFiled: May 11, 2007Date of Patent: July 30, 2013Assignee: LG Display Co., Ltd.Inventor: Dae-Won Kim
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Patent number: 8461573Abstract: Organic thin film devices that included an organic thin film subjected to a selected dose of a selected energy of ions exhibited a stabilized mobility (?) and threshold voltage (VT), a decrease in contact resistance RC, and an extended operational lifetime that did not degrade after 2000 hours of operation in the air.Type: GrantFiled: May 6, 2010Date of Patent: June 11, 2013Assignee: Los Alamos National Security, LLCInventors: Michael Anthony Nastasi, Yongqiang Wang, Beatrice Fraboni, Piero Cosseddu, Annalisa Bonfiglio
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Patent number: 8417081Abstract: An optocoupler including: a substrate comprising a photodetector; a transparent electrically-insulating layer disposed over the photodetector; and an organic electroluminescent device having an organic electroluminescent layer disposed between a first and a second electrode disposed over the transparent electrically-insulating layer; the photodetector arranged to detect light emitted from the organic electroluminescent device; wherein the optocoupler comprises a second current path between the first and second electrodes in addition to a first current path between the first and second electrode which in operation causes the organic electroluminescent layer to emit light.Type: GrantFiled: June 19, 2007Date of Patent: April 9, 2013Assignee: Cambridge Display Technology LimitedInventors: Julian Carter, Jonathan Halls
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Patent number: 8357849Abstract: A photoactive device is provided. The device includes a first electrode, a second electrode, and a photoactive region disposed between and electrically connected to the first and second electrodes. The photoactive region further includes an organic donor layer and an organic acceptor layer that form a donor-acceptor heterojunction. The mobility of holes in the organic donor region and the mobility of electrons in the organic acceptor region are different by a factor of at least 100, and more preferably a factor of at least 1000. At least one of the mobility of holes in the organic donor region and the mobility of electrons in the organic acceptor region is greater than 0.001 cm2/V-sec, and more preferably greater than 1 cm2/V-sec. The heterojunction may be of various types, including a planar heterojunction, a bulk heterojunction, a mixed heterojunction, and a hybrid planar-mixed heterojunction.Type: GrantFiled: September 27, 2004Date of Patent: January 22, 2013Assignee: The Trustees of Princeton UniversityInventors: Peter Peumans, Stephen R. Forrest
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Patent number: 8334527Abstract: Provided is an electroluminescent device which has a luminescent layer including quantum dots and which are excellent in life characteristics. An electroluminescent device (1) comprises a first electrode layer (3), a luminescent layer (4) formed on the first electrode layer, and a second electrode layer (5) formed on the luminescent layer. The luminescent layer uses quantum dots (12), each quantum dot being surrounded by silane coupling agent (11).Type: GrantFiled: September 26, 2008Date of Patent: December 18, 2012Assignee: Dai Nippon Printing Co., Ltd.Inventors: Yasuhiro Iizumi, Masaya Shimogawara
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Patent number: 8324616Abstract: An optoelectronic device including a first electrode, an active layer disposed on the first electrode, a second electrode disposed on the active layer, and a self-assembled monolayer interposed between the first electrode and the active layer, interposed between the active layer and the second electrode, or disposed inside the active layer, wherein the self-assembled monolayer includes a first compound and a second compound having different functional groups from each other.Type: GrantFiled: February 4, 2010Date of Patent: December 4, 2012Assignee: Samsung Electronics Co., Ltd.Inventors: Bulliard Xavier, Woong Choi, Jae-Young Choi
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Patent number: 8222096Abstract: A method for forming an organic semiconductor thin film includes the steps of forming a mixed ink layer on a principal plane of a printing plate, the mixed ink layer including a mixture of an organic semiconductor material incapable of transcription and an organic material capable of transcription from the printing plate to a substrate in ink form dissolved in a solvent, and forming an organic semiconductor thin film by transcribing the mixed ink layer onto the substrate by transcribing the mixed ink layer on the printing plate to the substrate.Type: GrantFiled: July 23, 2009Date of Patent: July 17, 2012Assignee: Sony CorporationInventor: Akihiro Nomoto
