Abstract: An image sensor includes a substrate having a plurality of pixel regions, a lower layer on the substrate; a plurality of color filters on the lower layer, and a micro-lens layer on or covering top surfaces of the color filters. The micro-lens layer extends to a location between two of the color filters and contacts the lower layer on one of the pixel regions. The color filters are spaced apart from the lower layer.

Abstract: A printed circuit board includes an insulating layer and a circuit layer disposed on the insulating layer. The circuit layer includes a first circuit pattern and a second circuit pattern. Each of the first and second circuit patterns has a first side surface, a second side surface opposing the first side surface, and a top surface connected to ends of the first and second side surfaces, when viewed in a cross section direction. The first side surface of the first circuit pattern and the first side surface of the second circuit pattern face each other. A height of the first side surface of the first circuit pattern is greater than a height of the second side surface of the first circuit pattern, and a height of the first side surface of the second circuit pattern is greater than a height of the second side surface of the second circuit pattern.

Abstract: The present technology relates to a solid-state imaging element and electronic equipment that allow an increase in the signal charge amount Qs that each pixel can accumulate. A solid-state imaging element according to the first aspect of the present technology includes: a photoelectric conversion section formed in each pixel; and an inter-pixel separation section separating the photoelectric conversion section of each pixel, in which the inter-pixel separation section includes a protruding section having a shape protruding toward the photoelectric conversion section. The present technology can be applied to a back-illuminated CMOS image sensor, for example.

Abstract: A display device may include a first pixel column disposed on a substrate, a second pixel column adjacent to the first pixel column, a third pixel column adjacent to the second pixel column, and a first wiring, a second wiring, and a third wiring respectively and electrically connected to the first pixel column, the second pixel column, and the third pixel column. Each of the first wiring, the second wiring, and the third wiring may include a first line, a second line electrically connected to the first line, the first line and the second line being disposed on different layers, and a third line electrically connected to the second line, the first line, the second line, and the third line being disposed on different layers.

Abstract: A light emitting transducer including a flexible sheet having a bottom side and a top side, the flexible sheet including a substrate that is stretchable and compressible, the substrate having a bottom substrate surface at the bottom side, and a top substrate surface facing towards the top side, the top substrate surface comprising a surface pattern of a plurality of raised and depressed micro-scale surface portions which extend in at least one direction; a light emitting diode layer above the substrate and conforming in shape to the top substrate surface, the light emitting diode layer corresponding with the surface pattern of the top substrate surface, wherein the light emitting diode layer has a bottom diode surface facing towards the bottom side, and a top diode surface facing towards the top side, a bottom electrode on the bottom diode surface, and a top electrode on the top diode surface.

Abstract: A display device may include a substrate, a pixel, a transistor, a data line, a connection line, a pad, and an electrostatic discharge protection circuit. The substrate may include a display area and a pad area. The pad area may overlap the display area. The pixel may be supported by the display area and may include a pixel electrode. The data line may be electrically connected through the transistor to the pixel electrode. The connection line may be supported by the display area and may be electrically connected through the data line to the transistor. The pad may be supported by the pad area and may be electrically connected through the connection line to the data line. The display area and the pad area may be positioned between the connection line and the pad. The electrostatic discharge protection circuit may be electrically connected to the connection line.

Abstract: An image sensor is provided comprising a substrate comprising first and second surfaces opposite to each other. A first isolation layer is disposed on the substrate and forms a boundary of a sensing region. A second isolation layer is disposed at least partially in the substrate within the sensing region and has a closed line shape. A photoelectric conversion device is disposed within the closed line shape of the second isolation layer, and a color filter is disposed on the first surface of the substrate.

Abstract: Variations in photoelectric conversion performance between pixels (valid pixels and light-shielding pixels) in an imaging element are reduced.

Abstract: A method of manufacturing an organic light emitting diode (OLED) display device includes: providing a substrate including a display area and a non-display area; forming an organic light emitting diode element in the display area; forming a barrier wall around the display area and spaced apart from the organic light emitting diode element; performing a plasma treatment on the substrate on which the organic light emitting diode element is formed; and forming a thin film encapsulation layer for coating the organic light emitting diode element, wherein forming the thin film encapsulation layer includes: forming at least one inorganic layer; and forming at least one organic layer inwardly of the barrier wall.

