Patents by Inventor Yong Jei Lee
Yong Jei Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10602086Abstract: A method of operating a three-dimensional image sensor may include: obtaining position information of an object using light emitted by a light source module, the three-dimensional image sensor including the light source module having a light source and a lens; and adjusting a relative position of the light source to the lens based on the obtained position information of the object. A method of operating an image sensor may include: obtaining position information of an object using light emitted by a light source module, the image sensor including the light source module; and adjusting an emission angle of the light emitted by the light source module based on the obtained position information.Type: GrantFiled: October 14, 2015Date of Patent: March 24, 2020Assignee: Samsung Electronics Co., Ltd.Inventors: Seung-Hyuk Chang, Yoon-Dong Park, Yong-Jei Lee
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Patent number: 9673237Abstract: A depth pixel of a three-dimensional image sensor includes a first photo gate which is turned on/off in response to a first photo control signal, a first photo detection area configured to generate first charges based on a received light reflected from a subject when the first photo gate is turned on, a first transmission gate which is turned on/off in response to a first transmission control signal, a first floating diffusion area configured to accumulate the first charges generated from the first photo detection area when the first transmission gate is turned on, and a first compensation unit configured to generate second charges which are different from the first charges based on ambient light components included in the received light to supply the second charges to the first floating diffusion area.Type: GrantFiled: December 10, 2013Date of Patent: June 6, 2017Assignee: Samsung Electronics Co., Ltd.Inventors: Seoung-Hyun Kim, Yoon-Dong Park, Yong-Jei Lee, Joo-Yeong Gong, Hee-Woo Park, Seung-Won Cha, Sung-Chul Kim
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Patent number: 9344657Abstract: A depth pixel of an image sensor includes a depth sensing element configured to generate first charges that are photo-electrically converted from a light reflected from an object, a first floating diffusion node configured to receive the first charges from the depth sensing element, a second floating diffusion node configured to output second charges corresponding to a component of a reflection light where a component of an ambient light is cancelled, and an ambient light cancellation circuit configured to detect the ambient light to control a barrier level of a charge transfer path between the first floating diffusion node and the second floating diffusion node in response to the ambient light.Type: GrantFiled: November 29, 2013Date of Patent: May 17, 2016Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Seoung-Hyun Kim, Yoon-Dong Park, Yong-Jei Lee, Joo-Yeong Gong, Hee-Woo Park, Seung-Won Cha
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Publication number: 20160037094Abstract: A method of operating a three-dimensional image sensor may include: obtaining position information of an object using light emitted by a light source module, the three-dimensional image sensor including the light source module having a light source and a lens; and adjusting a relative position of the light source to the lens based on the obtained position information of the object. A method of operating an image sensor may include: obtaining position information of an object using light emitted by a light source module, the image sensor including the light source module; and adjusting an emission angle of the light emitted by the light source module based on the obtained position information.Type: ApplicationFiled: October 14, 2015Publication date: February 4, 2016Inventors: Seung-Hyuk CHANG, Yoon-Dong PARK, Yong-Jei LEE
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Patent number: 9225922Abstract: In a method of operating an image sensor, a noise voltage of a floating diffusion region is sampled after a reset voltage is applied to the floating diffusion region. A storage region, in which a photo-charge is stored, is electrically connected to the floating diffusion region after sampling the noise voltage, and a demodulation voltage of the floating diffusion region is sampled after the storage region and the floating diffusion region are electrically-connected. A voltage is determined based on the noise voltage and the demodulation voltage.Type: GrantFiled: July 17, 2012Date of Patent: December 29, 2015Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Tae-Yon Lee, Yoon-Dong Park, Yong-Jei Lee, Seoung-Hyun Kim, Joo-Yeong Gong, Sung-Kwon Hong
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Patent number: 8835826Abstract: A pixel circuit for a depth sensor operating in a detection period and an output period in either a first operating mode (high incident light intensity) or a second operating mode (low incident light intensity). The pixel circuit includes a light receiving unit generating charge in response to the incident light, a signal generation unit accumulating charge in a FDN in response to a transmission signal, reset signal and selection signal during the detection period, and generating an analog signal having a level corresponding to a voltage apparent at the FDN during the output period, and a refresh transistor coupled between a supply voltage and the light receiving unit and discharging charge to the supply voltage in response to a refresh signal.Type: GrantFiled: September 12, 2012Date of Patent: September 16, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Yong-Jei Lee, Yoon-Dong Park, Young-Gu Jin