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Patent number: 8212242Abstract: The present invention relates to an OLED display, and an OLED display according to an exemplary embodiment of the present invention includes a substrate member, an OLED including a first electrode formed on the substrate member, an organic emission layer formed on the first electrode, and a second electrode formed on the organic emission layer, and a cover layer formed on the second electrode and covering the OLED. The cover layer includes a cover main body and a corner-cube pattern formed on an opposite side of a side that faces the second electrode among both sides of the cover main body.Type: GrantFiled: October 28, 2009Date of Patent: July 3, 2012Assignee: Samsung Mobile Display Co., Ltd.Inventors: Eun-Ah Kim, Soon-Ryong Park, Woo-Suk Jung, Hee-Chul Jeon, Noh-Min Kwak, Hee-Seong Jeong, Joo-Hwa Lee, Chul-Woo Jeong
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Patent number: 8188461Abstract: When an electrode is formed over an organic layer, a temperature is limited because the organic layer can be influenced depending on a temperature in forming the electrode. Therefore, there are problems that an expected electrode cannot be formed, and miniaturization of an element is inhibited. The present invention provides a structure of an organic memory element in which two electrodes are provided in the same layer as two terminals of the memory element, and a layer containing an organic compound is provided between the electrodes. By narrowing a distance between the two electrodes, writing can be performed at low voltage. In addition, a structure of the memory element is simplified, and the area of the memory element can be reduced.Type: GrantFiled: May 22, 2006Date of Patent: May 29, 2012Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Takehisa Sato, Kiyoshi Kato
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Patent number: 8134149Abstract: The present invention has an object of providing a light emitting device including an OLED formed on a plastic substrate, which can prevent the degradation due to penetration of moisture or oxygen. On a plastic substrate, a plurality of films for preventing oxygen or moisture from penetrating into an organic light emitting layer in the OLED (hereinafter, referred to as barrier films) and a film having a smaller stress than that of the barrier films (hereinafter, referred to as a stress relaxing film), the film being interposed between the barrier films, are provided. Owing to a laminate structure of a plurality of barrier films, even if a crack occurs in one of the barrier films, the other barrier film(s) can effectively prevent moisture or oxygen from penetrating into the organic light emitting layer. Moreover, the stress relaxing film, which has a smaller stress than that of the barrier films, is interposed between the barrier films, thereby making it possible to reduce a stress of the entire sealing film.Type: GrantFiled: May 16, 2011Date of Patent: March 13, 2012Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Toru Takayama, Mai Akiba
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Patent number: 8115198Abstract: In an array R of field-effect transistors for detecting analytes, each transistor of the array comprises a gate G, a semiconductor nanotube or nanowire element NT connected at one end to a source electrode S and at another end to a drain electrode D, in order to form, at each end, a junction J1, J2 with the channel. At least transistors FET1,1, FET1,2 of the array are differentiated by a different conducting material (m1, m2) of the source electrode S and/or drain electrode D.Type: GrantFiled: May 24, 2006Date of Patent: February 14, 2012Assignee: Thales and Ecole PolytechniqueInventors: Paolo Bondavalli, Pierre Legagneux, Pierre Le Barny, Didier Pribat, Julien Nagle
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Patent number: 8106385Abstract: Disclosed is materials design for prolonging the duration of the low relative dielectric constant of an organic siloxane film having a low relative dielectric constant. Specifically, in an organic siloxane film having a relative dielectric constant of not more than 2.1, the elemental ratio of carbon to silicon in the film is set to not less than 0.10 and not more than 0.55.Type: GrantFiled: June 17, 2005Date of Patent: January 31, 2012Assignee: Hitachi Chemical Co., Ltd.Inventors: Daisuke Ryuzaki, Hiroshi Fukuda
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Patent number: 8076681Abstract: A high-efficiency, white organic electroluminescent device has such a structure that its emission layer is obtained by laminating sub-emission layers of red, green, and blue, respectively. The green sub-emission layer contacting a hole transport layer has a delayed fluorescent material, and the red sub-emission layer has a phosphorescent light emitting material.Type: GrantFiled: October 5, 2009Date of Patent: December 13, 2011Assignee: Canon Kabushiki KaishaInventors: Toshifumi Mori, Koichi Suzuki, Akira Tsuboyama, Satoru Shiobara, Kenichi Ikari
