Abstract: A CMOS image sensor includes a substrate including silicon, a silicon germanium (SiGe) epitaxial layer formed over the substrate, the SiGe epitaxial layer formed through epitaxial growth and doped with a predetermined concentration level of impurities, an undoped silicon epitaxial layer formed over the SiGe epitaxial layer by epitaxial growth, and a photodiode region formed from a top surface of the undoped silicon epitaxial layer to a predetermined depth in the SiGe epitaxial layer.

Abstract: According to the present disclosure, it is possible to further miniaturize the gate electrode of the field-effect transistor. The field-effect transistor includes a substrate; a semiconductor layer configured to be formed on the substrate and have a fin region formed thereon with a source region and a drain region formed at both ends of the fin region; and a gate electrode configured to have a convex portion partially in contact with at least two faces of the fin region.

Abstract: Methods and systems for a combination of up converters and semiconductor light sources in low voltage display or indicator system that can be battery powered. The display or indicator system includes one or more spatial light modulators and one or more up converters in combination with one or more semiconductor light sources. The spatial light modulator can be a liquid crystal display or a micro electro mechanical system or other spatial light modulator and can use direct modulation of the semiconductor light sources to modulate the visible emission from the up converters. The spatial light modulator can be placed between the up converting light source and the viewer or behind the up converting light source depending on the type of spatial light modulator, or modulation may be applied directly to one or more semiconductor light sources or arrays of semiconductor light sources that excite the up converters.

Abstract: Provided is an image sensor device. The image sensor device includes a substrate having a front side and a back side. The image sensor also includes an isolation feature disposed in the substrate. The image sensor further includes a radiation-sensing region disposed in the substrate and adjacent to the isolation feature. The radiation-sensing region is operable to sense radiation projected toward the radiation-sensing region from the back side. The image sensor also includes a transparent conductive layer disposed over the back side of the substrate.

Abstract: BSI image sensors and methods. In an embodiment, a substrate is provided having a sensor array and a periphery region and having a front side and a back side surface; a bottom anti-reflective coating (BARC) is formed over the back side to a first thickness, over the sensor array region and the periphery region; forming a first dielectric layer over the BARC; a metal shield is formed; selectively removing the metal shield from over the sensor array region; selectively removing the first dielectric layer from over the sensor array region, wherein a portion of the first thickness of the BARC is also removed and a remainder of the first thickness of the BARC remains during the process of selectively removing the first dielectric layer; forming a second dielectric layer over the remainder of the BARC and over the metal shield; and forming a passivation layer over the second dielectric layer.

Abstract: Methods of fabricating bypass diodes for solar cells are described. In one embodiment, a method includes forming a first conductive region of a first conductivity type above a substrate of a solar cell. A second conductive region of a second conductivity type is formed on the first conductive region. In another embodiment, a method includes forming a first conductive region of a first conductivity type above a substrate of a solar cell. A second conductive region of a second conductivity type is formed within, and surrounded by, an uppermost portion of the first conductive region but is not formed in a lowermost portion of the first conductive region.

Abstract: An image sensor pixel includes a photosensitive element having a first doping type disposed in semiconductor material. A deep extension having the first doping type is disposed beneath and overlapping the photosensitive element in the semiconductor material. A floating diffusion is disposed in the semiconductor material. A transfer gate is disposed over a gate oxide that is disposed over the semiconductor material. The transfer gate is disposed between the photosensitive element and the floating diffusion. The photosensitive element and the deep extension are stacked in the semiconductor material in a “U” shape extending from under the transfer gate.

Abstract: A semiconductor device 100 includes a thin-film transistor 123 and a thin-film diode 124. The thin-film transistor 123 includes a semiconductor layer S1 with a channel region 114, a source region and a drain region 112, a gate electrode 109 that controls the conductivity of the channel region 114, and a gate insulating film 108 arranged between the semiconductor layer and the gate electrode 109. The thin-film diode 124 includes a semiconductor layer S2 with at least an n-type region 113 and a p-type region 117. The respective semiconductor layers S1 and S2 of the thin-film transistor 123 and the thin-film diode 124 are portions of a single crystalline semiconductor layer, obtained by crystallizing the same crystalline semiconductor film, but have been crystallized to mutually different degrees.