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Publication number: 20140253905Abstract: A depth pixel of an image sensor includes a depth sensing element configured to generate first charges that are photo-electrically converted from a light reflected from an object, a first floating diffusion node configured to receive the first charges from the depth sensing element, a second floating diffusion node configured to output second charges corresponding to a component of a reflection light where a component of an ambient light is cancelled, and an ambient light cancellation circuit configured to detect the ambient light to control a barrier level of a charge transfer path between the first floating diffusion node and the second floating diffusion node in response to the ambient light.Type: ApplicationFiled: November 29, 2013Publication date: September 11, 2014Applicant: Samsung Electronics Co., LtdInventors: Seoung-Hyun KIM, Yoon-Dong PARK, Yong-Jei LEE, Joo-Yeong GONG, Hee-Woo PARK, Seung-Won CHA
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Publication number: 20140225173Abstract: A depth pixel of a three-dimensional image sensor includes a first photo gate which is turned on/off in response to a first photo control signal, a first photo detection area configured to generate first charges based on a received light reflected from a subject when the first photo gate is turned on, a first transmission gate which is turned on/off in response to a first transmission control signal, a first floating diffusion area configured to accumulate the first charges generated from the first photo detection area when the first transmission gate is turned on, and a first compensation unit configured to generate second charges which are different from the first charges based on ambient light components included in the received light to supply the second charges to the first floating diffusion area.Type: ApplicationFiled: December 10, 2013Publication date: August 14, 2014Inventors: SEOUNG-HYUN KIM, YOON-DONG PARK, YONG-JEI LEE, JOO-YEONG GONG, HEE-WOO PARK, SEUNG-WON CHA
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Publication number: 20140198183Abstract: A depth-sensing pixel included in a three-dimensional (3D) image sensor includes: a photoelectric conversion device configured to generate an electrical charge by converting modulated light reflected by a subject; a capture transistor, controlled by a capture signal applied to the gate thereof, the photoelectric conversion device being connected to the drain thereof; and a transfer transistor, controlled by a transfer signal applied to the gate thereof, the source of the capture transistor being connected to the drain thereof, and a floating diffusion region being connected to the source thereof.Type: ApplicationFiled: January 15, 2014Publication date: July 17, 2014Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Seoung-hyun Kim, Yong-jei Lee, Joo-yeong Gong, Sung-chul Kim, Yoon-dong Park, Hee-woo Park, Seung-won Cha
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Patent number: 8487351Abstract: The image sensor and an image sensing system including the same are provided. The image sensor includes a semiconductor substrate, a pixel array formed at a pixel area located in the semiconductor substrate and comprising a plurality of photoelectric converts, a plurality of driver circuits formed at a circuit area defined in the semiconductor substrate. The image sensor includes at least one heat blocker or heat shield. The at least one heat blocker may be formed between the pixel area and the circuit area in the semiconductor substrate. The heat blocker or heat shield may block or dissipate heat generated at the circuit area from being transferred to the pixel area through the semiconductor substrate. The heat blocker or heat shield may be used in image sensors using a back-side illumination sensor (BIS) structure or image sensors using a silicon on insulator (SOI) semiconductor substrate.Type: GrantFiled: November 25, 2009Date of Patent: July 16, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Kyung Ho Lee, Dong-Yoon Jang, Jung Chak Ahn, Moo Sup Lim, Yong Jei Lee, Jong Eun Park
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Patent number: 8451362Abstract: An image sensor includes a conductive well in a semiconductor substrate, a photo sensitive device (PSD) in the semiconductor substrate below the conductive well, the PSD and conductive well overlapping each other, and a charge transmission unit in the semiconductor substrate and adjacent to the conductive well, the charge transmission unit having a structure of a recessed gate and being positioned in a recess region of the semiconductor substrate.Type: GrantFiled: August 18, 2009Date of Patent: May 28, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Yong Jei Lee, Jung Chak Ahn, Jong Eun Park, Dong-Yoon Jang
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Publication number: 20130126716Abstract: A pixel circuit for a depth sensor operating in a detection period and an output period in either a first operating mode (high incident light intensity) or a second operating mode (low incident light intensity). The pixel circuit includes a light receiving unit generating charge in response to the incident light, a signal generation unit accumulating charge in a FDN in response to a transmission signal, reset signal and selection signal during the detection period, and generating an analog signal having a level corresponding to a voltage apparent at the FDN during the output period, and a refresh transistor coupled between a supply voltage and the light receiving unit and discharging charge to the supply voltage in response to a refresh signal.Type: ApplicationFiled: September 12, 2012Publication date: May 23, 2013Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: YONG-JEI LEE, YOON-DONG PARK, YOUNG-GU JIN
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Publication number: 20130119234Abstract: A unit pixel of a three-dimensional image sensor includes a non-silicon photodetector and at least one readout circuit. The non-silicon photodetector is formed at a silicon substrate, and the non-silicon photodetector comprising at least one of non-silicon materials to generate a photocharge in response to incident light. The at least one readout circuit is formed at the silicon substrate, the at least one readout circuit outputs a sensing signal based on the photocharge, and the sensing signal generates depth information on a distance to an object.Type: ApplicationFiled: September 13, 2012Publication date: May 16, 2013Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Yong-Jei LEE, Young-Gu JIN, Tae-Yon LEE, Yoon-Dong PARK, Eric R. FOSSUM