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Patent number: 8039833Abstract: An electronic device containing a polythiophene wherein R represents a side chain, m represents the number of R substituents; A is a divalent linkage; x, y and z represent, respectively, the number of Rm substituted thienylenes, unsubstituted thienylenes, and divalent linkages A, respectively, in the monomer segment subject to z being 0 or 1, and n represents the number of repeating monomer segments in the polymer or the degree of polymerization.Type: GrantFiled: May 20, 2010Date of Patent: October 18, 2011Assignee: Xerox CorporationInventors: Beng S. Ong, Ping Liu, Lu Jiang, Yu Qi, Yiliang Wu
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Publication number: 20110248248Abstract: An organic semiconductor device includes a gate electrode above a substrate. A gate insulation film is over the gate electrode. A first electrode is above the gate insulation film. A second electrode is above the gate insulation film. The second electrode is annular and surrounds the first electrode. An organic semiconductor layer is above the gate insulation film and over the first electrode. The second electrode surrounds the organic semiconductor layer and defines an outer periphery of the organic semiconductor layer. A conductive guiding member is above the gate insulation film. The conductive guiding member is annular and surrounds the second electrode. A protective film is above the gate insulation film and over the organic semiconductor layer and the second electrode. The conductive guiding member surrounds the protective film and defines an outer periphery of the protective film.Type: ApplicationFiled: April 14, 2011Publication date: October 13, 2011Applicant: PANASONIC CORPORATIONInventor: Takaaki UKEDA
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Publication number: 20110248255Abstract: A method of manufacturing a thin film transistor array panel is provided, the method includes forming a gate line on a substrate; forming a gate insulating layer on the gate line; forming a data line and a drain electrode on the gate insulating layer; forming an organic semiconductor layer on the data line, the drain electrode and an exposed portion of the gate insulating layer between the data line and the drain electrodel; forming a protective member fully covering the organic semiconductor layer; forming a passivation layer on the protective layer, the data line, and the drain electrode; forming a contact hole in the passivation layer to expose a portion of the drain electrode; and forming a pixel electrode on the passivation layer, the pixel electrode connected to the drain electrode through the contact hole.Type: ApplicationFiled: June 21, 2011Publication date: October 13, 2011Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Bo-Sung KIM, Woo-Jae LEE, Min-Seong RYU
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Patent number: 8013325Abstract: The present invention relates to a thin film transistor, a method thereof and an organic light emitting device including the thin film transistor. According to an embodiment of the present invention, the thin film transistor includes a substrate, a control electrode, an insulating layer, a first electrode and a second electrode, a first ohmic contact layer and a second ohmic contact layer, and a semiconductor layer. The control electrode is formed on the substrate, and the insulating layer is formed on the control electrode. The first and the second electrodes are formed on the insulating layer. The first ohmic contact layer and the second ohmic contact layer are formed on the first electrode and the second electrode. The semiconductor layer is formed on the first ohmic contact layer and the second ohmic contact layer to fill between the first and the second electrodes.Type: GrantFiled: June 28, 2007Date of Patent: September 6, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: Jong-Moo Huh, Kyu-Sik Cho, Kunal Girotra, Joo-Hoo Choi, Byoung-June Kim
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Patent number: 8013326Abstract: An organic thin film transistor substrate includes a gate electrode formed on a substrate, a gate insulation layer formed on the gate electrode to have a source-connecting portion and a drain-seating groove, a source electrode formed in the source-connecting portion, a drain electrode formed in the drain-seating groove and an organic semiconductor layer contacting the gate insulation layer, the source electrode and the drain electrode.Type: GrantFiled: August 14, 2008Date of Patent: September 6, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: Tae-Young Choi, Seong-Sik Shin, Bo-Sung Kim