Abstract: Embodiments relate to photo cell devices. In an embodiment, a photo cell device includes an array of transmission layers having different optical thicknesses and with photo diodes underneath. The transmission layers can include two different materials, such as a nitride and an oxide, that cover each diode with a different proportional area density in a damascene-like manner. Embodiments provide advantages over conventional devices, including that they can be integrated into a standard CMOS process and therefore simpler and less expensive to produce.

Abstract: Disclosed are a pinned photodiode having and electrically controllable pinning layer and an image sensor including the pinned photodiode. A predetermined voltage is applied to the pinning layer for the depletion duration of the photodiode in the image sensor, so that stable surface pinning is acquired and the uniform surface pinning is achieved between pixels.

Abstract: An apparatus for reducing photodiode thermal gain coefficient includes a bulk semiconductor material having a light-illumination side. The bulk semiconductor material includes a minority charge carrier diffusion length property configured to substantially match a predetermined hole diffusion length value and a thickness configured to substantially match a predetermined photodiode layer thickness. The apparatus also includes a dead layer coupled to the light-illumination side of the bulk semiconductor material, the dead layer having a thickness configured to substantially match a predetermined thickness value and wherein an absolute value of a thermal coefficient of gain due to the minority carrier diffusion length property of the bulk semiconductor material is configured to substantially match an absolute value of a thermal coefficient of gain due to the thickness of the dead layer.

Abstract: To fabricate an active matrix type display device integrated with an image sensor at a low cost and without complicating process, the image sensor includes a thin film transistor is in a pixel of a plurality of pixels, an insulating layer is over the thin film transistor, a plurality of first electrodes, which is a shielding layer, is over the insulating layer, a photoelectric conversion layer including a semiconductor film is over the plurality of the first electrodes, and a second electrode over the photoelectric conversion layer. The thin film transistor can include polycrystal silicon. The semiconductor film can include amorphous silicon.

Abstract: A unit pixel capable of achieving full initialization of a floating diffusion area, a pixel array including the unit pixel, and a photodetecting device including the pixel array. The unit pixel includes a photodetector, a transmission transistor for transmitting charges generated from the photodetector to a floating diffusion area, a reset transistor for initializing the floating diffusion area, and a boosting capacitor having a first terminal connected to the floating diffusion area and a second terminal to which a boosting voltage is applied.

Abstract: A method includes forming a plurality of image sensors on a front side of a semiconductor substrate, and forming a dielectric layer on a backside of the semiconductor substrate. The dielectric layer is over the semiconductor substrate. The dielectric layer is patterned into a plurality of grid-filling regions, wherein each of the plurality of grid-filling regions overlaps one of the plurality of image sensors. A metal layer is formed on top surfaces and sidewalls of the plurality of grid-filling regions. The metal layer is etched to remove horizontal portions of the metal layer, wherein vertical portions of the metal layer remain after the step of etching to form a metal grid. A transparent material is filled into grid openings of the metal grid.

Abstract: A solid-state imaging device includes a semiconductor substrate, photodiodes, a first insulating film, a second insulating film, a third insulating film, and a color filter. The photodiodes are disposed on the semiconductor substrate. The first insulating film covers a multilayer wiring on the semiconductor substrate. The first insulating film comprises a material having a first refractive index lower than a refractive index of the semiconductor substrate for at least bottom surface and top surface portions of the first insulating film. The second insulating film has a second refractive index higher than the first refractive index. The third insulating film has a third refractive index higher than the second refractive index.

Abstract: A photo diode array includes: a substrate having a major face and a back face; photo diodes separated from each other and arrayed in parallel on the major face of the substrate and being linear in a plan view facing the major face of the substrate; a buried layer between the photo diodes and including a separating channel having a V-shape cross section; and a first metal mirror on an inclined face of the separating channel, reflecting incident light entering from the back face of the substrate, and leading the incident light to light-absorbing layers of the photo diodes. Band gap energy of the buried layer is wider than band gap energies of the light-absorbing layers.

