Abstract: An optical sensing method capable of changing a sensing direction of an optical sensing module is applied to a portable device, which includes a housing, an optical sensing module and an optical diverting mechanism. The optical sensing module is disposed inside the housing. The optical sensing module includes an optical emitter adapted to emit an optical sensing signal out of the housing and an optical receiver adapted to receive an optical modulated signal reflected from an external object. The optical diverting mechanism is adjacent by the optical sensing module. The optical sensing signal is directly projected while the optical sensing signal is not diverted by the optical diverting mechanism, and the optical sensing signal is transmitted to a second direction different from the first direction while the optical sensing signal is diverted by the optical diverting mechanism.

Abstract: An electronic device for sensing air quality is provided. The electronic device includes a proximity sensor, a processor and a memory. The proximity sensor at least includes a light source and a light sensor. The light source emits light toward particulate matter in air, wherein the light is reflected by a surface of the particulate matter to form reflected light. The light sensor senses the reflected light. The processor is coupled to the proximity sensor, and the memory is operatively coupled to the processor. The processor is configured to execute program code stored in the memory by: obtaining an air quality value corresponding to an intensity value of the reflected light according to an air quality table.

Abstract: A photoelectric conversion assembly is proposed. The photoelectric conversion assembly comprises a photoelectric conversion module having an interposer, at least one optical element and an optical bench. The at least one optical element is configured on the interposer, and the optical bench is used to support for the interposer. A circuit board is used to support for the photoelectric conversion module, having metal pads for coupling the at least one optical element. An optical transmission component is used for transmitting light. An optical ferrule is used for engaging with the photoelectric conversion module and an optical transmission component. A plug is used for electrically connecting the circuit board.

Abstract: A solid-state imaging apparatus has: a signal readout circuit including a charge storage region connected to a photoelectric conversion region, and a reset transistor connected at one of source and drain to the charge storage region; and a negative feedback circuit that feeds back an output of the signal readout circuit in a negative feedback manner to the other of the source and drain of the reset transistor. A reset operation for discharging a charge stored in the charge storage region includes a first period in which the negative feedback circuit is OFF and a second period which occurs after the first period and in which the negative feedback circuit is ON. In the first period, the reset transistor changes from OFF to ON and then to OFF. In the second period, such a reset transistor control voltage is applied that makes the reset transistor to gradually change to ON.

Abstract: A photocathode is formed on a monocrystalline silicon substrate having opposing illuminated (top) and output (bottom) surfaces. To prevent oxidation of the silicon, a thin (e.g., 1-5 nm) boron layer is disposed directly on the output surface using a process that minimizes oxidation and defects. An optional second boron layer is formed on the illuminated (top) surface, and an optional anti-reflective material layer is formed on the second boron layer to enhance entry of photons into the silicon substrate. An optional external potential is generated between the opposing illuminated (top) and output (bottom) surfaces. The photocathode forms part of novel electron-bombarded charge-coupled device (EBCCD) sensors and inspection systems.

Abstract: The present disclosure provides a near-infrared absorbing filter, including an absorbing type infrared filtering medium having opposite first and second surfaces; an organic coating layer formed on the first surface of the absorbing type filtering medium for absorbing infrared rays; a first multi-layered film structure formed on the organic coating layer with the organic coating layer disposed between the first multi-layered film structure and the absorbing type infrared filtering medium; and a second multi-layered film structure formed on the second surface of the absorbing type infrared filtering medium. The near-infrared filter of the present disclosure is able to reduce the wavelength difference of T50 and T20 of the incident light within the range of from 0 to 30 degrees to less than 5 nm, thereby reducing chromatic aberration effectively and reducing ghost images of infrared reflections. The disclosure further provides an image sensor including the near-infrared absorbing filter.