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Patent number: 7999253Abstract: An organic transistor is disclosed that has an organic semiconductor layer patterned with high resolution. The organic transistor includes a gate electrode, a gate insulting film, a source electrode, a drain electrode, and an organic semiconductor layer formed of an organic semiconductor material. The gate electrode, the gate insulting film, the source electrode, the drain electrode, and the organic semiconductor layer are formed on a substrate. At least one of the source electrode and the drain electrode has an opening.Type: GrantFiled: July 19, 2007Date of Patent: August 16, 2011Assignee: Ricoh Company, Ltd.Inventors: Takumi Yamaga, Ikue Kawashima, Yoshikazu Akiyama
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Patent number: 7964874Abstract: A semiconductor display device with an interlayer insulating film in which surface levelness is ensured with a limited film formation time, heat treatment for removing moisture does not take long, and moisture in the interlayer insulating film is prevented from escaping into a film or electrode adjacent to the interlayer insulating film. A TFT is formed and then a nitrogen-containing inorganic insulating film that transmits less moisture compared to organic resin film is formed so as to cover the TFT. Next, organic resin including photosensitive acrylic resin is applied and an opening is formed by partially exposing the organic resin film to light. The organic resin film where the opening is formed, is then covered with a nitrogen-containing inorganic insulating film which transmits less moisture than organic resin film does.Type: GrantFiled: May 19, 2008Date of Patent: June 21, 2011Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Satoshi Murakami, Masahiko Hayakawa, Kiyoshi Kato, Mitsuaki Osame, Takashi Hirosue, Saishi Fujikawa
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Patent number: 7960199Abstract: A thin film transistor array substrate and a fabricating method thereof are disclosed. The thin film transistor array substrate protects a thin film transistor without a protective film and accordingly reduces the manufacturing cost. In the thin film transistor array substrate, a gate electrode is connected to a gate line. A source electrode is connected to a data line crossing the gate line to define a pixel area. A drain electrode is opposed to the source electrode with a channel therebetween. A semiconductor layer is in the channel. A pixel electrode in the pixel area contacts the drain electrode over substantially the entire overlapping area between the two. A channel protective film is provided on the semiconductor layer corresponding to the channel to protect the semiconductor layer.Type: GrantFiled: August 14, 2009Date of Patent: June 14, 2011Assignee: LG Display Co., Ltd.Inventors: Young Seok Choi, Byung Yong Ahn, Ki Su Cho, Hong Woo Yu
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Patent number: 7893538Abstract: An insulating-film-forming composition for a semiconductor device comprising an organic silica sol with a carbon atom content of 11 to 17 atom % and an organic solvent is disclosed. The organic silica sol comprises a hydrolysis-condensation product P1 and a hydrolysis-condensation product P2. The hydrolysis-condensation product P1 is obtained by hydrolyzing and condensing (A) a silane monomer comprising a hydrolyzable group and (B) a polycarbosilane comprising a hydrolyzable group in the presence of (C) a basic catalyst, and the hydrolysis-condensation product P2 is obtained by hydrolyzing and condensing (D) a silane monomer comprising a hydrolyzable group.Type: GrantFiled: January 31, 2007Date of Patent: February 22, 2011Assignee: JSR CorporationInventors: Hisashi Nakagawa, Tatsuya Yamanaka, Masahiro Akiyama, Terukazu Kokubo, Youhei Nobe
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Patent number: 7888738Abstract: Embodiments of the present invention provide a microelectronic structure including a conductive element contacting a bulk semiconductor region of a substrate, the bulk semiconductor region being separated from a semiconductor-on-insulator (“SOI”) layer of the substrate by a buried dielectric layer.Type: GrantFiled: January 12, 2010Date of Patent: February 15, 2011Assignee: International Business Machines CorporationInventors: Amanda L. Tessier, Brian L. Tessier, Bryant C. Colwill