Abstract: A solid-state imaging device includes a plurality of pixels two-dimensionally arranged on a semiconductor substrate. Each of the pixels includes at least one shallow light receiving portion formed near a surface of the semiconductor substrate and at least one deep light receiving portion formed under the shallow light receiving portion. One or more of the shallow light receiving portions and the deep light receiving portion are connected to each other so as to form a second light receiving portion. The rest of the shallow light receiving portions forms a first light receiving portion. Excess electric charge in the first light receiving portion is discharged to the deep light receiving portion.

Abstract: An optical sensor includes a substrate, a first/second/third well disposed in a sensing region, a deep trench isolation structure, and a passivation layer. The substrate has a first conductivity type and includes the sensing region. The first well has a second conductivity type and a first depth. The second well has the second conductivity type and a second depth. The third well has the first conductivity type and a third depth. The deep trench isolation structure is disposed in the substrate and surrounding the sensing region, wherein the depth of the deep trench isolation structure is greater than the first depth, the first depth is greater than the second depth, and the second depth is greater than the third depth. The passivation layer is disposed over the substrate, wherein the passivation layer includes a plurality of protruding portions disposed directly above the sensing region.

Abstract: An image sensor includes a substrate material. The substrate material includes a plurality of photodiodes disposed therein. The plurality of photodiodes includes a plurality of small photodiodes (SPDs) and a plurality of large photodiodes (LPDs) larger than the SPDs. An array of color filters is disposed over the substrate material. A buffer layer is disposed between the substrate material and the array of color filters. A metal pattern is disposed between the color filters in the array of color filters, and between the array of color filters and the buffer layer. An attenuation layer is disposed between the substrate material and the array of color filters. The attenuation layer is above and aligned with the plurality of SPDs and a portion of each of the plurality of LPDs. An edge of the attenuation layer is over one of the plurality of LPDs.

Abstract: An image sensor includes a substrate including a plurality of pixel regions and having a trench between the pixel regions, a photoelectric conversion part in the substrate of each of the pixel regions, and a device isolation pattern in the trench. The device isolation pattern defines an air gap. The device isolation pattern has an intermediate portion and an upper portion narrower than the intermediate portion.

Abstract: Present disclosure provides a pixel for receiving an incident light, the pixel including a semiconductor substrate, a photo diode in the semiconductor substrate, and a metasurface structure over the semiconductor substrate. The metasurface structure has a first side and a second side opposite to the first side, the first side of the metasurface structure facing the semiconductor substrate, the second side of the metasurface structure facing the incident light. The metasurface structure includes a plurality of trenches at the second side, wherein the plurality of trenches have a same profile from a cross-sectional view.

Abstract: A semiconductor device has a first transistor of a first conductivity type and a second transistor of a second conductivity type, the first transistor is arranged in an active region of a semiconductor substrate, and a gate electrode and the active region overlap with each other in a plan view and also have a portion located between the source and the drain of the first transistor of the semiconductor substrate. In the channel width direction, an impurity concentration of the second conductivity type is higher at the end than on the center side of the portion.

Abstract: The present technology relates to a solid-state imaging device that includes a sensor substrate having at least a first pixel region and a second pixel region, and a light shielding body substrate which is stacked on an upper surface of the sensor substrate and has a light shielding body surrounding a plurality of light guide paths, in which the plurality of light guide paths includes at least a first light guide path corresponding to the first pixel region, and a second light guide path corresponding to the second pixel region, a plurality of pixels included in the first pixel region has a light shielding structure based on respective pixel positions in the first pixel region, and a plurality of pixels included in the second pixel region has a light shielding structure based on respective pixel positions in the second pixel region.

Abstract: The present technology relates to a solid-state imaging device that can reduce the number of steps and enhance mechanical strength, a method of manufacturing the solid-state imaging device, and an electronic apparatus. The solid-state imaging device includes a laminate including a first semiconductor substrate having a pixel region and at least one second semiconductor substrate having a logic circuit, the at least one second semiconductor substrate being bonded to the first semiconductor substrate such that the first semiconductor substrate becomes an uppermost layer, and a penetration connecting portion that penetrates from the first semiconductor substrate into the second semiconductor substrate and connects a first wiring layer formed in the first semiconductor substrate to a second wiring layer formed in the second semiconductor substrate. The first wiring layer is formed with Al or Cu. The present technology is applicable, for example, to a back-surface irradiation type CMOS image sensor.

