Patents by Inventor Jeong Hoon Bae
Jeong Hoon Bae has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11990590Abstract: A battery management apparatus and method according to an embodiment of the present disclosure is directed to obtaining a positive electrode profile and a negative electrode profile for a battery cell in a non-destructive manner by appropriately adjusting a preset negative electrode profile. According to one aspect of the present disclosure, by using the battery profile and the adjusted negative electrode profile for the degraded battery cell, there is an advantage that the positive electrode profile of the degraded battery cell may be easily estimated in a non-destructive manner.Type: GrantFiled: June 3, 2021Date of Patent: May 21, 2024Assignee: LG ENERGY SOLUTION, LTD.Inventors: Du-Seong Yoon, Dong-Wook Koh, Jin-Hyung Lim, Gwang-Hoon Jun, Jeong-Mi Choi, Yoon-Jung Bae
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Publication number: 20240149767Abstract: An embodiment armrest assembly for a vehicle includes an armrest rotatably coupled to an armrest board and configured to be extended from the armrest board by rotating forward or to be housed in the armrest board by rotating and standing and a speed-reduction damper mechanism connecting the armrest and the armrest board and configured to make a rotational speed of the armrest uniform by reducing the rotational speed when the armrest rotates to be extended.Type: ApplicationFiled: April 19, 2023Publication date: May 9, 2024Inventors: Tae Hoon Lee, Ji Hwan Kim, Byeong Seon Son, Sang Ho Kim, Sang Hoon Park, Il Hwan Bae, Jeong Ho Kim, Bong Jae Jeong, Min Soo Kim
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Publication number: 20240149768Abstract: An embodiment armrest assembly for a vehicle includes an armrest including a main body and a lid, an armrest board to which the armrest is rotatably coupled and in which the armrest is accommodated in an erect state, and a skirt coupled to a rear bezel housing of the lid and to the armrest board and correspondingly covering a rear space of the lid when the armrest is rotated forward, wherein the skirt has a panel shape and includes a hard material.Type: ApplicationFiled: May 12, 2023Publication date: May 9, 2024Inventors: Tae Hoon Lee, Ji Hwan Kim, Byeong Seon Son, Sang Ho Kim, Sang Hoon Park, Il Hwan Bae, Jeong Ho Kim, Bong Jae Jeong, Min Soo Kim
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Publication number: 20240113852Abstract: A wireless communication system, according to one embodiment of the present invention, comprises: a first communication module; and at least one second communication module wirelessly connected to the first communication module, wherein the first communication module is wirelessly connected to the second communication module to which driving power is applied from the same power source as that of the first communication module.Type: ApplicationFiled: February 10, 2022Publication date: April 4, 2024Inventors: Chang Hoon YOO, Sung Jun BAE, Jeong Hyeon SON, Seung Taek WOO, So Yeon HAM
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Publication number: 20230138593Abstract: A method for manufacturing a semiconductor device may include: forming a plurality of stacked structures over a substrate, the substrate including one or more peripheral circuit regions and one or more cell regions, the stacked structures including first conductive lines and initial memory cells respectively disposed over the first conductive lines, each of the stacked structures extending in a first direction; forming a first insulating layer between the stacked structures; forming second conductive lines over the stacked structures and the first insulating layer, each of the second conductive lines extending in a second direction; forming memory cells by etching the initial memory cells exposed by the second conductive lines; forming a second insulating layer between the second conductive lines and between the memory cells; and removing the first conductive lines, the memory cells, and the second conductive lines in the peripheral circuit regions.Type: ApplicationFiled: May 4, 2022Publication date: May 4, 2023Inventors: Ho Joon SONG, Jeong Hoon BAE, Jae Wan HWANG, Jung Won SEO, Jeong Ho YEON
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Patent number: 7687837Abstract: An image sensor includes a substrate having an active pixel sensor region defined therein, a plurality of first conductivity type photodiodes formed in the active pixel sensor region and a first conductivity-type first deep well formed in the active pixel sensor region in a location which does not include the plurality of the first conductivity-type photodiodes. Moreover, the first deep well is electrically connected to a positive voltage.Type: GrantFiled: October 3, 2006Date of Patent: March 30, 2010Assignee: Samsung Electronics Co., Ltd.Inventors: Young-Hoon Park, Jae-Ho Song, Won-Je Park, Jin-Hyeong Park, Jeong-Hoon Bae, Jung-Ho Park
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Patent number: 7687755Abstract: A CMOS image sensor may be provided. The CMOS image sensor may include at least one floating diffusion column line, a plurality of pixels, and/or a charge/voltage conversion circuit. The plurality of pixels may be connected to the floating diffusion column line in parallel. The charge/voltage conversion circuit may be connected to one end of the floating diffusion column line, and may detect a potential variation of the floating diffusion column line using a coupling capacitor.Type: GrantFiled: February 15, 2008Date of Patent: March 30, 2010Assignee: Samsung Electronics Co., Ltd.Inventors: Jeong-Hoon Bae, Tae-Seok Oh
