Abstract: Light emitting devices and components having excellent chemical resistance and related methods are disclosed. In one embodiment, a component of a light emitting device can include a silver (Ag) portion, which can be silver on a substrate, and a protective layer disposed over the Ag portion. The protective layer can at least partially include an inorganic material for increasing the chemical resistance of the Ag portion.

Abstract: A semiconductor wafer is preheated with a halogen lamp, and then is heated by irradiation with a flash of light emitted from a flash lamp. The preheating with the halogen lamp is continued for a short time even after the flash lamp turns off. A radiation thermometer measures a front surface temperature and a back surface temperature of the semiconductor wafer. A temperature integrated value is calculated by integration of temperatures of the semiconductor wafer measured during a period from a start of the flash irradiation to an end of the heating of the semiconductor wafer. It is determined that the semiconductor wafer is cracked at the time of flash irradiation when the calculated temperature integrated value deviates from a preset range between an upper limit value and a lower limit value.

Abstract: A memory device including a base chip and a memory cube mounted on and connected with the base chip is described. The memory cube includes multiple stacked tiers, and each tier of the multiple stacked tiers includes semiconductor chips laterally wrapped by an encapsulant and a redistribution structure. The semiconductor chips of the multiple stacked tiers are electrically connected with the base chip through the redistribution structures in the multiple stacked tiers. The memory cube includes a thermal path structure extending through the multiple stacked tiers and connected to the base chip. The thermal path structure has a thermal conductivity larger than that of the encapsulant. The thermal path structure is electrically isolated from the semiconductor chips in the multiple stacked tiers and the base chip.

Abstract: An organic compound and a manufacturing method thereof, and an organic light emitting diode electroluminescent device are provided. The organic compound has a suitable HOMO energy level and a high hole mobility. Compared with traditional hole transport materials, when the organic compound is applied in a hole transport layer of the organic light emitting diode electroluminescent device, the organic light emitting diode electroluminescent device has enhanced maximum current efficiency, maximum external quantum efficiency, and service lifespans.

Abstract: An integrated circuit includes a substrate layer and a resistor bank in a polysilicon layer disposed on the substrate layer. The resistor bank includes a plurality of resistor elements having a body portion extending in a longitudinal direction. A metal line is disposed in a metal layer above the polysilicon layer to extend transverse to the longitudinal direction and across the body portion of a group of the plurality of resistor elements, thereby forming a first region of the resistor bank and a second region of the resistor bank. The first region is separated from the second region by the metal line. A resistor device having a predetermined resistance includes a subset of the resistor elements in the group electrically coupled together in the second region. The resistor device also includes first and second terminals located in the same first or second region of the resistor bank.

Abstract: A semiconductor memory device includes a stack of word lines and insulating patterns. Cell pillars extend vertically through the stack of word lines and insulating patterns with memory cells being formed at the junctions of the cell pillars and the word lines. A ratio of the thickness of the word lines to the thickness of immediately neighboring insulating patterns is different at different locations along one or more of the cell pillars. Related methods of manufacturing and systems are also disclosed.

Abstract: Enhanced thermal energy transfer systems for semiconductor packages are provided. A thermally conductive member is disposed in the interstitial space between an upper surface of a semiconductor package and a lower surface of a thermal member. The thermally conductive member is disposed above a first portion of the upper surface of the semiconductor package having a relatively higher thermal energy output when the semiconductor package is operating. A thermal interface material is disposed in the interstitial space and a force applied to the thermal member. The thermally conductive member forms a relatively higher pressure region above the first portion of the semiconductor package and a relatively lower pressure region in other portions of the semiconductor package remote from the thermally conductive member. The increased pressure region proximate the thermally conductive member beneficially enhances the flow of thermal energy from the first portion of the semiconductor package to the thermal member.

Abstract: The present application discloses an OTP memory. A cell structure includes a first active region and a second active region that intersect vertically; an EDNMOS is formed in the first active region, and a PMOS is formed in the second active region; a body portion of a channel region of the PMOS is formed a drift region of the EDNMOS, a first polysilicon gate of the EDNMOS serves as a control gate, and a second polysilicon gate of the PMOS serves as a floating gate; and the PMOS is programmed by means of hot carriers generated in the drift region of the EDNMOS. The present application further discloses a method for manufacturing an OTP memory. In the present application, high-speed writing can be implemented.

Abstract: The present disclosure relates to a display structure, a display panel including the display structure, and a display device including the display panel and an image acquisition device. The display structure includes a plurality of pixels disposed in a first region of the display structure, wherein each pixel of the plurality of pixels includes a plurality of sub-pixels of N number of colors, and each sub-pixel of the plurality of sub-pixels includes an organic light emitting diode; and N number of driving circuits disposed in a second region of the display structure, wherein an ith driving circuit of the N number of driving circuits is configured to drive each sub-pixel of an ith color of the plurality of sub-pixels, wherein 1?i?N and N is an integer greater than 1.

Abstract: A display substrate, a manufacturing method thereof, and a display device are disclosed. The display substrate includes a base substrate; a pixel defining layer on the base substrate, the pixel defining layer includes a plurality of openings, the pixel defining layer includes a first pixel defining layer, a conductive layer, and a second pixel defining layer which are stacked, in the pixel defining layer in at least a peripheral region of the display substrate, an orthographic projection of the conductive layer on the base substrate completely falls within an orthographic projection of the second pixel defining layer on the base substrate; and an electroluminescent unit including a transparent electrode the transparent electrode is electrically connected with the conductive layer in the pixel defining layer in at least the peripheral region of the display substrate.