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Patent number: 7888671Abstract: Provided is a semiconductor device comprising an organic semiconductor element A and an organic semiconductor element B, wherein the organic semiconductor element A has a source electrode and a drain electrode disposed on a surface of a substrate; a channel gap disconnecting the source electrode and the drain electrode; an organic semiconductor layer disposed on the source electrode, the drain electrode and the channel gap; an insulating film disposed on the organic semiconductor layer; a gate electrode disposed on the insulating film; a bank defining the organic semiconductor layer; a and groove through the bank, a distance between the apex of the bank and the surface of a substrate is greater than a distance between the apex of the channel gap and the surface of the substrate, and the organic semiconductor element B has a source electrode or a drain electrode connected with the gate electrode of the organic semiconductor element A via the groove through the bank of the organic semiconductor element A.Type: GrantFiled: December 14, 2007Date of Patent: February 15, 2011Assignee: Panasonic CorporationInventors: Hidehiro Yoshida, Hisao Nagai, Yoshiro Kitamura
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Patent number: 7868327Abstract: A thin film transistor (TFT) and a method of manufacturing the same, and more particularly, a TFT for reducing leakage current and a method of manufacturing the same are provided. The TFT includes a flexible substrate, a diffusion preventing layer formed on the flexible substrate, a buffer layer formed of at least two insulated materials on the diffusion preventing layer, a semiconductor layer formed on a region of the buffer layer to include a channel layer and a source and drain region, a gate insulating layer formed on the buffer layer including the semiconductor layer, a gate electrode formed on the gate insulating layer in a region corresponding to the channel layer, an interlayer insulating layer formed on the gate insulating layer including the gate electrode, and source and drain electrodes formed in the interlayer insulating layer to include a predetermined contact hole that exposes at least a region of the source and drain region and to be connected to the source and drain region.Type: GrantFiled: August 22, 2006Date of Patent: January 11, 2011Assignee: Samsung Mobile Display Co., Ltd.Inventors: Jae Kyeong Jeong, Hyun Soo Shin, Se Yeoul Kwon, Yeon Gon Mo
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Publication number: 20100327282Abstract: A semiconductor device includes: a substrate; a p-type organic transistor including an organic semiconductor layer arranged on or above the substrate; and an n-type inorganic transistor including an inorganic semiconductor layer arranged on or above the organic transistor, wherein a channel region of the inorganic transistor overlaps a channel region of the organic transistor at least partially in a plan view.Type: ApplicationFiled: June 22, 2010Publication date: December 30, 2010Applicants: Seiko Epson Corporation, Ryukoku UniversityInventors: Takashi Aoki, Mutsumi Kimura, Takashi Nakanishi, Mariko Sakemi
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Patent number: 7842950Abstract: A display device including a first substrate, a first subpixel electrode, a second subpixel electrode corresponding to the first substrate, a second substrate and a common electrode formed on the second substrate is provided. The first subpixel electrode and the second subpixel electrode are formed on the first substrate. The second subpixel electrode is spaced apart from the first subpixel electrode. The common electrode has a first cutout and a second cutout. The first cutout is disposed over the first subpixel electrode and the second cutout is disposed over the second subpixel electrode. At least a portion of the first cutout has a first width and at least a portion of the second cutout has a second width different from the first width. The first width is larger than the second width in one embodiment. This structure enhances the aperture ratio and the brightness of the display device. Failures such as a residual image, stain or fingerprint may be reduced and the picture quality is improved.Type: GrantFiled: May 2, 2005Date of Patent: November 30, 2010Assignee: Samsung Electronics Co., Ltd.Inventor: Jang-Kun Song
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Patent number: 7825403Abstract: A circuit board includes: a substrate; source and drain electrodes formed on the substrate; an organic semiconductor layer formed on the source and drain electrodes; a gate insulating layer formed on the organic semiconductor layer; and a gate electrode formed on the gate insulating layer, wherein: the substrate includes a first part, a second part, and a third part interposed between the first and second parts and a thickness of the first part or a thickness of the second part is greater than that of the third part; the source electrode is formed on the first part; the drain electrode is formed on the second part; a part of the organic semiconductor layer is formed on the third part; and a thickness of the gate insulating layer disposed on the first and second parts is smaller than that of the gate insulating layer disposed on the third part.Type: GrantFiled: March 19, 2007Date of Patent: November 2, 2010Assignee: Seiko Epson CorporationInventor: Takashi Aoki