Abstract: A vertically-integrated active pixel sensor includes a sensor wafer connected to a support circuit wafer. Inter-wafer connectors or connector wires transfer signals between the sensor wafer and the support circuit wafer. The active pixel sensor can be fabricated by attaching the sensor wafer to a handle wafer using a removable interface layer. Once the sensor wafer is attached to the handle wafer, the sensor wafer is backside thinned to a given thickness. The support circuit wafer is then attached to the sensor wafer and the handle wafer separated from the sensor wafer.

Abstract: An object of the present invention is to prevent a sensitivity difference between pixels. There are disposed plural unit cells each including plural photodiodes 101A and 101B, plural transfer MOSFETs 102A and 102B arranged corresponding to the plural photodiodes, respectively, and a common MOSFET 104 which amplifies and outputs signals read from the plural photodiodes. Each pair within the unit cell, composed of the photodiode and the transfer MOSFET provided corresponding to the photodiode, has translational symmetry with respect to one another. Within the unit cell, there are included a reset MOSFET and selecting MOSFET.

Abstract: This disclosure relates to an active pixel cell including a shallow trench isolation (STI) structure. The active pixel cell further includes a photodiode neighboring the STI structure, where a first stress resulted from substrate processing prior to deposition of a pre-metal dielectric layer increases dark current and white cell counts of a photodiode of the active pixel cell. The active pixel cell further includes a transistor, where the transistor controls the operation of the active pixel cell. The active pixel cell further includes a stress layer over the photodiode, the STI structure, and the transistor, and the stress layer has a second stress that counters the first stress exerted on the substrate, and the second stress reduces the dark current and the white cell counts caused by the first stress.

Abstract: The invention relates to a semiconductor device with a semiconductor body comprising a CMOS image sensor with a plurality of active pixels arranged in rows and columns each pixel comprising a pinned photodiode and a plurality of transistors for operating the pixel in the image forming process and including reset means. According to the invention the semiconductor device comprises also precharge means by which the photodiode can be precharged by a fixed amount of charge carriers after it has been reset by the reset means. In this way the sensors has a highly linear response, in particular at low light/radiation level, and a very low noise. The sensor is very suitable for X-ray/medical applications.

Abstract: The present invention, in a photoelectric conversion device in which a pixel including a photoelectric conversion device for converting a light into a signal charge and a peripheral circuit including a circuit for processing the signal charge outside a pixel region in which the pixel are disposed on the same substrate, comprising: a first semiconductor region of a first conductivity type for forming the photoelectric region, the first semiconductor region being formed in a second semiconductor region of a second conductivity type; and a third semiconductor region of the first conductivity type and a fourth semiconductor region of the second conductivity type for forming the peripheral circuit, the third and fourth semiconductor regions being formed in the second semiconductor region; wherein in that the impurity concentration of the first semiconductor region is higher than the impurity concentration of the third semiconductor region.

Abstract: An electronic image sensor includes a semiconductor substrate having a first surface configured for accepting illumination to a pixel array disposed in the substrate. An electrically-doped channel region for each pixel is disposed at a second substrate surface opposite the first substrate surface. The channel regions are for collecting photogenerated charge in the substrate. An electrically-doped channel stop region is at the second substrate surface between each channel region. An electrically-doped shutter buried layer, disposed in the substrate at a depth from the second substrate surface that is greater than that of the pixel channel regions, extends across the pixel array. An electrically-doped photogenerated-charge-extinguishment layer, at the first substrate surface, extends across the pixel array.

Abstract: A floating diffusion region is formed at an edge of a light-receiving surface of an embedded photodiode, with a transfer gate electrode located therebetween. A first region, with radially extending portions centered on the FD region, and a second region, located to the outside of the first region, are created in the substantially sector-shaped light-receiving surface. A dopant whose conductivity type is the same as the signal charges to be collected in the first region are introduced, whereby an electric field for moving the signal charges from the radially extending sections towards the center is created due to a three-dimensional field effect. As a result, the charge-transfer time is reduced. Additionally, since a circuit element in the subsequent stage can be placed adjacent to the floating diffusion region, the parasitic capacitance of the floating diffusion region can be reduced and a highly sensitive element can be obtained.

