Fullerene (e.g., C60, C70, Etc.) Derivative And Related Process Patents (Class 423/DIG39)
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Patent number: 6002035Abstract: The present invention relates to a novel fullerene-containing metallocene. Such a fullerene-containing metallocene can be used as the catalyst for preparing olefin polymers.Type: GrantFiled: May 4, 1998Date of Patent: December 14, 1999Assignee: Chinese Petroleum CorporationInventors: Long Y. Chiang, Taizoon A. Canteenwala
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Patent number: 5951832Abstract: After an ultrafine particle is disposed on a giant fullerene by driving the ultrafine particle using an electron beam, the ultrafine particle is enclosed in a core hollow portion of the giant fullerene, by contracting the giant fullerene with the electron beam irradiation. Or a metal ultrafine particle composed of an active metal is enclosed in the core hollow portion of the giant fullerene, by irradiating a high energy beam such as the electron beam to an amorphous carbon including the active metal to form the giant fullerene in an irradiated portion, and by contracting the giant fullerene with the irradiation of the high energy beam.Type: GrantFiled: October 6, 1998Date of Patent: September 14, 1999Assignee: Kabushiki Kaisha ToshibaInventors: Shun-ichiro Tanaka, Bing She Xu
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Patent number: 5919429Abstract: After an ultrafine particle is disposed on a giant fullerene by driving the ultrafine particle 1 using an electron beam, the ultrafine particle is enclosed in a core hollow portion of the giant fullerene, by contracting the giant fullerene with the electron beam irradiation. Or a metal ultrafine particle composed of an active metal is enclosed in the core hollow portion of the giant fullerene, by irradiating a high energy beam such as the electron beam to an amorphous carbon under existing of the active metal to form the giant fullerene in an irradiated portion, and by contracting the giant fullerene with the irradiation of the high energy beam such as the electron beam.Type: GrantFiled: October 2, 1997Date of Patent: July 6, 1999Assignees: Research Development Corporation of Japan, Shun-ichiro TanakaInventors: Shun-ichiro Tanaka, Bing She Xu
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Patent number: 5711927Abstract: This invention relates to a method of purifying afullerenes by recrystallization of a fullerene-complexing agent complex and to a fullerene-complexing agent complex.Type: GrantFiled: March 27, 1995Date of Patent: January 27, 1998Inventors: Jerry L. Atwood, Colin L. Raston
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Patent number: 5698497Abstract: Carbonaceous materials based on the fullerene molecules have been developed which allow for superconductivity. The fullerene materials are soluble in common solvents.Type: GrantFiled: June 13, 1994Date of Patent: December 16, 1997Assignee: Lucent Technologies Inc.Inventors: Robert Cort Haddon, Arthur Foster Hebard, Donald Winslow Murphy, Matthew Jonathan Rosseinsky
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Patent number: 5662876Abstract: A low-cost and facile method of purifying fullerenes to obtain a preparation enriched in a fullerene of selected molecular weight using activated carbon involves adding a fullarena mixture to the top end of a column comprising activated carbon, passing a solvent in which the selected molecular weight fullerene is soluble through the column, and recovering a fraction enriched in the selected molecular weight fullerene from the bottom end of the column. In addition to activated carbon, the column may further comprise silica gel, diatomaceous earth, or other materials which aid in column packing and eluent flow. The invention also provides for preparation of gram quantities of pure C.sub.60 and C.sub.70 fullerenes after a single column pass.Type: GrantFiled: May 5, 1994Date of Patent: September 2, 1997Assignee: University of South CarolinaInventors: James M. Tour, Walter A. Scrivens, Peter V. Bedworth