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Patent number: 7667178Abstract: An image sensor includes a photoelectric conversion section in a semiconductor substrate, the photoelectric conversion section having a capping layer of a first conductivity type and a photodiode of a second conductivity type below the capping layer, the photodiode having an upper surface deeper than about 1 ?m, as measured from an upper surface of the semiconductor substrate, a charge detection section receiving charges stored in the photoelectric conversion through a charge transfer section and converting the received charges into respective electrical signals, a voltage application section adapted to apply voltage to the capping layer and to a lower portion of the semiconductor substrate to control a width of a depletion layer on the photodiode, and a signal operation section adapted to generate red, green, and blue, signals according to signals from the charge detection section.Type: GrantFiled: January 24, 2008Date of Patent: February 23, 2010Assignee: Samsung Electronics Co., Ltd.Inventors: Jeong-hoon Bae, Tae-seok Oh, Ki-hong Kim, Hyoun-min Baek, Won-je Park, Jung-ho Park
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Patent number: 7545423Abstract: A CMOS image sensor with improved sensitivity includes a main pixel array region of an active pixel array region formed on a semiconductor substrate. A passivation layer is formed over the sensor, and it is at least partially removed from the main pixel array region, such that incident light being detected by the main pixel array does not pass through the passivation layer. Optical absorption and refraction caused by the material of the passivation layer are eliminated, resulting in an image sensor with improved optical sensitivity.Type: GrantFiled: January 27, 2005Date of Patent: June 9, 2009Assignee: Samsung Electronics Co., Ltd.Inventors: Young Hoon Park, Ki Hong Kim, Bum Suk Kim, Jeong Hoon Bae, Yu Jin Ahn, Jung Chak Ahn, Soo Cheol Lee, Yong Jei Lee, Sung In Hwang
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Publication number: 20090096901Abstract: An image sensor may include a first common column line and/or at least one first pixel. The at least one first pixel may be connected to the first common column line. The at least one first pixel may include a first photoelectron conversion region, a first transfer gate, a first overflow gate, and/or a first overflow drain region. The first transfer gate may be between the first photoelectron conversion region and the first common column line. The first overflow gate may be spaced from the first transfer gate. The first photoelectron conversion region may be between the first overflow gate and the first transfer gate. The first overflow drain region may be on an opposite side of the first photoelectron conversion region with respect to the first transfer gate. The first overflow gate may be between the first overflow drain region and the first photoelectron conversion region.Type: ApplicationFiled: April 10, 2008Publication date: April 16, 2009Inventors: Jeong-Hoon Bae, Tae-Seok Oh
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Publication number: 20090057535Abstract: A CMOS image sensor may be provided. The CMOS image sensor may include at least one floating diffusion column line, a plurality of pixels, and/or a charge/voltage conversion circuit. The plurality of pixels may be connected to the floating diffusion column line in parallel. The charge/voltage conversion circuit may be connected to one end of the floating diffusion column line, and may detect a potential variation of the floating diffusion column line using a coupling capacitor.Type: ApplicationFiled: February 15, 2008Publication date: March 5, 2009Inventors: Jeong-Hoon Bae, Tae-Seok Oh
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Publication number: 20090045321Abstract: An image sensor includes a photoelectric conversion section in a semiconductor substrate, the photoelectric conversion section having a capping layer of a first conductivity type and a photodiode of a second conductivity type below the capping layer, the photodiode having an upper surface deeper than about 1 ?m, as measured from an upper surface of the semiconductor substrate, a charge detection section receiving charges stored in the photoelectric conversion through a charge transfer section and converting the received charges into respective electrical signals, a voltage application section adapted to apply voltage to the capping layer and to a lower portion of the semiconductor substrate to control a width of a depletion layer on the photodiode, and a signal operation section adapted to generate red, green, and blue, signals according to signals from the charge detection section.Type: ApplicationFiled: January 24, 2008Publication date: February 19, 2009Inventors: Jeong-hoon Bae, Tae-seok Oh, Ki-hong Kim, Hyoun-min Baek, Won-je Park, Jung-ho Park
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Publication number: 20090045479Abstract: An image sensor includes an array of photo-detectors, a plurality of conductive line regions, and a conductive junction region. The array of photo-detectors is formed in a semiconductor substrate. Each conductive line region is formed under a respective line of photo-detectors along a first direction in the substrate. The conductive junction region is formed between the array of photo-detectors and the plurality of conductive line regions in the substrate. The conductive line regions and the conductive junction region form vertical drain structures for the photo-detectors.Type: ApplicationFiled: February 1, 2008Publication date: February 19, 2009Inventors: Jeong-Hoon Bae, Tae-Seok Oh, Ki-Hong Kim, Won-Je Park
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Publication number: 20070075338Abstract: An image sensor includes a substrate having an active pixel sensor region defined therein, a plurality of first conductivity type photodiodes formed in the active pixel sensor region and a first conductivity-type first deep well formed in the active pixel sensor region in a location which does not include the plurality of the first conductivity-type photodiodes. Moreover, the first deep well is electrically connected to a positive voltage.Type: ApplicationFiled: October 3, 2006Publication date: April 5, 2007Inventors: Young-Hoon Park, Jae-Ho Song, Won-Je Park, Jin-Hyeong Park, Jeong-Hoon Bae, Jung-Ho Park