Abstract: Methods for processing an amorphous silicon thin film sample into a polycrystalline silicon thin film are disclosed.

Abstract: Microphone arrays (MAs) are described that position and vent microphones so that performance of a noise suppression system coupled to the microphone array is enhanced. The MA includes at least two physical microphones to receive acoustic signals. The physical microphones make use of a common rear vent (actual or virtual) that samples a common pressure source. The MA includes a physical directional microphone configuration and a virtual directional microphone configuration. By making the input to the rear vents of the microphones (actual or virtual) as similar as possible, the real-world filter to be modeled becomes much simpler to model using an adaptive filter.

Abstract: A semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region is attached to a compound substrate including a host which provides mechanical support to the device and a ceramic layer including a luminescent material. In some embodiments the compound substrate includes a crystalline seed layer on which the semiconductor structure is grown. The ceramic layer is disposed between the seed layer and the host. In some embodiments, the compound substrate is attached to the semiconductor structure after growth of the structure on a conventional growth substrate. In some embodiments, the compound substrate is spaced apart from the semiconductor structure and does not provide mechanical support to the structure. In some embodiments, the ceramic layer has a thickness less than 500 ?m.

Abstract: A heater rolling pin having a roller body, stainless steel axles, hollow roller interior, roller outer surface, a handle mounted to each axle, electrical tactile switch secured to one end of the roller, a heater secured inside the roller interior, batteries and a battery holder at the opposite end of the roller. The internal heater makes the outer surface of the roller hot. The roller is manufactured from food grade aluminum alloy and is hard anodized and dyed to make the surface very hard and scratch resistant. The roller has two food quality, high density polyethylene (HDPE) plastic handles with stainless steel axles.

Abstract: A semiconductor device can include a source region near a working top surface of a semiconductor region. The device can also include a gate located above the working top surface and located laterally between the source and a drain region. The source region and the gate can at least partially laterally overlap a body region near the working top surface. The source region can include a first portion having the first conductivity type, a second portion having a second conductivity type, and a third portion having the second conductivity type. The second portion can be located laterally between the first and third portions and can penetrate into the semiconductor region to a greater depth than the third portion but no more than the first portion. The lateral location of the third portion can be determined at least in part using the lateral location of the gate.

Abstract: Embodiments of the present invention are directed to a heterocyclic compound and an organic light-emitting device including the heterocyclic compound. The organic light-emitting devices using the heterocyclic compounds have high-efficiency, low driving voltage, high luminance and long lifespan.

Abstract: An organic electroluminescent device includes: a pair of electrodes including a positive electrode and a negative electrode, at least one of the electrodes being transparent or semi-transparent; and an organic compound layer including one or more layers interposed between the pair of electrodes, at least one layer included in the organic compound layer containing one or more compounds represented by the following formula (I): in formula (I), R1s each independently representing a linear alkyl, linear alkoxy, branched alkyl, or branched alkoxy group having from 3 to 20 carbon atoms; and R2s each independently representing a hydrogen atom, a linear alkyl group having from 1 to 20 carbon atoms, a linear alkoxy group having from 1 to 20 carbon atoms, a branched alkyl group having from 3 to 20 carbon atoms, or a branched alkoxy group having from 3 to 20 carbon atoms.

Abstract: A semiconductor device includes a semiconductor substrate having a conductive type, a source metal layer, a gate metal layer, at least one transistor device, a heavily doped region having the conductive type, a capacitor dielectric layer, a conductive layer. The source metal layer and the gate metal layer are disposed on the semiconductor substrate. The transistor device is disposed in the semiconductor substrate under the source metal layer. The heavily doped region, the capacitor dielectric layer and the conductive layer constitute a capacitor structure, disposed under the gate metal layer, and the capacitor structure is electrically connected between a source and a drain of the transistor device.

Abstract: Based on average values for respective color components calculated by an average value calculating section, a histogram generating section obtains, for respective pixels of interest, a maximum value of the average values among the color components and a maximum difference in the average values among the color components, and generates histograms respectively for the maximum value and the maximum difference in which histograms a number of pixels for a density bin is considered as a frequency-of-occurrence value. A determination section obtains a number of density bin having a predetermined frequency-of-occurrence value or more for each of the histograms for the maximum value and the maximum difference, and determines that the data of image is of a blank page image when both of the numbers of density bins are not greater than a bin threshold value which is set according to scanning modes or printing modes.

Abstract: A sound input device includes a differential microphone, configured to receive sound including noise, and generate a first signal in accordance with the sound; a detector, configured to detect the noise, and generate a second signal in accordance with the detected noise; and a controller, configured to control at least one of suppression of high-frequency components of the first signal and changing of a frequency band to be suppressed of the first signal based on the second signal.