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Patent number: 7791201Abstract: A device including a layered heterostructure with an oxygen-containing material, with a carbon layer and an amorphous oxygen diffusion barrier protecting the carbon layer from etching by oxygen. One or more of a metal, a carbide or an oxide may be in contact with the amorphous oxygen diffusion barrier that has the lowest free energy of oxide formation in the device. Various devices are disclosed as are varieties of carbon allotropes. Methods of protecting carbon, such as diamond from the oxygen etching in processes such as device manufacture are also disclosed.Type: GrantFiled: November 30, 2006Date of Patent: September 7, 2010Assignee: UChicago Argonne, LLCInventors: Orlando Auciello, John Carlisle, Jennifer Gerbi, James Birrell
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Patent number: 7767999Abstract: An electronic device containing a polythiophene wherein R represents a side chain, m represents the number of R substituents; A is a divalent linkage; x, y and z represent, respectively, the number of Rm substituted thienylenes, unsubstituted thienylenes, and divalent linkages A, respectively, in the monomer segment subject to z being 0 or 1, and n represents the number of repeating monomer segments in the polymer or the degree of polymerization.Type: GrantFiled: November 17, 2006Date of Patent: August 3, 2010Assignee: Xerox CorporationInventors: Beng S. Ong, Ping Liu, Lu Jiang, Yu Qi, Yiliang Wu
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Patent number: 7723735Abstract: In a display device having a plurality of organic electroluminescence devices arranged on a substrate, each of the devices including a lower electrode, an organic layer at least containing a light emitting layer, and an upper electrode in this order, the light emitting layer of at least some of the organic electroluminescence devices has a first light emitting layer formed by vapor deposition and a second light emitting layer formed by thermal transfer, and the first light emitting layer emits light whose wavelength is equal to or shorter than that of blue light.Type: GrantFiled: April 17, 2006Date of Patent: May 25, 2010Assignee: Sony CorporationInventor: Eisuke Matsuda
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Patent number: 7714328Abstract: The present invention provides an electro-optical device capable of achieving an increased light emission efficiency and an enhanced visibility. An organic electroluminescents (EL) display device has a plurality of material layers including a luminescent layer. In a plurality of material layers layered in the direction of light emission from the luminescent layer, first and second insulating interlayers are disposed between a substrate, which is positioned at the outermost surface, and the luminescent layer. The first and second insulating interlayers have a refractive index lower than that of the substrate. Accordingly, by forming predetermined materials having a low refractive index, the resulting low refractive index layers have a low dielectric constant, and consequently, the capacity between wires can be reduced.Type: GrantFiled: March 28, 2007Date of Patent: May 11, 2010Assignee: Seiko Epson CorporationInventor: Takashi Miyazawa
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Patent number: 7655577Abstract: A method for forming a silicon-containing insulation film on a substrate by plasma polymerization includes: introducing a reaction gas comprising (i) a source gas comprising a silicon-containing hydrocarbon cyclic compound containing at least one vinyl group (Si-vinyl compound), and (ii) an additive gas, into a reaction chamber where a substrate is placed; and applying radio-frequency power to the gas to cause plasma polymerization, thereby depositing an insulation film on the substrate.Type: GrantFiled: October 19, 2006Date of Patent: February 2, 2010Assignee: ASM Japan K.K.Inventors: Yasuyoshi Hyodo, Nobuo Matsuki, Masashi Yamaguchi, Atsuki Fukazawa, Naoki Ohara, Yijun Liu
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Patent number: 7642547Abstract: A light emitting device and a method of manufacturing the same are provided.Type: GrantFiled: December 14, 2006Date of Patent: January 5, 2010Assignee: LG. Display Co., Ltd.Inventor: Seong Moh Seo
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Patent number: 7592250Abstract: A multilayer wiring board exhibiting excellent moldability and having a capacitor where variation of capacitance is suppressed, its producing method, a semiconductor device mounting a semiconductor chip on the multilayer wiring board, and a wireless electronic device mounting the semiconductor device.Type: GrantFiled: January 16, 2007Date of Patent: September 22, 2009Assignee: Hitachi Chemical Company, Ltd.Inventors: Yasushi Shimada, Yoshitaka Hirata, Hiroyuki Kuriya, Kazuhisa Otsuka, Masanori Yamaguchi, Yuichi Shimayama, Ken Madarame, Etsuo Mizushima, Yuusuke Kondou, Kazunori Yamamoto
