Abstract: The present disclosure relates to a diode laser and a method for producing the same. In one embodiment, the diode laser, comprises a passive pedestal layer structure, an active ridge layer structure positioned over the passive pedestal layer structure, a p-contact contacting a top side of the active ridge layer structure, a first n-contact disposed on a first side of the active ridge layer structure, a second n-contact disposed on a second side of the active ridge layer structure and, an n-final-metal layer connecting the first n-contact metal and the second n-contact metal, wherein the n-final-metal layer is continuous over the active ridge layer structure.

Abstract: The present disclosure relates to a diode laser and a method for producing the same. In one embodiment, the diode laser, comprises a passive pedestal layer structure, an active ridge layer structure positioned over the passive pedestal layer structure, a p-contact contacting a top side of the active ridge layer structure, a first n-contact disposed on a first side of the active ridge layer structure, a second n-contact disposed on a second side of the active ridge layer structure and, an n-final-metal layer connecting the first n-contact metal and the second n-contact metal, wherein the n-final-metal layer is continuous over the active ridge layer structure.

Abstract: A chip scale atomic clock is disclosed that provides a low power atomic time/frequency reference that employs direct RF-interrogation on an end-state transition.

Abstract: A chip scale atomic clock is disclosed that provides a low power atomic time/frequency reference that employs direct RF-interrogation on an end-state transition.

Abstract: A chip scale atomic clock is disclosed that provides a low power atomic time/frequency reference that employs direct RF-interrogation on an end-state transition.

Abstract: A cell suitable for use with an atomic clock and a method for making the same, the cell including: a silicon wafer having a recess formed therein; at least one amorphous silicate member having an ion mobility and temperature expansion coefficient approximately that of silicon sealing the recess; and, an alkali metal containing component and buffer gas contained in the recess. The method includes: providing a silicon wafer; forming a cavity through the silicon wafer; introducing an alkali metal containing component and buffer gas into the cavity; and, anodically bonding at least one amorphous silicate member having an ion mobility and temperature expansion coefficient approximately that of silicon to the wafer to close the cavity.

Abstract: A cell suitable for use with an atomic clock and a method for making the same, the cell including: a silicon wafer having a recess formed therein; at least one amorphous silicate member having an ion mobility and temperature expansion coefficient approximately that of silicon sealing the recess; and, an alkali metal containing component and buffer gas contained in the recess. The method includes: providing a silicon wafer; forming a cavity through the silicon wafer; introducing an alkali metal containing component and buffer gas into the cavity; and, anodically bonding at least one amorphous silicate member having an ion mobility and temperature expansion coefficient approximately that of silicon to the wafer to close the cavity.

Abstract: A chip scale atomic clock is disclosed that provides a low power atomic time/frequency reference that employs direct RF-interrogation on an end-state transition.

Abstract: A low-jitter optical pulse source including: a monolithic waveguide including a first section substantially perpendicular to a first facet and a second section being curved and substantially non-perpendicular to a second facet; and, an optical circulator coupled to the monolithic waveguide and forming a sigma cavity in combination with the monolithic waveguide, wherein the first facet forms a sole reflector for the sigma cavity.

Abstract: One embodiment of the present invention is an exemplary wavelength selective optical coupling device. This exemplary device includes two waveguides, a ring or disc resonator, and resonator coupling elements. The waveguides are disposed on top of a substrate, not in contact with each other. The waveguides may transmit multiple wavelengths of light. The ring or disc resonator includes a dielectric member which extends parallel to the top of the substrate and overlaps, without contacting, the waveguides. The resonator is sized to resonate at a subset of resonant wavelengths. The resonator coupling elements couple the resonator to the substrate. The resonator coupling elements may include a bridge coupled to the top surface of the substrate and electrically coupled to control circuitry within the substrate. A waveguide coupling signal from the control circuitry causes the bridge to deform, translating the resonator up and down, thereby intermittently coupling and decoupling the waveguides.

Abstract: One embodiment of the present invention is an exemplary wavelength selective optical coupling device. This exemplary device includes two waveguides, a ring or disc resonator, and resonator coupling means. The waveguides are disposed on top of a substrate, not in contact with each other. The waveguides may transmit multiple wavelengths of light. The ring or disc resonator includes a dielectric member which extends parallel to the top of the substrate and overlaps, without contacting, the waveguides. The resonator is sized to resonate at a subset of resonant wavelengths. The resonator coupling means couple the resonator to the substrate. The resonator coupling means may include a bridge coupled to the top surface of the substrate and electrically coupled to control circuitry within the substrate. A waveguide coupling signal from the control circuitry causes the bridge to deform, translating the resonator up and down, thereby intermittently coupling and decoupling the waveguides.