Abstract: A solid-state image pickup device includes a solid-state image sensor chip having a solid-state image sensor having a photosensitive element formed on a main surface of a semiconductor substrate and chip electrodes led to the back surface of the semiconductor substrate, a passive chip bonded on the back surface of the solid-state image sensor chips having passive parts mounted in its thickness and electrically connected to the chip electrodes of the solid-state image sensors. The device further includes a lens holder fixed to enclose the photosensitive element of the solid-state image pickup sensor chip and a lens barrel to fit into the lens holders, wherein the passive chip is formed having a size equal to or smaller than a size of the solid-state image sensors.

Abstract: A solid-state image pickup device in which electric charges accumulated in a photodiode conversion element are transferred to a second diffusion layer through a first diffusion layer.

Abstract: The present specification discloses front-side contact back-side illuminated (FSC-BSL) photodiode array having improved characteristics such as high speed of each photodiode, uniformity of the bias voltage applied to different photodiode, low bias voltage, reduced resistance of each photodiode, and an associated reduction in noise. The photodiode array is made of photodiodes with front metallic cathode pads, front metallic anode pad, back metallic cathode pads, n+ doped regions and a p+ doped region. The front metallic cathode pads physically contact the n+ doped regions and the front metallic anode pad physically contacts the p+ doped region. The back metallic cathode pads physically contact the n+ doped region.

Abstract: A thin film transistor array panel according to an exemplary embodiment of the present invention includes: a gate electrode disposed on an insulation substrate; a gate insulating layer disposed on the gate electrode; a semiconductor disposed on the gate insulating layer; an etching stop layer disposed on the semiconductor; an insulating layer disposed on the gate insulating layer; and a source electrode and a drain electrode overlapping the semiconductor. The semiconductor and the gate insulating layer have a first portion on which the etching stop layer and the insulating layer are disposed, and a second portion on which etching stop layer and the insulating layer are not disposed. The source electrode and the drain electrode are disposed on the second portion of the semiconductor and the gate insulating layer.

Abstract: An image sensor includes a plurality of unit pixels. Each unit pixel has a photo diode for sensing external light to generate photo charges. A transfer transistor is connected to the photo diode for storing the photo charges generated in the photo diode into a floating diffusion region when being turned-on. An amplification transistor amplifies the photo charges stored into the floating diffusion region. A select transistor, connected to the amplification transistor, performs a switching operation. An output line, extended in a column direction, outputs the photo charges in accordance with the switching operation of the select transistor. The photo diode may be formed in such a manner to share the output line with its adjacent photo diode in a horizontal direction, so that the photo charges generated in the photo diode and its adjacent photo diode are outputted through the output line.

Abstract: A microlens, an image sensor including the microlens, a method of forming the microlens and a method of manufacturing the image sensor are provided. The microlens includes a polysilicon pattern, having a cylindrical shape, formed on a substrate, and a round-type shell portion enclosing the polysilicon pattern. The microlens may further include a filler material filling an interior of the shell portion, or a second shell portion covering the first shell portion. The method of forming a microlens includes forming a silicon pattern on a semiconductor substrate having a lower structure, forming a capping film on the semiconductor substrate over the silicon pattern, annealing the silicon pattern and the capping film altering the silicon pattern to a polysilicon pattern having a cylindrical shape and the capping film to a shell portion for a round-type microlens, and filling an interior of the shell portion with a lens material through an opening between the semiconductor substrate and an edge of the shell portion.

Abstract: A solid-state imaging device has improved operating characteristics including a greater withstand voltage and a decrease in the operational noise for the transistors of the device. The solid-state imaging device includes at least a photoelectric converting portion and a plurality of field effect transistors, preferably a thickness of a gate insulating film for the readout and amplifier transistors are different than gate thicknesses of other transistors.

Abstract: A method for forming an image sensing device is disclosed. An epitaxy layer having the first conductivity type is formed on a substrate, wherein the epitaxy layer comprises a first pixel area corresponding to a first incident light, a second pixel area corresponding to a second incident light, and a third pixel area corresponding to a third incident light. A first deep well is formed in a lower portion of the epitaxy layer for reducing pixel-to-pixel talk of the image sensing device. A second deep well is formed in a lower portion of the epitaxy layer.