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Patent number: 5561102Abstract: A superconductive fullerene and a process for making such superconductive fullerene are provided. The process involves contacting a quantity of fullerene with the vapor of an interhalogen compound such as ICl. The halogen doped fullerenes exhibited a transition temperature above 60 K.Type: GrantFiled: December 14, 1994Date of Patent: October 1, 1996Assignee: The Research Foundation of State University of New York at BuffaloInventors: Yi-Han Kao, Liwei Song, Deborah D. L. Chung, Kevin T. Fredette
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Patent number: 5558903Abstract: The invention relates to an improved synthesis of fullerene (C.sub.60) films, whereby improved purity and adhesion to a substrate are achieved. The invention is not limited to C.sub.60 molecules and other fullerenes and fullerene based materials, including for example, metallofullerenes, fluorinated fullerenes, and codeposition of fullerene and other solid lubricants. The invention also relates to the use of these fullerene materials in oils, greases, polymers and other materials, both organic and inorganic, for improving lubrication and wear life. The invention further relates to a process for the ion bombardment of fullerene materials, including but not limited to, C.sub.60 fullerene materials to improve their tribological properties.Type: GrantFiled: October 20, 1994Date of Patent: September 24, 1996Assignee: The Ohio State UniversityInventors: Bharat Bhushan, James V. Coe, Jr., Balkishan Gupta
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Patent number: 5543378Abstract: This invention relates to a composition, comprising a carbon nanostructure having a palladium crystallite encapsulated therein; and more particularly, to worm-like carbon nanostructures attached to a carbon cluster, the worm-like nanostructures being comprised of a plurality of connecting sections of carbon tubes terminating in an end portion which encapsulates a palladium crystallite within its internal cavity.Type: GrantFiled: February 24, 1995Date of Patent: August 6, 1996Assignee: E. I. Du Pont de Nemours and CompanyInventor: Ying Wang
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Patent number: 5538763Abstract: A carbon cluster film has a precisely controlled stable electrical conductivity which does not deteriorate in a short period of time in air. Such a carbon cluster film having a stable electrical conductivity is formed by introducing an impurity into a thin film of fullerenes by ion implantation. The fullerenes include C.sub.60, C.sub.70 or the like.Type: GrantFiled: December 2, 1994Date of Patent: July 23, 1996Assignee: Sumitomo Electric Industries, Ltd.Inventors: Yoshinobu Ueba, Nobuyuki Okuda, Kengo Ohkura, Hirokazu Kugai
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Patent number: 5457343Abstract: The invention provides a nanometer sized carbon tubule enclosing a foreign material except for carbon. The carbon tubule comprises a plurality of tubular graphite monoatomic sheets coaxially arranged. The foreign material is introduced through a top portion of the carbon tubule. The introduction of the foreign material is accomplished after forming an opening at the top portion of the carbon tubule either by contacting the foreign material with the top portion of the carbon tubule together with a heat treatment or by an evaporation of the foreign material on the top portion of the carbon tubule together with the heat treatment. The foreign material is introduced only in a center hollow space defined by an internal surface of the most inner tubular graphite monoatomic sheet.Type: GrantFiled: December 21, 1993Date of Patent: October 10, 1995Assignee: NEC CorporationInventors: Pulickel M. Ajayan, Sumio Iijima
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Patent number: 5395589Abstract: Apparatus for preconcentrating trace amounts of organic vapors in a sample of air for subsequent detection, comprising a metallic substrate; a thin film of fullerenes deposited on the metallic substrate for adsorbing the organic vapors on the thin film of fullerenes, thereby preconcentrating the organic vapors; and apparatus for heating the metallic substrate to a predetermined optimum temperature for desorbing the vapors from the thin film of fullerenes to form desorbed organic vapors for subsequent detection.Type: GrantFiled: April 7, 1994Date of Patent: March 7, 1995Assignee: Scintrex LimitedInventor: Sabatino Nacson