Abstract: There are provided a display unit and an electronic apparatus that are capable of preventing color mixture in adjacent color pixels, and improving color reproducibility and chromaticity viewing angle. The display unit includes: a drive substrate having a plurality of pixels with a partition therebetween; and a first light shielding film provided on the partition.

Abstract: Fabrication of a circuit with superposed transistors includes assembly of a structure having transistors formed from a first semiconducting layer with a support provided with a second semiconducting layer in which transistors are provided on a higher level. The second semiconducting layer is coated with a thin layer of silicon oxide. The assembly of said structure and the support is made by direct bonding in which the thin silicon oxide layer is bonded to oxidised portions of getter material.

Abstract: A pressure sensor for detecting pressure is provided. A pressure sensor including: a sensor portion that is provided in a diaphragm in a substrate; a circuit portion that is provided on the substrate and electrically connected to the sensor portion; a pad of conductivity that is provided above the substrate; and a first protective film that is provided on the pad, wherein the first protective film is also provided above the circuit portion, is provided. The first protective film may cover the circuit portion entirely. The first protective film may not cover at least part of the sensor portion. The first protective film may cover part of the sensor portion.

Abstract: A method of manufacturing a semiconductor device includes: providing a semiconductive substrate; forming a gate structure over the semiconductive substrate; forming a first dielectric layer over the gate structure; forming a first through hole in the first dielectric layer adjacent to and spaced apart from a sidewall of the gate structure; filling the first through hole with a material; forming a via in the first dielectric layer by etching the material and the first dielectric layer; removing the material to form a second through hole in the first dielectric layer; and forming a conductive structure by filling the via and the second through hole with a conductive material.

Abstract: The present technique relates to a solid-state image pickup element and an electronic apparatus each of which enables a pad to be formed in a shallow position while reduction of a quality of a back side illumination type solid-state image pickup element is suppressed. The solid-state image pickup element includes a pixel substrate in which a light condensing layer for condensing incident light on a photoelectric conversion element, a semiconductor layer in which the photoelectric conversion element is formed, and a wiring layer in which a wiring and a pad for outside connection are formed are laminated on one another, and at least a part of a first surface of the pad is exposed through a through hole completely extending through the light condensing layer and the semiconductor layer. The present technique, for example, can be applied to a back side illumination type CMOS image sensor.

Abstract: A method of manufacturing an organic electroluminescence display panel includes: forming pixel electrodes in matrix on a substrate; arranging column banks extending in column direction above the substrate along row direction, the banks each being between adjacent pixel electrodes in the row direction; applying ink containing organic light emitting material to gaps between adjacent banks, the applied ink being continuous in the column direction; reducing pressure of atmosphere including the substrate to first pressure while positioning a rectifying plate at first distance from upper surface of the substrate, the plate covering region with the ink applied on the substrate; reducing, after the reducing, the pressure to second pressure, which is lower than the first pressure, or lower while positioning the plate at second distance, which is greater than the first distance, from the surface; heating the substrate to form organic functional layer; and forming counter electrode above the functional layer.

Abstract: Provided herein are devices, systems, and methods of employing the same for the performance of bioinformatics analysis. The apparatuses and methods of the disclosure are directed in part to large scale graphene FET sensors, arrays, and integrated circuits employing the same for analyte measurements. The present GFET sensors, arrays, and integrated circuits may be fabricated using conventional CMOS processing techniques based on improved GFET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense GFET sensor based arrays. Improved fabrication techniques employing graphene as a reaction layer provide for rapid data acquisition from small sensors to large and dense arrays of sensors. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes, including DNA hybridization and/or sequencing reactions.

Abstract: The present disclosure relates to a solid-state image-capturing element and an electronic device capable of reducing the capacitance by using a hollow region. At least a part of a region between an FD wiring connected to a floating diffusion and a wiring other than the FD wiring is a hollow region. The present disclosure can be applied to a CMOS image sensor having, for example, a floating diffusion, a transfer transistor, an amplifying transistor, a selection transistor, a reset transistor, and a photodiode.

Abstract: An optical sensor includes an optical layer disposed on a substrate, and a light shielding layer disposed on the optical layer, wherein the light shielding layer includes a first opening that partially exposes the optical layer. The optical sensor also includes a polymer material layer that fills the first opening, wherein a top surface of the polymer material layer is higher than a top surface of the light shielding layer. The optical sensor further includes an adhesive layer disposed on the light shielding layer and the polymer material layer, and a surface component disposed on the adhesive layer.