Abstract: An apparatus for providing real-time calibration for two or more microphones. A calibrator for receiving a left microphone signal and a right microphone signal and generating phase difference data. A phase and amplitude correction system for receiving one of the left microphone signal or the right microphone signal the phase difference data and generating calibration data for a beamformer. The beamformer receiving the calibration data, the left microphone signal and the right microphone signal and generating a monaural beamformed signal.

Abstract: Amorphous semiconductor films with enhanced charged carrier transport are disclosed. Also disclosed is a method for fabricating and treating the film to produce the enhanced transport. Also disclosed are semiconductor p-n junctions fabricated with the films which demonstrate the enhanced transport. The films are amorphous and include boron, carbon, and hydrogen.

Abstract: Nanotube electronic devices exhibit selective affinity to disparate nanotube types. According to an example embodiment, a semiconductor device exhibits a treated substrate that selectively interacts (e.g., chemically) with nanotubes of a first type, relative to nanotubes of a second type, the respective types including semiconducting-type and metallic-type nanotubes. The selective interaction is used to set device configuration characteristics based upon the nanotube type. This selective-interaction approach can be used to set the type, and/or characteristics of nanotubes in the device.

Abstract: A die-bonding method is suitable for die-bonding a LED chip having a first metal thin-film layer to a substrate. The method includes forming a second metal thin film layer on a surface of the substrate; forming a die-bonding material layer on the second metal thin film layer; placing the LED chip on the die-bonding material layer with the first metal thin film layer contacting the die-bonding material layer; heating the die-bonding material layer at a liquid -solid reaction temperature for a pre-curing time, so as to form a first intermetallic layer and a second intermetallic layer; and heating the die-bonding material layer at a solid-solid reaction temperature for a curing time for performing a solid-solid reaction. The liquid-solid reaction temperature and the solid-solid reaction temperature are both lower than 110° C., and a melting point of the first and second intermetallic layers after the solid-solid reaction is higher than 200° C.

Abstract: Provided are a semiconductor light emitting device and a method of manufacturing the same. The semiconductor light emitting device comprises a first conductive type semiconductor layer, an active layer, a first thin insulating layer, and a second conductive type semiconductor layer. The active layer is formed on the first conductive type semiconductor layer. The first thin insulating layer is formed on the active layer. The second conductive type semiconductor layer is formed on the thin insulating layer.

Abstract: An organic light emitting device and a manufacturing method thereof, including a first signal line and a second signal line intersecting each other on an insulating substrate, a switching thin film transistor connected to the first signal line and the second signal line, a driving thin film transistor connected to the switching thin film transistor, and a light emitting diode (“LD”) connected to the driving thin film transistor. The driving thin film transistor includes a driving control electrode and a driving semiconductor overlapping the driving control electrode, crystallized silicon having a doped region and a non-doped region, a driving gate insulating layer disposed between the driving control electrode and the driving semiconductor, and a driving input electrode and a driving output electrode opposite to each other on the driving semiconductor, wherein the interface between the driving gate insulating layer and the driving semiconductor includes nitrogen gas.

Abstract: Disclosed are embodiments of a semiconductor structure having a contact-level air gap within the interlayer dielectrics above a semiconductor device in order to minimize parasitic capacitances (e.g., contact-to-contact capacitance, contact-to-diffusion region capacitance, gate-to-contact capacitance, gate-to-diffusion region capacitance, etc.). Specifically, the structure can comprise a semiconductor device on a substrate and at least three dielectric layers stacked above the semiconductor device. An air gap is positioned with the second dielectric layer aligned above the semiconductor device and extending vertically from the first dielectric layer to the third dielectric layer. Also disclosed are embodiments of a method of forming such a semiconductor structure using a self-assembly approach.

Abstract: Deep trench capacitor structures and methods of manufacture are disclosed. The method includes forming a deep trench structure in a wafer comprising a substrate, buried oxide layer (BOX) and silicon (SOI) film. The method further includes forming a plate on a sidewall of the deep trench structure in the substrate by an implant process. The implant processes contaminate exposed edges of the SOI film in the deep trench structure. The method further includes removing the contaminated exposed edges of the SOI film by an etching process to form a void in the SOI film. The method further includes growing epitaxial Si in the void, prior to completing a capacitor structure.

Abstract: Disclosed herein are apparatus, method, and computer program product whereby a device receives an acoustic signal. In response to the received acoustic signal, the device outputs electrical signals from a first input audio transducer and a second input audio transducer. The second input audio transducer is less sensitive than the first input audio transducer.

Abstract: This disclosure relates to the synthesis of Er doped GaN epilayers by in-situ doping by metal-organic chemical vapor deposition (MOCVD). In an embodiment, both above and below bandgap excitation results in a sharp PL emission peak at 1.54 ?m. Contrary with other growth methods, MOCVD grown Er-doped GaN epilayers exhibit virtually no visible emission lines, an present a small thermal quenching effect. The Er incorporation has very little effect on the electrical conductivity of the GaN epilayers and Er doped layers retain similar electrical properties as those of undoped GaN.