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Publication number: 20090128022Abstract: An organic light emitting device having a photonic crystal structure and a manufacturing method thereof are provided. The organic light emitting device comprises: a substrate through which light passes; a photonic crystal layer formed on the substrate and having a photonic crystal structure; an intermediate layer formed on the photonic crystal layer and having a large refractive index compared with the photonic crystal layer; a first electrode layer formed on the intermediate layer; a light emitting layer formed on the first electrode layer and emitting light according to current flow; and a second electrode layer formed on the light emitting layer.Type: ApplicationFiled: November 19, 2008Publication date: May 21, 2009Applicant: KOREA INSTITUTE OF MACHINERY & MATERIALSInventors: Jong-Youp SHIM, Jun-Ho Jeong, Ki-Don Kim, Dae-Geun Choi, Jun-Hyuk Choi, Eung-Sug Lee, So-Hee Jeon, Jae-R Youn, Jang-Joo Kim
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Patent number: 7476893Abstract: A vertical organic field effect transistor that includes an active cell and a capacitor that share a common source electrode. The active cell includes a semiconductor layer that is sandwiched between a drain electrode and the common source electrode. The capacitor includes a dielectric layer that is sandwiched between a gate electrode and the common source electrode. The common source electrode allows control of electrical current between the source and drain electrodes by controlling the electrical potential that is applied to the gate electrode.Type: GrantFiled: August 24, 2004Date of Patent: January 13, 2009Assignee: The Regents of the University of CaliforniaInventors: Yang Yang, Liping Ma
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Patent number: 7473923Abstract: By introducing new concepts into a structure of a conventional organic semiconductor element and without using a conventional ultra thin film, an organic semiconductor element is provided which is more reliable and has higher yield. Further, efficiency is improved particularly in a photoelectronic device using an organic semiconductor. Between an anode and a cathode, there is provided an organic structure including alternately laminated organic thin film layer (functional organic thin film layer) realizing various functions by making an SCLC flow, and a conductive thin film layer (ohmic conductive thin film layer) imbued with a dark conductivity by doping it with an acceptor and a donor, or by the like method.Type: GrantFiled: November 14, 2005Date of Patent: January 6, 2009Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Tetsuo Tsutsui, Hiroko Yamazaki, Satoshi Seo
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Patent number: 7456490Abstract: A method and structure for sealing porous dielectrics using silane coupling reagents is herein described. A sealant chain (silane coupling reagent) is formed from at least silicon, carbon, oxygen, and hydrogen and exposed to a porous dielectric material, wherein the sealant chain reacts with a second chain, that has at least oxygen and is present in the porous dielectric defining the pores, to form a continuous layer over the surface of the porous dielectric.Type: GrantFiled: September 5, 2006Date of Patent: November 25, 2008Assignee: Intel CorporationInventors: Grant Kloster, Chih-I Wu, Xiaorong Morrow
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Publication number: 20080278140Abstract: A four terminal field effect device comprises a silicon field effect device with a silicon N-type semiconductor channel and an N+ source and drain region. An insulator is deposited over the N-type semiconductor channel. An organic semiconductor material is deposited over the insulator gate forming a organic semiconductor channel and is exposed to the ambient environment. Drain and source electrodes are deposited and electrically couple to respective ends of the organic semiconductor channel. The two independent source electrodes and the two independent drain electrodes form the four terminals of the new field effect device. The organic semiconductor channel may be charged and discharged electrically and have its charge modified in response to chemicals in the ambient environment. The conductivity of silicon semiconductor channel is modulated by induced charges in the common gate in response to charges in the organic semiconductor channel.Type: ApplicationFiled: June 5, 2008Publication date: November 13, 2008Applicant: Board of Regents, The University of Texas SystemInventors: Ananth Dodabalapur, Deepak Sharma, Daniel Fine