Abstract: A method of manufacturing a semiconductor device includes providing a semiconductor substrate having a top surface, on which has been formed a color filter and a micro-lens, and a bottom surface opposite to the top surface, forming a redistribution line on the bottom surface of the semiconductor substrate, and forming on the bottom surface of the semiconductor substrate a passivation layer covering the redistribution line. After the redistribution line and passivation layer are formed, an oxide layer between the redistribution line and the passivation is formed at a temperature that avoids thermal damage to the color filter and the micro-lens.

Abstract: According to an aspect, a stack packaging structure includes a substrate, a semiconductor device coupled to a surface of the substrate, an image sensor device coupled to the semiconductor device such that the semiconductor device is disposed between the surface of the substrate and the image sensor device, at least one bond wire connected to the image sensor device and the surface of the substrate, a inner molding disposed between the surface of the substrate and the image sensor device, where the semiconductor device is encapsulated within the inner molding, and an outer molding disposed on the surface of the substrate, where the at least one bond wire is encapsulated within the outer molding.

Abstract: An image sensor includes a substrate including a light-receiving region and a light-shielding region, a device isolation pattern in the substrate of the light-receiving region to define active pixels, and a device isolation region in the substrate of the light-shielding region to define reference pixels. An isolation technique of the device isolation pattern is different from that of the device isolation region.

Abstract: The present technology relates to a solid-state imaging apparatus and an electronic device that are configured to enhance the accuracy in the detection of polarization information. The solid-state imaging apparatus has a pixel array block on which pixels each including a photoelectric conversion device are arranged; a polarizer, including a conductive light-shielding material, that covers a photosensitive surface of the above-mentioned photoelectric conversion device of at least part of the above-mentioned pixels; a light-shielding film, including a conductive light-shielding material, that is arranged between the above-mentioned adjacent pixels on the photosensitive surface side of the above-mentioned photoelectric conversion device; and a wiring layer arranged on a side opposite to the photosensitive surface of the above-mentioned photoelectric conversion device, in which the above-mentioned polarizer is connected to a wiring of the above-mentioned wiring layer via the above-mentioned light-shielding film.

Abstract: An electronic device has a mounted image sensor including a light shielding body having light shielding walls and light transmitting portions each formed in an opening between the light shielding walls, a first light-shielding layer formed on a light incident surface side of the light shielding body and having an opening narrower than the opening of the light shielding body for each of the openings of the light shielding body, a microlens provided for each of the openings of the first light-shielding layer on the light incident surface side of the light shielding body, and a light receiving element layer with an array of a large number of light receiving elements. The present disclosure can be used for, for example, a compound-eye optical system.

Abstract: A seeker imaging system and method includes at least one imager, a plurality of optical elements, and control electronics. The at least one imager is configured to output image frame data. The plurality of optical elements are configured to receive light and direct the light to the at least one imager. The control electronics are configured to receive the image frame data from the at least one imager. The control electronics is configured to obtain a plurality of initial images from each frame of the image frame data, and wherein the control electronics is configured to generate a single output image based upon the plurality of initial images.

Abstract: Embodiments related to a method of manufacturing of an imager and an imager device are shown and depicted.

Abstract: A magnetic device and method for programming the magnetic device are described. The magnetic device includes a plurality of magnetic junctions and at least one spin-orbit interaction (SO) active layer having a plurality of sides. The SO active layer(s) carry a current in direction(s) substantially perpendicular to the plurality of sides. Each of the magnetic junction(s) is adjacent to the sides and substantially surrounds a portion of the SO active layer. Each magnetic junction includes a free layer, a reference layer and a nonmagnetic spacer layer between the pinned and free layers. The SO active layer(s) exert a SO torque on the free layer due to the current passing through the SO active layer(s). The free layer is switchable between stable magnetic states. The free layer may be written using the current and, in some aspects, another current driven through the magnetic junction.

