Abstract: Disclosed is a light sensor circuit which works by producing in a photoelectric converting element a photo current proportional to a quantity of incident light falling thereon, converting the photo current into a voltage signal by using a threshold region characteristic of a transistor with a logarithmic output characteristic in a weak inverse state and producing a sensor output corresponding to the voltage signal. The light sensor circuit is provided with an initializing means for removing an electric charge remaining in a parasite capacitor of the photoelectric converting element before detecting light by the same element, thereby achieving a wide dynamic range and obtaining a sensor signal with no afterglow even if it works with a small quantity of incident light.

Abstract: An output compensating device capable of optimally compensating output signals of an image sensor composed of a number of light-sensor circuits, each of which represents a unit pixel and is capable of producing in a photoelectric converting element a sensor current proportional to a quantity of light falling thereon, converting the current into a voltage signal by a MOS type transistor with a logarithmic output characteristic in a weak inverse state, initializing itself by removing a charge accumulated in a parasitic capacitor of the photoelectric converting element by changing a drain voltage of the transistor to a value lower than a normal value for a specified time and outputting a pixel signal having a logarithmic characteristic at a large quantity of the sensor current and a pixel signal having a non-logarithmic characteristic at a small quantity of the sensor current.

Abstract: Disclosed is an image sensor consisting of light sensor circuits arranged to form an array of pixels, each of which produces in a photoelectric converting element a sensor current proportional to the quantity of light falling thereon and converts the sensor current into a voltage signal by a MOS type transistor with a logarithmic output characteristic in a weak inverse state, wherein a means for changing over a drain voltage of the transistor for each light sensor circuit to a value lower than a normal value for a specified time to remove a charge accumulated in a parasitic capacity of the photoelectric converting element to initialize the circuit before detecting a light signal. The image sensor can obtain a voltage signal corresponding to the quantity of incident light even if the sensor current was rapidly changed, thereby eliminating the possibility of occurrence of afterglow of each pixel even at a small quantity of incident light.

Abstract: A photo-sensor circuit according to an embodiment of the present invention comprises a photo-detecting element (PD) for detecting a light signal and converting the same signal into an electric signal, a first MOS transistor (QT) for charging and discharging parasitic capacitance (C1), a capacitor (C2) for accumulating a terminal voltage of the photo-detecting element as a pixel signal, a second MOS transistor (Q2) for transferring a parasitic capacitance charge from the photo-detecting element to the capacitor (C2), a third MOS transistor (Q3) for amplifying the terminal voltage of the capacitor and a fourth MOS transistor (Q4) for selectively outputting an amplified pixel signal.

Abstract: Disclosed is a light sensor circuit which works by producing in a photoelectric converting element a photo current proportional to a quantity of incident light falling thereon, converting the photo current into a voltage signal by using a threshold region characteristic of a transistor with a logarithmic output characteristic in a weak inverse state and producing a sensor output corresponding to the voltage signal. The light sensor circuit is provided with an initializing means for removing an electric charge remaining in a parasite capacitor of the photoelectric converting element before detecting light by the same element, thereby achieving a wide dynamic range and obtaining a sensor signal with no afterglow even if it works with a small quantity of incident light.

Abstract: An output compensating device capable of optimally compensating output signals of an image sensor composed of a number of light-sensor circuits, each of which represents a unit pixel and is capable of producing in a photoelectric converting element a sensor current proportional to a quantity of light falling thereon, converting the current into a voltage signal by a MOS type transistor with a logarithmic output characteristic in a weak inverse state, initializing itself by removing a charge accumulated in a parasitic capacitor of the photoelectric converting element by changing a drain voltage of the transistor to a value lower than a normal value for a specified time and outputting a pixel signal having a logarithmic characteristic at a large quantity of the sensor current and a pixel signal having a non-logarithmic characteristic at a small quantity of the sensor current.

Abstract: In a solid-state image pick-up device having a photoelectrical conversion element cell array with a matrix arrangement of cells, between either a first or second signal line and a prescribed selection circuit that drives the signal line are provided a multiple signal line received light amount value storage means that includes a amount of received light detection means that separately reads out the amount of received light data for a plurality of photoelectrical conversion element cells connected to a plurality of selected signal lines in the other signal group, and a switching means that selectively transmits this detected amount of received light information to an output means.

Abstract: Disclosed is an image sensor consisting of light sensor circuits arranged to form an array of pixels, each of which produces in a photoelectric converting element a sensor current proportional to the quantity of light falling thereon and converts the sensor current into a voltage signal by a MOS type transistor with a logarithmic output characteristic in a weak inverse state, wherein a means for changing over a drain voltage of the transistor for each light sensor circuit to a value lower than a normal value for a specified time to remove a charge accumulated in a parasitic capacity of the photoelectric converting element to initialize the circuit before detecting a light signal. The image sensor can obtain a voltage signal corresponding to the quantity of incident light even if the sensor current was rapidly changed, thereby eliminating the possibility of occurrence of afterglow of each pixel even at a small quantity of incident light.

Abstract: A photosensor signal processing apparatus is used in combination with an image sensor comprised of a matrix of pixels or photosensors capable of producing an output as a linear function and a logarithmic function of incident illumination. The apparatus includes a correction data storage device which stores therein a set of data about the respective photosensors for the correction of individual outputs of the photosensors, and a correcting device for correcting the respective output values of the photosensors on the basis of the correction data. Thus, even when the individual outputs of the photosensors generate have different characteristics, the output characteristic variation between the photosensors are corrected such that the output characteristics of all the photosensors agree with a reference output characteristic. A fixed pattern noise resulting from the pixel-to-pixel output characteristic variation can be suppressed.