Abstract: An optical element, which is composed of at least three optical members including a resin layer sandwiched between two optical members, has a high environmental resistance and optical performance, and has an excellent chromatic aberration correction effect. In the optical element, the resin layer is formed on one of light incident/exit surfaces of a first optical member, and a second optical member is cemented to the resin layer by a bonding material. A condition of ?g<?r is satisfied, where ?r indicates an outer diameter of the resin layer and ?g indicates a diameter of cemented surface of the resin layer and the second optical member.

Abstract: An image sensor comprises an array of pixels comprising: a pinned photodiode; a first sense node A; a second sense node B; a transfer gate TX connected between the pinned photodiode and the first sense node A; a first reset transistor M3 connected between a voltage reference line Vrst and the second sense node B; a second reset transistor M4 connected between the first sense node A and the second sense node B; and a buffer amplifier M1 having an input connected to the first sense node A. The control logic is arranged to operate the pixels in a low conversion gain mode and in a high conversion gain mode. In each of the conversion gain modes the control logic is arranged to operate one of a first reset control line RS1 and a second reset control line RS2 to continuously switch on one of the first reset transistor M3 and the second reset transistor M4 during a readout period of an operational cycle of the pixels.

Abstract: An input circuit for an I/O module for an industrial controller or the like provides a shunt regulator for precisely controlling the maximum current through the LED of an optical isolator. Substantial improvement in the current regulation decreases power dissipation in the optical isolator element. A low voltage shunt circuit prevents leakage from the shunt regulator from activating the optical isolator at low voltages allowing more sensitive optical isolators providing additional power dissipation savings.

Abstract: A solid-state imaging apparatus has: a signal readout circuit including a charge storage region connected to a photoelectric conversion region, and a reset transistor connected at one of source and drain to the charge storage region; and a negative feedback circuit that feeds back an output of the signal readout circuit in a negative feedback manner to the other of the source and drain of the reset transistor. A reset operation for discharging a charge stored in the charge storage region includes a first period in which the negative feedback circuit is OFF and a second period which occurs after the first period and in which the negative feedback circuit is ON. In the first period, the reset transistor changes from OFF to ON and then to OFF. In the second period, such a reset transistor control voltage is applied that makes the reset transistor to gradually change to ON.

Abstract: A pattern formed on a substrate includes first and second sub-patterns positioned adjacent one another and having respective first and second periodicities. The pattern is observed to obtain a combined signal which includes a beat component having a third periodicity at a frequency lower than that of the first and second periodicities. A measurement of performance of the lithographic process is determined by reference to a phase of the beat component. Depending how the sub-patterns are formed, the performance parameter might be critical dimension (CD) or overlay, for example. For CD measurement, one of the sub-patterns may comprise marks each having of a portion sub-divided by product-like features. The measurement can be made using an existing alignment sensor of a lithographic apparatus. Sensitivity and accuracy of the measurement can be adjusted by selection of the first and second periodicities, and hence the third periodicity.

Abstract: An optical encoder having diffuser members, and methods for detecting the rotational movement of the cylinder of the optical encoder are disclosed. The optical encoder may include a rotatable cylinder configured to reflect light. The rotatable cylinder may include an encoding pattern of alternating reflective stripes having distinct light-reflective properties. The optical encoder may also include a light source positioned adjacent the rotatable cylinder, and an array of optical sensors positioned adjacent the rotatable cylinder. The array of optical sensors may receive the reflected light from the rotatable cylinder. The optical encoder may include a diffuser member positioned on the rotatable cylinder, the light source, and the array of optical sensors.

Abstract: The invention relates to a receptacle for storage of an object, containing a proximity sensor capable of detecting an action by a user close to or in contact with a surface of the receptacle, a transducer and a control circuit comprising an input coupled to the proximity sensor and an output connected to the transducer, the control circuit being configured to generate a control signal to be sent to the transducer when a user action is detected by the proximity sensor, characterized in that it also comprises an unpacking detector coupled to the control circuit and in that the control circuit is also configured to changeover from a standby mode during which it periodically awakens to query the unpacking detector, to a detection mode during which it periodically checks the state of its input coupled to the proximity sensor, after the unpacking detector has detected removal of the receptacle from a packaging.