Abstract: A manufacturing method for a solid-state image sensor, the method comprises the steps of: forming a charge storage region in a photoelectric converting unit by implanting a semiconductor substrate with ions of an impurity of a first conductivity type, using a first mask; heating the semiconductor substrate at a temperature of no less than 800° C. and no more than 1200° C. through RTA (Rapid Thermal Annealing); forming a surface region of the charge storage region by implanting the semiconductor substrate with ions of an impurity of a second conductivity type, using a second a mask; heating the semiconductor substrate at a temperature of no less than 800° C. and no more than 1200° C. through RTA (Rapid Thermal Annealing); and forming an antireflection film that covers the photoelectric converting unit at a temperature of less than 800° C., after the step of forming the surface region, in this order.

Abstract: Image sensor arrays may include bulk-charge-modulated-device (BCMD) sensor pixels. The BCMD sensor pixels may be used in back-side-illuminated (BSI) image sensors. A BCMD sensor pixel need not include a dedicated addressing transistor. The BCMD sensor pixel may include a gated drain reset (GDR) structure that is used to perform reset operations. The GDR structure may be shared among multiple pixels, which provides increased charge storage capacity for high resolution image sensors. A negative back body bias may be applied to the BCMD pixel array, allowing the depletion region under each BCMD pixel to extend all the way to the back silicon surface. Extending the depletion region by negatively biasing the back silicon surface may serve to minimize pixel crosstalk.

Abstract: A semiconductor device includes a substrate, a region including a semiconductor element on the substrate, and at least one guard ring structure provided around the region. The guard ring structure includes a guard ring and at least one portion comprised of the substrate.

Abstract: An image sensor array includes a substrate layer, a metal layer, an epitaxial layer, a plurality of imaging pixels, and a contact dummy pixel. The metal layer is disposed above the substrate layer. The epitaxial layer is disposed between the substrate layer and the metal layer. The imaging pixels are disposed within the epitaxial layer and each include a photosensitive element for collecting an image signal. The contact dummy pixel is dispose within the epitaxial layer and includes an electrical conducting path through the epitaxial layer. The electrical conducting path couples to the metal layer above the epitaxial layer.

Abstract: Each pixel of a solid state imaging device comprises: a first semiconductor layer; a second semiconductor layer; a third semiconductor layer and fourth semiconductor layer formed on the lateral side of the upper region of the second layer not to be in contact with the top surface of the second semiconductor layer; a gate conductor layer formed on the lower side of the second semiconductor layer; a conductor electrode formed on the side of the fourth semiconductor layer via an insulating film; and a fifth semiconductor layer formed on the top surface of the second semiconductor layer, wherein at least the third semiconductor layer, upper region of the second semiconductor layer, fourth semiconductor layer, and fifth semiconductor layer are formed in the shape of an island. A specific voltage is applied to the conductor electrode to accumulate holes in the surface region of the fourth semiconductor layer.

Abstract: Photodiode arrays and methods of fabrication are provided. One photodiode array includes a silicon wafer having a first surface and an opposite second surface. The photodiode array also includes a plurality of refilled conductive vias through the silicon wafer, wherein the refilled conductive vias have a doping type different than the doping type of the substrate, and an interface between the refilled conductive vias and the substrate form diode junctions. The photodiode array further includes a patterned doped layer on the first surface overlapping the refilled conductive vias, wherein the patterned doped layer defines an array of photodiodes.

Abstract: A light detecting array structure and a light detecting module are provided. The light detecting array structure includes a plurality of first electrodes, a plurality of second electrodes, a first carrier selective layer, a second carrier selective layer, and a light-absorbing active layer. The second electrodes are disposed on one side of the first electrodes. Between the first electrodes and the second electrodes, a first carrier selective layer, a light-absorbing active layer and a second carrier selective layer are disposed. The light detecting module includes the light detecting array structure and a control unit. The control unit is coupled to the first electrodes and second electrodes, selectively provides at least two cross voltages between each of the first electrodes and each of the second electrodes, and reads photocurrents flowing through the first electrodes and second electrodes.

