Abstract: A method for fabricating a back-illuminated imager which has a pinned back surface is disclosed. A first insulator layer is formed overlying a mechanical substrate. A conductive layer is deposited overlying the first insulator layer. A second insulator layer is formed overlying the conductive layer to form a first structure, an interface being formed between the conductive layer and the second insulator layer, the conductive layer causing band bending proximal to the interface such that the interface is electrically pinned. Hydrogen is implanted in a separate device wafer to form a bubble layer. A final insulator layer is formed overlying the device wafer to form a second structure. The first structure and the second structure are bonded to form a combined wafer. A portion of the combined wafer is removed underlying the bubble layer to expose a seed layer comprising the semiconductor material substantially overlying the second insulator layer.

Abstract: A method for fabricating a back-illuminated imager which has a pinned back surface is disclosed. A first insulator layer is formed overlying a mechanical substrate. A conductive layer is deposited overlying the first insulator layer. A second insulator layer is formed overlying the conductive layer to form a first structure, an interface being formed between the conductive layer and the second insulator layer, the conductive layer causing band bending proximal to the interface such that the interface is electrically pinned. Hydrogen is implanted in a separate device wafer to form a bubble layer. A final insulator layer is formed overlying the device wafer to form a second structure. The first structure and the second structure are bonded to form a combined wafer. A portion of the combined wafer is removed underlying the bubble layer to expose a seed layer comprising the semiconductor material substantially overlying the second insulator layer.