Abstract: A projection lens includes a first lens group, a second lens group and an aperture stop. The first lens group is disposed between a reduced side and a magnified side. The second lens is disposed between the first lens group and the magnified side. The second lens group has a light incident surface, a reflective surface and a light emitting surface, the light incident surface faces the first lens group, the light emitting surface faces a projection surface, the light incident surface, the light emitting surface and the first lens group are disposed at a single side of the reflective surface, and at least one of the light incident surface, the reflective surface and the light emitting surface is a freeform surface. The aperture stop is disposed between the first lens group and the second lens group. Moreover, a projection apparatus including the projection lens is also provided.

Abstract: A package structure including a semiconductor die, a redistribution circuit structure and an electronic device is provided. The semiconductor die is laterally encapsulated by an insulating encapsulation. The redistribution circuit structure is disposed on the semiconductor die and the insulating encapsulation. The redistribution circuit structure includes a colored dielectric layer, inter-dielectric layers and redistribution conductive layers embedded in the inter-dielectric layers. The electronic device is disposed over the colored dielectric layer and electrically connected to the redistribution circuit structure.

Abstract: A leadless lower temperature co-crystal phase transition metal heat conductive device comprises two metal substrates made from tin, indium, bismuth and a little other elements; a metal heat conductive sheet installed between the two metal substrates, where the metal substrates having the effect of increasing heat dissipating ability of the metal heat conductive sheet; a heat dissipation device installed above a structure formed by the metal substrates and the metal heat conductive sheet so as to dissipate heat from the metal heat conductive sheet and the two metal substrates; and a fan installed above the heat dissipation device for dissipating heat from the heat dissipation device. When leadless lower temperature co-crystal phase transition metal heat conductive device is placed on a circuit board, the temperature range for co-crystal phase transition is between 50° C. to 70° C.