Abstract: A solid-state imaging apparatus comprises a pixel array, a first column output line provided for each column of the pixel array, a first constant current source, a scanning unit configured to select the pixel portions for each row, and a current control unit configured to control current values, wherein the scanning unit can switch between a normal readout mode and a mixing readout mode, and in the mixing readout mode, the current control unit controls the current values of the first column output lines so that the current value of the first column output line to which the signals of at least one color are simultaneously output is smaller than the current value of the first column output line to which the signals of another color are simultaneously output.

Abstract: A CMOS photodiode device for use in a dual-sensitivity imaging pixel contains at least two areas of differential doping. Transistors are provided in electrical contact with these areas to govern operation of signals emanating from the photodiode on two channels, each associated with a different sensitivity to light. A plurality of such photodiodes may be incorporate into a shared arrangement forming a single pixel, in order to enhance the signals.

Abstract: Systems and methods implementing a resonance circuit, including an avalanche photodiode, in which a resonance frequency of the resonance circuit is matched with the frequency of a dynamic biasing signal of the avalanche photodiode, can be used in a variety of applications. In various embodiments, a method for blocking and/or compensating current injection associated with the parasitic capacitance of APDs operated under dynamic biasing may be substantially realized by the matching of the resonance frequency of a resonance circuit including the avalanche photodiode with the frequency of an applied dynamic biasing signal. Additional systems and methods are described that can be used in a variety of applications.

Abstract: In a method embodiment, a method includes generating one or more first signals proportional to the position and intensity of photons within a first range of wavelengths and incident on a position sensing pixel of an array of position sensing pixels. The method further includes generating one or more second signals proportional to a number of photons within a second range of wavelengths and incident on an image sensing pixel of an array of image sensing pixels. The array of image sensing pixels is formed monolithically on the array of position sensing pixels.

Abstract: An encoder for outputting a measurement value of a position or angle of a scale in accordance with a command signal transmitted with a cycle, includes: a detector configured to perform detection of a signal from the scale and output a detection signal; and a processor configured to perform generation of data representing a position or angle of the scale based on the detection signal, perform correction of the data based on a change amount of the position or angle along with movement of the scale in a delay time till receiving of a subsequent command signal after the detection, and perform outputting of the corrected data. The processor is configured to perform processing including the generation and correction in accordance with receiving of the command signal, and perform a plurality of the processing in parallel.

Abstract: Provided is an imaging apparatus, including: a photoelectric conversion element; an amplifier transistor configured to output a voltage corresponding to electric charges generated by the photoelectric conversion element; a load transistor configured to supply a bias current to the amplifier transistor; and a voltage supply unit configured to input one of a first voltage and a second voltage, which have different voltage values, to a control node of the load transistor via an input capacitor. In the imaging apparatus, a current value of the bias current to be supplied by the load transistor at a time when the second voltage is input to the control node via the input capacitor is larger than a current value of the bias current to be supplied by the load transistor at a time when the first voltage is input to the control node via the input capacitor.

Abstract: A spectrum-inspection device includes a multi-band pass filter, a filter array, and a sensing layer. The multi-band pass filter allows a first waveband, a second waveband, and a third waveband of a light beam to pass through. The light beam passes through the multi-band pass filter forms a multi-band beam. The filter array is disposed under the multi-band pass filter. The filter array includes a first filter allowing wavelengths of the multi-band beam longer than a first wavelength to pass through, a second filter allowing wavelengths of the multi-band beam longer than a second wavelength to pass through, and a third filter allowing wavelengths of the multi-band beam longer than a third wavelength to pass through. The second waveband is between the first wavelength and the second wavelength, and the third waveband is between the second wavelength and the third wavelength.