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Patent number: 5391323Abstract: Carbonaceous materials based on the fullerene molecules have been developed which allow for high conductivity (comparable to or higher than those attained by n-type doped polyacetylene). The fullerene materials are soluble in common solvents.Type: GrantFiled: November 22, 1993Date of Patent: February 21, 1995Assignee: AT&T Corp.Inventors: Robert C. Haddon, Arthur F. Hebard, Donald W. Murphy, Matthew J. Rosseinsky
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Patent number: 5380595Abstract: A carbon cluster film has a precisely controlled stable electrical conductivity which does not deteriorate in a short period of time in air. Such a carbon cluster film having a stable electrical conductivity is formed by introducing an impurity into a thin film of fullerenes by ion implantation. The fullerenes include C.sub.60, C.sub.70 or the like.Type: GrantFiled: October 20, 1992Date of Patent: January 10, 1995Assignee: Sumitomo Electric Industries, Ltd.Inventors: Yoshinobu Ueba, Nobuyuki Okuda, Kengo Ohkura, Hirokazu Kugai
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Patent number: 5380703Abstract: A superconductive fullerene and a process for making such superconductive fullerene are provided. The process involves contacting-a quantity of fullerene with the vapor of an interhalogen compound such as ICl. The halogen doped fullerenes exhibited a transition temperature above 60 K.Type: GrantFiled: January 25, 1993Date of Patent: January 10, 1995Assignee: The Research Foundation of State University of New York at BuffaloInventors: Yi-Han Kao, Liwei Song, Deborah D. L. Chung, Kevin T. Fredette
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Patent number: 5372798Abstract: The invention relates to a composition that is the reaction of a fullerene containing at least one corrannulene ring structure and Y.sub.2 X.sub.2, wherein Y is Se or S, and X is Cl or Br. Generally, these compounds may be represented by the formula C.sup.f.sub.n X.sub.6 Y.sub.2 or more particularly C.sup.f.sub.n X.sub.5 (YYX). In the formula C.sup.f.sub.n more specifically, is a fullerene having at least one corrannulene ring structure. The compositions may be made by reacting fullerenes with Se.sub.2 X.sub.2 or S.sub.2 X.sub.2 wherein X is Cl or Br, preferably in liquid form and preferably heated for a time sufficient to produce the novel compositions. The compositions may be isolated in crystalline form by precipitation with a solvent such as hexane. In crystalline form the compositions may be represented by the generic formula C.sup.f.sub.n X.sub.8 Y.sub.4, or more particularly, C.sup.f.sub.n X.sub.5 (YYX).mY.sub.2 X.sub.2 because in crystalline form the compositions are typically associated with .mY.sub.Type: GrantFiled: March 8, 1994Date of Patent: December 13, 1994Assignee: Exxon Research and Engineering CompanyInventors: Jonathan M. McConnachie, Edward I. Stiefel
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Patent number: 5370855Abstract: A method of forming synthetic hydrogen defect free diamond or diamond like films on a substrate. The method involves providing vapor containing fullerene molecules with or without an inert gas, providing a device to impart energy to the fullerene molecules, fragmenting at least in part some of the fullerene molecules in the vapor or energizing the molecules to incipient fragmentation, ionizing the fullerene molecules, impinging ionized fullerene molecules on the substrate to assist in causing fullerene fragmentation to obtain a thickness of diamond on the substrate.Type: GrantFiled: March 23, 1993Date of Patent: December 6, 1994Inventor: Dieter M. Gruen
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Patent number: 5346683Abstract: Uncapped and thinned carbon nanotubes are produced by reaction with a flowing reactant gas capable of reaction selectively with carbon atoms in the capped region of nanotubes. The uncapped and thinned nanotubes provide open compartments for insertion of chemicals and exhibit enhanced surface area with modified physical and chemical properties.Type: GrantFiled: March 26, 1993Date of Patent: September 13, 1994Assignee: Gas Research InstituteInventors: Malcolm L. H. Green, Shik C. Tsang