Abstract: The image sensor includes: a semiconductor substrate having a first conductivity type and including a first surface, a second surface opposite to the first surface, and a well region adjacent to the first surface. A first vertical transfer gate and a second vertical transfer gate are spaced apart from each other and extend in a thickness direction of the semiconductor substrate from the first surface to pass through at least a part of the well region. A photoelectric conversion region has a second conductivity type, which is different from the first conductivity type, is located in the semiconductor substrate between the well region and the second surface, and overlaps the first vertical transfer gate and the second vertical transfer gate in the thickness direction of the semiconductor substrate. A wiring structure is located on the first surface of the semiconductor substrate.

Abstract: A image sensor includes a semiconductor substrate with a photosensitive region. Metallization layers are stacked over the semiconductor substrate. Each metallization layer includes an etch stop layer and a dielectric layer on the etch stop layer. At least one metallization layer includes one or more microlenses positioned over the photosensitive region. The one or more microlenses are integrally formed by the etch stop layer.

Abstract: A method for manufacturing a pixel unit includes the following steps. A channel layer is formed. A first pattern layer is formed above the channel layer and includes a scan line and a gate electrode. A second pattern layer is formed above the first pattern layer and includes a data line and a source electrode, where the source electrode is electrically connected to the channel layer. A third pattern layer is formed above the second pattern layer and includes a drain electrode and an auxiliary electrode, where the drain electrode is electrically connected to the channel layer. The auxiliary electrode is electrically connected to the scan line through a first contact hole.

Abstract: A lighting device includes a light source array, a wavelength converting member, and a light guide plate. The light source array includes light sources configured to emit primary light rays. The wavelength converting member includes a wavelength converting portion, a holding portion, and non-wavelength converting portions. The wavelength converting portion contains phosphors configured to emit secondary light rays when excited by the primary light rays. The wavelength converting member is disposed between the light guide plate and the light source array. The light guide plate includes a light entering surface, a light exiting surface, an opposite surface that is on an opposite side from the light exiting surface, and a light reflecting and scattering pattern. The light reflecting and scattering pattern includes complementary color dots formed in sections of the opposite surface on non-wavelength converting portion sides. The complementary color dots absorb the primary light rays.

Abstract: The invention relates to processes for producing semi-transparent photoactive layers, and devices comprising the same. The invention provides a process for producing a semi-transparent photoactive layer comprising: a) disposing on a substrate a composition, which composition comprises a photoactive material or one or more precursors of a photoactive material, to form a resulting layer; and b) dewetting the resulting layer to form a dewet layer of the photoactive material, wherein the dewet layer of the photoactive material is semi-transparent. The invention also provides a semi-transparent photoactive layer comprising a substrate and, disposed on the substrate, a dewet layer of a photoactive material, wherein the dewet layer of a photoactive material comprises a plurality of absorbing regions which comprise the photoactive material and a plurality of transparent regions which do not substantially comprise the photoactive material.

Abstract: An imaging device includes a semiconductor layer and a pixel cell. The pixel cell includes an impurity region of a first conductivity type, the impurity region located in the semiconductor layer, a photoelectric converter electrically connected to the impurity region and located above the semiconductor layer, a first transistor having a first gate, a first source and a first drain, one of the first source and the first drain electrically connected to the impurity region, a second transistor having a second gate of a second conductivity type different from the first conductivity type, a second source and a second drain, the second transistor including the impurity region as one of the second source and the second drain, the second gate electrically connected to the impurity region, and a third transistor having a third gate, a third source and a third drain, the third gate electrically connected to the photoelectric converter.

Abstract: An image pickup element mounting substrate includes: a frame body composed of an insulating layer, a through hole being defined by an internal periphery of the frame body; an electronic component mounted on a lower surface side of the frame body; and a flat plate which is disposed on a lower surface of the frame body and covers an opening of the through hole while being partly kept in out-of-contact with the electronic component, the flat plate including an image pickup element mounting section at a part of an upper surface thereof which part is surrounded by the frame body, a lower surface of the electronic component being located above a level of a lower surface of the flat plate.

Abstract: An image capturing device includes: a first substrate; a second substrate arranged so that the second substrate overlaps the first substrate; a pixel unit having a plurality of pixels arranged in a matrix shape on the first substrate; a first vertical scanning circuit arranged on one of the first substrate and the second substrate and configured to output a control signal supplied to every row or every two or more rows of the plurality of pixels; and a plurality of first buffers arranged on the second substrate so that the plurality of first buffers overlap the pixel unit, provided in correspondence with one row or a plurality of rows of the plurality of pixels, and connected to respective signal lines through which the control signal output from the first vertical scanning circuit is transmitted.