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Publication number: 20130020463Abstract: In a method of operating an image sensor, a noise voltage of a floating diffusion region is sampled after a reset voltage is applied to the floating diffusion region. A storage region, in which a photo-charge is stored, is electrically connected to the floating diffusion region after sampling the noise voltage, and a demodulation voltage of the floating diffusion region is sampled after the storage region and the floating diffusion region are electrically-connected. A voltage is determined based on the noise voltage and the demodulation voltage.Type: ApplicationFiled: July 17, 2012Publication date: January 24, 2013Inventors: Tae-Yon Lee, Yoon-Dong Park, Yong-Jei Lee, Seoung-Hyun Kim, Joo-Yeong Gong, Sung-Kwon Hong
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Publication number: 20120249740Abstract: A three-dimensional image sensor may include a light source module configured to emit at least one light to an object, a sensing circuit configured to polarize a received light that represents the at least one light reflected from the object and configured to convert the polarized light to electrical signals, and a control unit configured to control the light source module and sensing circuit. A camera may include a receiving lens; a sensor module configured to generate depth data, the depth data including depth information of objects based on a received light from the objects; an engine unit configured to generate a depth map of the objects based on the depth data, configured to segment the objects in the depth map, and configured to generate a control signal for controlling the receiving lens based on the segmented objects; and a motor unit configured to control focusing of the receiving lens.Type: ApplicationFiled: March 28, 2012Publication date: October 4, 2012Inventors: Tae-Yon LEE, Joon-Ho LEE, Yoon-Dong PARK, Kyoung-Ho HA, Yong-Jei LEE, Kwang-Hyuk BAE, Kyu-Min KYUNG, Tae-Chan KIM
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Publication number: 20100140733Abstract: In an example embodiment, the backside-illuminated image sensor includes a substrate including a plurality of photoelectric conversion devices being separated by a semiconductor. The backside-illuminated sensor further includes a transparent electrode layer or a metal layer formed on a surface of a substrate. As a positive bias voltage or a negative bias voltage is applied to the transparent electrode layer or the metal layer, generation of dark current in the surface of the silicon substrate may be reduced or suppressed.Type: ApplicationFiled: December 4, 2009Publication date: June 10, 2010Inventors: Yong Jei Lee, Jung Chak Ahn, Jong Eun Park, Dong-Yoon Jang
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Publication number: 20100133635Abstract: The image sensor and an image sensing system including the same are provided. The image sensor includes a semiconductor substrate, a pixel array formed at a pixel area located in the semiconductor substrate and comprising a plurality of photoelectric converts, a plurality of driver circuits formed at a circuit area defined in the semiconductor substrate. The image sensor includes at least one heat blocker or heat shield. The at least one heat blocker may be formed between the pixel area and the circuit area in the semiconductor substrate. The heat blocker or heat shield may block or dissipate heat generated at the circuit area from being transferred to the pixel area through the semiconductor substrate. The heat blocker or heat shield may be used in image sensors using a back-side illumination sensor (BIS) structure or image sensors using a silicon on insulator (SOI) semiconductor substrate.Type: ApplicationFiled: November 25, 2009Publication date: June 3, 2010Inventors: Kyung Ho Lee, Dong-Yoon Jang, Jung Chak Ahn, Moo Sup Lim, Yong Jei Lee, Jong Eun Park
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Publication number: 20100133638Abstract: An image sensor includes a plurality of photodiodes, a plurality of wells isolating the plurality of photodiodes from each other, and a plurality of conductive layers or conductive lines for suppressing a dark current generated at the surface of the photodiodes and in the wells in response to a bias voltage.Type: ApplicationFiled: November 30, 2009Publication date: June 3, 2010Inventors: Jong Eun Park, Jung Chak Ahn, Yong Jei Lee, Dong-Yoon Jang
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Publication number: 20100134668Abstract: An image sensor includes a plurality of wells for isolating a plurality of photodiodes from each other. Each of the wells includes a P-type well region and an N-type well region configured to receive a positive bias voltage. The image sensor provides a clearer image by suppressing a blooming effect and a dark current.Type: ApplicationFiled: November 30, 2009Publication date: June 3, 2010Inventors: Jong Eun Park, Yong Jei Lee, Jung Chak Ahn, Dong-Yoon Jang
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Publication number: 20100045836Abstract: An image sensor includes a conductive well in a semiconductor substrate, a photo sensitive device (PSD) in the semiconductor substrate below the conductive well, the PSD and conductive well overlapping each other, and a charge transmission unit in the semiconductor substrate and adjacent to the conductive well, the charge transmission unit having a structure of a recessed gate and being positioned in a recess region of the semiconductor substrate.Type: ApplicationFiled: August 18, 2009Publication date: February 25, 2010Inventors: Yong Jei Lee, Jung Chak Ahn, Jong Eun Park, Dong-Yoon Jang