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Patent number: 5338529Abstract: Carbon clusters, such as C.sub.60 and C.sub.70 fullerenes are separated by means of a recognition selector having the formula: ##STR1## wherein R.sub.1 is ##STR2## wherein R.sub.2 is O, S or NR.sub.12 wherein R.sub.12 is independently hydrogen or P.dbd.O with the proviso that when R.sub.12 is P.dbd.O, then only one such group is present and all R.sub.2 's are additionally bonded to R.sub.12,R.sub.4 is independently O, S or NH,R.sub.3 and R.sub.5 are each independently hydrogen or lower alkyl,n and o are each independently zero, 1, 2 or 3,p, q, r, s and t are each independently zero or 1,Ar is a monocyclic or ortho-fused polycyclic aromatic moiety having up to 10 carbon atoms, either of which may be unsubstituted or substituted with one or more lower alkyl, NO.sub.2, N(R.sub.6).sub.3.sup.+, CN, COOR.sub.7, SO.sub.3 H, COR.sub.8 and OR.sub.9 wherein R.sub.6, R.sub.7, R.sub.8 and R.sub.9 are each independently hydrogen or lower alkyl;W is H or CH.dbd.CH.sub.2 ; andm is 1 to 10.Type: GrantFiled: April 27, 1992Date of Patent: August 16, 1994Assignee: Research Corporation Technologies, Inc.Inventors: William H. Pirkle, Christopher J. Welch
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Patent number: 5324495Abstract: The present invention relates to a new process for making metal fulleride compositions having the formula A.sub.n (C.sub.x).sub.m, wherein A is a metal cation and C.sub.x is a fullerene anion, preferably C.sub.x is C.sub.60 or C.sub.70, wherein n is a number equal to the absolute value of the valence of the fullerene anion, wherein m is equal to the absolute value of the valence of A, wherein the values of n and m are divided by their greatest common factor, if any, and wherein the metal fulleride composition is neutral in charge. This process comprises reacting a metal with a fullerene in a solvent or mixture of solvents in which the fullerene is at least partly soluble at a temperature from greater than the freezing point to equal to or less than the boiling point of the solvent, for a time sufficient to form the metal fulleride composition.Type: GrantFiled: October 8, 1993Date of Patent: June 28, 1994Assignee: Exxon Research and Engineering CompanyInventor: Sergiu M. Gorun
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Patent number: 5310532Abstract: A low-cost and facile method of purifying fullerenes to obtain a preparation enriched in a fullerene of selected molecular weight using activated carbon involves adding a fullerene mixture to the top end of a column comprising activated carbon, passing a solvent in which the selected molecular weight fullerene is soluble through the column, and recovering a fraction enriched in the selected molecular weight fullerene from the bottom end of the column. In addition to activated carbon, the column may further comprise silica gel, diatomaceous earth, or other materials which aid in column packing and eluent flow.Type: GrantFiled: June 10, 1992Date of Patent: May 10, 1994Assignee: University of South CarolinaInventors: James M. Tour, Walter A. Scrivens, Peter V. Bedworth
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Patent number: 5294600Abstract: A superconducting material higher in superconducting transition temperature and superconducting volume ratio than any conventional one is provided, which comprises a fullerene doped with rubidium and cesium. This fullerene system superconducting material makes it possible to improve both the superconducting transition temperature and superconducting volume ratio by having rubidium and cesium doped thereinto compared with any conventional fullerene systems. If the chemical composition of this super conducting material is expressed as Rb.sub.x Cs.sub.y C.sub.n, x and y are arbitrary if an equation x+y=3 is satisfied, preferable to be x=2 and y=1, further preferable to be x=1 and y=s. The superconducting transition temperature Tc and superconducting volume ratio when x=1 and y=2 or x=2 and y=1 are superior to those when x=3 and y=0 or x=0 and y=3, respectively.Type: GrantFiled: July 2, 1992Date of Patent: March 15, 1994Assignee: NEC CorporationInventors: Katsumi Tanigaki, Thomas Ebbesen, Sadanori Kuroshima, Junichiro Mizuki