Abstract: A manufacturing method of an array substrate, an array substrate and a display device are provided. The method includes the following operations: forming a light shielding layer formed of a metal blacken production on a base substrate, wherein the metal blacken production is a product by blackening a metal; forming a preset film layer on the base substrate which is provided with the light shielding layer; forming both a pattern of the light shielding layer and a pattern of the preset film layer through one patterning process. The method of forming a pattern of the light shielding layer and a pattern of the preset film layer through one patterning process saves one patterning process.

Abstract: Systems and methods in accordance with embodiments of the invention actively align a lens stack array with an array of focal planes to construct an array camera module. In one embodiment, a method for actively aligning a lens stack array with a sensor that has a focal plane array includes: aligning the lens stack array relative to the sensor in an initial position; varying the spatial relationship between the lens stack array and the sensor; capturing images of a known target that has a region of interest using a plurality of active focal planes at different spatial relationships; scoring the images based on the extent to which the region of interest is focused in the images; selecting a spatial relationship between the lens stack array and the sensor based on a comparison of the scores; and forming an array camera subassembly based on the selected spatial relationship.

Abstract: A lens array substrate includes a substrate with a concave portion provided in a first face thereof, and a lens layer having a substantially flat surface provided to cover the first face and fill the concave portion. The lens layer includes a first layer and a second layer which are sequentially laminated from a substrate side by reflecting the shape of the concave portion therein. A refractive index of the first layer is different from a refractive index of the second layer. The second layer, the first layer, and the second layer are sequentially exposed to the surface of the lens layer in this order in a first direction in a plan view. The second layer, the first layer, the substrate, the first layer, and the second layer are sequentially exposed to the surface of the lens layer in this order in a second direction that intersects the first direction.

Abstract: An image sensor device is provided. The image sensor device includes a semiconductor substrate having a front surface, a back surface opposite to the front surface, at least one light-sensing region close to the front surface, and a first trench surrounding the light-sensing region. The first trench has an inner wall and a bottom surface. The image sensor device includes an insulating layer covering the back surface, the inner wall, and the bottom surface. A thickness of a first upper portion of the insulating layer in the first trench increases in a direction away from the front surface, and the insulating layer has a second trench partially in the first trench. The image sensor device includes a reflective structure filled in the second trench. The reflective structure has a light reflectivity ranging from about 70% to about 100%.

Abstract: A display substrate, a method for manufacturing the display substrate, and a display device are provided. The display substrate includes a display area and a non-display area surrounding the display area. The non-display area of the display substrate includes a shading pattern, to prevent light from being transmitted through the non-display area.

Abstract: Embodiments of the present disclosure generally relate to methods for forming a TFT having a metal oxide layer. The method may include forming a metal oxide layer and treating the metal oxide layer with a fluorine containing gas or plasma. The fluorine treatment of the metal oxide layer helps fill the oxygen vacancies in the metal oxide channel layer, leading to a more stable TFT and preventing a negative threshold voltage in the TFT.

Abstract: A capacitive fingerprint sensing unit and enhanced capacitive fingerprint reader using the capacitive fingerprint sensing units are disclosed. The enhanced capacitive fingerprint reader includes a number of capacitive fingerprint sensing units, forming a fingerprint sensing array; a conductive element; and an excitation signal driver, for providing excitation signals to the conductive element. By increasing the thicknesses of a first inter-metal dielectric layer and a second inter-metal dielectric layer in fingerprint sensing units in the enhanced capacitive fingerprint reader, sensitivity of the enhanced capacitive fingerprint reader can be improved.

Abstract: A magnetic device and method for programming the magnetic device are described. The magnetic device includes a plurality of magnetic junctions and at least one spin-orbit interaction (SO) active layer having a plurality of sides and an axis. The SO active layer(s) carry a current in direction(s) substantially perpendicular to the plurality of sides along the axis. Each of the magnetic junction(s) is adjacent to the sides and substantially surrounds a portion of the SO active layer. Each magnetic junction includes a free layer, a reference layer and a nonmagnetic spacer layer between the pinned and free layers. The SO active layer(s) exert a SO torque on the free layer due to the current passing through the SO active layer(s). The free layer is switchable between stable magnetic states. The free layer may be written using the current and, in some aspects, another current driven through the magnetic junction.