Abstract: A solar cell comprising a substrate of insulating material, a bottom side electrode layer formed on one surface of the substrate, a semiconductor photoelectric conversion layer formed on the bottom side electrode layer, a transparent top side electrode layer formed on the semiconductor photoelectric conversion layer and a non-transparent electrode comprising a plurality of strips of non-transparent conductive layers disposed separately from each other on the top side transparent electrode layer. The solar cell further comprises an additional bottom side electrode layer formed on the opposite surface of the substrate and a plurality of conductive paths connecting the bottom side electrode layer to the additional bottom side electrode layer through holes or slits formed to penetrate the substrate.

Abstract: An on-board vehicle display arrangement of a computer graphics device and two video cameras for generating left-viewpoint image and right-viewpoint image of vehicle guiding information, an image synthesizer for synthesizing the left-viewpoint image and right-viewpoint image by alternately arranging their elements by pixel, and a stereoscopic display for separately displaying a left-viewpoint image and a right-viewpoint image of the synthesized image, which images are provided inside the vehicle to display a stereoscopic image with outside information taken through the video cameras, vehicle travel guiding information generated by the computer graphics device according to navigation data, presumed travelling information generated by the computer graphics device according to a prospective running condition estimated from the results of detection of current driving conditions of the vehicle.

Abstract: A photosensor circuit comprises a photoelectric transducer, an n-channel MOS transistor and an initial setting unit for precluding the occurrence of a residual image phenomenon. When an optical signal is generated by the photoelectric transducer, the initial setting unit sets the gate voltage of the n-channel MOS transistor at a high value for a predetermined time to lower the drain-source impedance of the n-channel MOS transistor to thereby control charge or discharge of a capacitor connected to a source terminal.

Abstract: A radar system is designed to allow switched use of a pulse radar mode for detecting a target at a long distance away and a phase-difference radar mode for detecting a target at a short distance away, whereby target detection can be performed from a very close range to a long range with high accuracy. Also, the pulse radar mode enables detection of a plurality of targets in different ranges.

Abstract: A plurality of radar devices are provided on and along the periphery of a vehicle for monitoring in different directions. While sequentially switching the radar device to be used for the monitoring operation in response to a transmission-enable signal, a processing device detects, for each direction, presence of and distance to an obstacle or object on the basis of a phase difference (time difference) between signals transmitted and received via the corresponding radar device. Thus, the processing device causes an image display device to show the detected conditions around the vehicle and also causes a sound synthesizer to output a sound message to call the vehicle operator's attention.

Abstract: This invention relates to a semiconductor sensor for detecting external physical forces, such as acceleration, contact pressures, air pressures, mechanical vibrations, etc. The semiconductor sensor according to this invention is characterized by the use of compound semiconductors of high piezoelectricity, such as GaAs, etc. Conventionally sensors of the cantilever type, diaphragm type, etc. are made of silicon. These prior art sensors have low detection sensitivity, and their characteristics tend to deteriorate. The sensor according to this invention is made of GaAs, which has high piezoelectricity and can retain good characteristics of the semiconductor even at high temperatures and includes a field-effect transistor formed on the GaAs for sensing a stress. The FET is driven by a constant current or a constant voltage so as to detect a change of an electrical characteristic (e.g., threshold characteristic) due to a stress.

Abstract: A semiconductor sensor includes a field-effect transistor for detecting a physical quantity such as pressure, strain, acceleration or the like. The field-effect transistor is disposed on an elastically deformable portion of a cantilevered semiconductor substrate. A detected signal generator generates a signal representing a change in a drain current of the field-effect transistor in response to a stress which is applied to the field-effect transistor due to elastic deformation of the semiconductor substrate. The field-effect transistor may be supplied with a fixed gate bias voltage and an integrator may generate a signal representing an integral of the drain current for temperature compensation. Alternatively, an integrator may generate a signal representing an integral of the drain current, and a gate bias voltage may be applied to the field-effect transistor so that the signal generated by the integrator will be of a predetermined value for automatic temperature compensation.

Abstract: This invention relates to a semiconductor sensor for detecting external physical forces, such as acceleration, contact pressures, air pressures, mechanical vibrations, etc. The semiconductor sensor according to this invention is characterized by the use of compound semiconductors of high piezoelectricity, such as GaAs, etc. Conventionally sensors of the cantilever type, diaphragm type, etc. are made of silicon. These prior art sensors have low detection sensitivity, and their characteristics tend to deteriorate. The sensor according to this invention is made of GaAs, which has high piezoelectricity and can retain good characteristics of the semiconductor even at high temperatures and includes a field-effect transistor formed on the GaAs for sensing a stress. The FET is driven by a constant current or a constant voltage so as to detect a change of an electrical characteristic (e.g., threshold characteristic) due to a stress.

Abstract: A timepiece of the type including a time indicating circuit and an electronic alarm sound generating means.

Abstract: A time signalling device for a timepiece in which the time signalling sound can be obtained in the same signalling sound with the mechanical time signalling means in which the previously produced sound remains to mix with the next sound, and the time signalling sounds in accordance with the more mechanical time signalling means can be electronically produced with good quality by having musical scale signal outputting means which simultaneously provides two musical scale analog signals of the melody sounds with the basis of two kinds of musical data read out of the ROM, by composing in such a way that each of these two musical scale analog signals can be alternatively output from these musical scale signal outputting means, by attenuating each of the output musical note signals for longer while than the time when the next musical note is produced, and, for the time striking sounds, by simultaneously outputting these two musical scale signals to be mixed.

Abstract: A device for generating musical time signalling signals for a timepiece in which combination of the data in ROM installed in the time signalling sound selecting circuit and the controlling action of the time signalling control circuit can simplify the circuit composition performing the complicated and multi-functional time signalling action, and can perform the necessary time signalling action by optional selection to produce a musical sound.