Abstract: In one embodiment, a method includes providing a substrate comprising a source/drain contact region and a dummy gate, forming a first etch stop layer aligned to the source/drain contact region, where the first etch stop layer does not cover the dummy gate. The method may include forming a second etch stop layer over the first etch stop layer, the second etch stop layer covering the first etch stop layer and the dummy gate. The method may include converting the dummy gate to a metal gate. The method may include removing the second etch stop layer using a plasma etching process. The method may include removing the first etch stop layer.

Abstract: The present disclosure provides one embodiment of a semiconductor structure. The semiconductor structure includes a substrate having a front side and a back side; a gate stack formed on the front side of the substrate and disposed on an active region of the substrate; a first source/drain feature formed on the active region and disposed at an edge of the gate stack; a backside power rail formed on the back side of the substrate; and a backside contact feature interposed between the backside power rail and the first source/drain feature, and electrically connecting the backside power rail to the first source/drain feature. The backside contact feature further includes a first silicide layer on the back side of the substrate.

Abstract: Disclosed are an array substrate, a method for fabricating the same, a display panel, and a display device, and the array substrate includes: an underlying substrate, and gate lines and data lines located on the underlying substrate, and intersecting with each other, a layer where the gate lines are located is between a layer where the data lines are located, and the underlying substrate; and the array substrate further includes a buffer layer located between the underlying substrate and the layer where the gate lines are located; and the buffer layer includes a plurality of through-holes, where orthographical projections of the through-holes onto the underlying substrate cover orthographical projections of the areas where the gate lines intersect with the data lines, onto the underlying substrate.

Abstract: Polymeric films, which may be adhesive films, and display devices including such polymeric films, wherein a polymeric film includes: a first polymeric layer having two major surfaces, wherein the first polymeric layer includes a first polymeric matrix and particles. The first polymeric layer includes: a first a polyolefin-based low WVTR adhesive polymeric matrix having a refractive index n1; and particles having a refractive index n2 uniformly dispersed within the first polymeric matrix; wherein the particles are present in an amount of less than 30 vol-%, based on the volume of the first polymeric layer, and have a particle size range of 400 nanometers (nm) to 3000 nm; and wherein n1 is different than n2.

Abstract: Methods and apparatus for fabricating memory devices are provided. In one aspect, an intermediate stack of dielectric layers are formed on a first stack of dielectric layers in a first tier. The intermediate stack of dielectric layers is then partially or fully etched and have a landing pad layer deposited thereon. In response to planarizing the landing pad layer to expose a top surface of the intermediate stack of dielectric layers, a second stack of dielectric layers are deposited above the planarized landing pad layer. A staircase is formed by etching through the second stack, the intermediate stack, and the first stack of dielectric layers in the staircase region of the memory device. The staircase is located adjacent to one end of the center landing pad, where steps of the staircase are formed within the thickness of the center landing pad.

Abstract: A cost effective process flow for manufacturing semiconductor on insulator structures is parallel is provided. Each of the multiple semiconductor-on-insulator composite structures prepared in parallel comprises a charge trapping layer (CTL).

Abstract: An aluminum nitride sintered body contains 1 to 5% by weight of yttrium oxide (Y2O3), 10 to 100 ppm by weight of titanium (Ti), and the balance being aluminum nitride (AlN). Accordingly, a volume resistance value and thermal conductivity at a high temperature are improved, and the generation of impurities during a semiconductor manufacturing process can be suppressed.

Abstract: A semiconductor device includes an extremely thin semiconductor-on-insulator substrate (ETSOI) having a base substrate, a thin semiconductor layer and a buried dielectric therebetween. A device channel is formed in the thin semiconductor layer. Source and drain regions are formed at opposing positions relative to the device channel. The source and drain regions include an n-type material deposited on the buried dielectric within a thickness of the thin semiconductor layer. A gate structure is formed over the device channel.

Abstract: A semiconductor structure includes a first alternating stack of first insulating layers and first electrically conductive layers having first stepped surfaces and located over a substrate, a second alternating stack of second insulating layers and second electrically conductive layers having second stepped surfaces, and memory opening fill structures extending through the alternating stacks. A contact via assembly is provided, which includes a first conductive via structure vertically extending from a top surface of one of the first electrically conductive layers through a subset of layers within the second alternating stack and through the second retro-stepped dielectric material portion, an insulating spacer located within an opening through the subset of layers, and a second conductive via structure laterally surrounding the insulating spacer and contacting a second electrically conductive layer.

Abstract: A method for manufacturing a light emitting device includes: preparing a wavelength conversion member; preparing a light emitting element comprising a pair of electrodes at a second face side of the light emitting element; forming a light transmissive member, which includes: disposing a liquid resin material on a second main face of the wavelength conversion member, disposing the light emitting element on the liquid resin material such that (i) a first face of the light emitting element is opposed to the second main face of the wavelength converting member, (ii) a portion of a first lateral face of the light emitting element and a portion of a second lateral face of the light emitting element are covered by the liquid resin material, and (iii) a first corner of the light emitting element is exposed from the liquid resin material, and curing the liquid resin material; and forming a covering member.