Abstract: A method for fabricating a back-illuminated semiconductor imaging device on a semiconductor-on-insulator substrate, and resulting imaging device is disclosed. The method for manufacturing the imaging device includes the steps of providing a substrate comprising an insulator layer, and an epitaxial layer substantially overlying the insulator layer; fabricating at least one imaging component at least partially overlying and extending into the epitaxial layer; forming a plurality of bond pads substantially overlying the epitaxial layer; fabricating a dielectric layer substantially overlying the epitaxial layer and the at least one imaging component; providing a handle wafer; forming a plurality of conductive trenches in the handle wafer; forming a plurality of conductive bumps on a first surface of the handle wafer substantially underlying the conductive trenches; and bonding the plurality of conductive bumps to the plurality of bond pads.

Abstract: A method for fabricating a back-illuminated semiconductor imaging device and resulting imaging device is disclosed, which includes the steps providing a substrate having a front surface and a back surface; growing an epitaxial layer substantially overlying the front surface of the substrate; forming at least one barrier layer substantially within the epitaxial layer; fabricating at least one imaging structure overlying and extending into the epitaxial layer, the imaging structure at least one charge transfer region, the at least one barrier layer substantially underlying the at least one charge transfer region, wherein light incident on the back surface of the substrate generates charge carriers which are diverted away from the at least one charge transfer region by the at least one barrier layer. At least a portion of the epitaxial layer is grown using an epitaxial lateral overgrowth technique.

Abstract: A method for fabricating a back-illuminated semiconductor imaging device on a semiconductor-on-insulator substrate, and resulting imaging device is disclosed. The method for manufacturing the imaging device includes the steps of providing a substrate comprising an insulator layer, and an epitaxial layer substantially overlying the insulator layer; fabricating at least one imaging component at least partially overlying and extending into the epitaxial layer; forming a plurality of bond pads substantially overlying the epitaxial layer; fabricating a dielectric layer substantially overlying the epitaxial layer and the at least one imaging component; providing a handle wafer; forming a plurality of conductive trenches in the handle wafer; forming a plurality of conductive bumps on a first surface of the handle wafer substantially underlying the conductive trenches; and bonding the plurality of conductive bumps to the plurality of bond pads.

Abstract: A method for fabricating a back-illuminated semiconductor imaging device on a semiconductor-on-insulator substrate, and resulting imaging device is disclosed. The method for manufacturing the imaging device includes the steps of providing a substrate comprising an insulator layer, and an epitaxial layer substantially overlying the insulator layer; fabricating at least one imaging component at least partially overlying and extending into the epitaxial layer; forming a plurality of bond pads substantially overlying the epitaxial layer; fabricating a dielectric layer substantially overlying the epitaxial layer and the at least one imaging component; providing a handle wafer; forming a plurality of conductive trenches in the handle wafer; forming a plurality of conductive bumps on a first surface of the handle wafer substantially underlying the conductive trenches; and bonding the plurality of conductive bumps to the plurality of bond pads.

Abstract: A method for fabricating a back-illuminated semiconductor imaging device on a semiconductor-on-insulator substrate, and resulting imaging device is disclosed. The method for manufacturing the imaging device includes the steps of providing a substrate comprising an insulator layer, and an epitaxial layer substantially overlying the insulator layer; fabricating at least one imaging component at least partially overlying and extending into the epitaxial layer; forming a plurality of bond pads substantially overlying the epitaxial layer; fabricating a dielectric layer substantially overlying the epitaxial layer and the at least one imaging component; providing a handle wafer; forming a plurality of conductive trenches in the handle wafer; forming a plurality of conductive bumps on a first surface of the handle wafer substantially underlying the conductive trenches; and bonding the plurality of conductive bumps to the plurality of bond pads.

Abstract: A method for registering a color filter array to a back illuminated imager is disclosed, comprising the steps of providing at least one color filter array comprising filter elements of at least a first color and a second color; providing at least one back illuminated imager having a front side and a back side and comprising a plurality of pixels proximal to the front side, a first portion of the plurality of pixels being associated with the first color, and a second portion of the plurality of pixels being associated with the second color; illuminating the at least one color filter array and the back side of the back illuminated imager with monochromatic light having a wavelength corresponding to the first color; rotating and translating the at least one color filter array relative to the back illuminated imager; measuring a first response of at least one pixel associated with the second color; and repeating the rotating, translating, and measurement steps until the response is a minimum.

Abstract: A method for fabricating a back-illuminated semiconductor imaging device and resulting imaging device is disclosed, which includes the steps providing a substrate having a front surface and a back surface; growing an epitaxial layer substantially overlying the front surface of the substrate; forming at least one barrier layer substantially within the epitaxial layer; fabricating at least one imaging structure overlying and extending into the epitaxial layer, the imaging structure at least one charge transfer region, the at least one barrier layer substantially underlying the at least one charge transfer region, wherein light incident on the back surface of the substrate generates charge carriers which are diverted away from the at least one charge transfer region by the at least one barrier layer. At least a portion of the epitaxial layer is grown using an epitaxial lateral overgrowth technique.

Abstract: A portable can crushing apparatus which is preferably also readily mountable to a horizontal or vertical support surface is disclosed herein. This apparatus includes a pair of spaced rods and a front end plate which together serve to support a can to be crushed. A back end plate is also provided and serves to support rearward ends of the rods and also the front edge of a holding plate which acts as a footrest during the can crushing operation. This latter operation is carried out by means of a crush plate mounted for slidable movement along the rods and a handle arrangement disposed between and connected with the crush plate and the back end plate.

Abstract: An improved gate injected, floating gate memory device is described having improved charge retention and endurance characteristics is described in which the barrier height for the injection of charge (electrons or holes) into the floating gate is reduced. This is accomplished by utilizing a layer of semi-insulating polycrystalline silicon between the control electrode and the insulating layer over the floating gate.

Abstract: An improved gate injected, floating gate memory device is described having improved charge retention and endurance characteristics is described in which the barrier height for the injection of charge (electrons or holes) into the floating gate is reduced. This is accomplished by utilizing a layer of semi-insulating polycrystalline silicon between the control electrode and the insulating layer over the floating gate.

Abstract: Epitaxial layers of silicon, having thicknesses of at least about 25 .mu.m, are grown on the (100) or (111) planar surfaces of silicon substrates by the vapor deposition of silicon from the reaction of dichlorosilane and hydrogen gas in a reactor furnace. Good epitaxial layers of silicon of substantially uniform thicknesses are formed on the substrates when the growth rate of the epitaxial layer is between about 5 and 20 .mu.m/minute in the reactor furnace, and the latter is heated to a temperature of between about 1050.degree. and 1200.degree.C.