Abstract: Photodiode arrays and methods of fabrication are provided. One photodiode array includes a silicon wafer having a first surface and an opposite second surface and a plurality of conductive vias through the silicon wafer. The photodiode array further includes a patterned doped epitaxial layer on the first surface, wherein the patterned doped epitaxial layer and the substrate form a plurality of diode junctions. A patterned etching defines an array of the diode junctions.

Abstract: A method for producing a semiconductor device includes a step of forming a conductor layer and a first semiconductor layer containing a donor impurity or an acceptor impurity on a first semiconductor substrate; a step of forming a second insulating layer so as to cover the first semiconductor layer; a step of thinning the first semiconductor substrate to a predetermined thickness; a step of forming, from the first semiconductor substrate, a pillar-shaped semiconductor having a pillar-shaped structure on the first semiconductor layer; a step of forming a first semiconductor region in the pillar-shaped semiconductor by diffusing the impurity from the first semiconductor layer; and a step of forming a pixel of a solid-state imaging device with the pillar-shaped semiconductor into which the impurity has been diffused.

Abstract: An image sensor includes a plurality of pixels, wherein each of the pixels includes a storage unit configured to electrically connect with a floating diffusion region and store photocharges therein, and a selector configured to selectively connect and disconnect the storage unit to and from the floating diffusion region in accordance with selection signals. The storage unit includes a capacitive element electrically connected to the floating diffusion region. The selector includes a switching element for selecting the pixel for connection to the floating diffusion region. The switching element is operated by the selection signals to selectively drive the capacitive element.

Abstract: A solid state imaging device having a light sensing section that performs photoelectric conversion of incident light includes: an insulating layer formed on a light receiving surface of the light sensing section; a layer having negative electric charges formed on the insulating layer; and a hole accumulation layer formed on the light receiving surface of the light sensing section.

Abstract: An isolation area that provides additional active area between semiconductor devices on an integrated circuit is described. In one embodiment, the invention includes a complementary metal oxide semiconductor transistor of an image sensor having a source, a drain, and a gate between the source and the drain, the transistor having a channel to couple the source and the drain under the influence of the gate, and an isolation barrier surrounding a periphery of the source and the drain to isolate the source and the drain from other devices, wherein the isolation barrier is distanced from the central portion of the channel.

Abstract: An image sensor includes a plurality of unit pixels. Each unit pixel has a photo diode for sensing external light to generate photo charges. A transfer transistor is connected to the photo diode for storing the photo charges generated in the photo diode into a floating diffusion region when being turned-on. An amplification transistor amplifies the photo charges stored into the floating diffusion region. A select transistor, connected to the amplification transistor, performs a switching operation. An output line, extended in a column direction, outputs the photo charges in accordance with the switching operation of the select transistor. The photo diode may be formed in such a manner to share the output line with its adjacent photo diode in a horizontal direction, so that the photo charges generated in the photo diode and its adjacent photo diode are outputted through the output line.

Abstract: A system and method for image sensing is disclosed. An embodiment comprises a substrate with a pixel region, the substrate having a front side and a backside. A co-implant process is performed along the backside of the substrate opposing a photosensitive element positioned along the front side of the substrate. The co-implant process utilizes a first pre-amorphization implant process that creates a pre-amorphization region. A dopant is then implanted wherein the pre-amorphization region retards or reduces the diffusion or tailing of the dopants into the photosensitive region. An anti-reflective layer, a color filter, and a microlens may also be formed over the co-implant region.

Abstract: An image sensor pixel suitable for use in a back-side-illuminated or a front-side-illuminated sensor arrangement is provided. The image sensor pixel may be a small size pixel that includes a source follower implemented using a vertical junction field effect (JFET) transistor. The vertical JFET source follower may be integrated directly into the floating diffusion node, thereby eliminating excess metal routing and pixel area typically allocated for the source follower in conventional pixel configurations. Pixel area may instead be allocated for increasing the charge storage capacity of the photodiode or can be used to reduce pixel size while maintaining pixel performance. Using a vertical junction field effect transistor in this way simplifies pixel addressing operations and minimizes random telegraph signal (RTS) noise associated with small size metal-oxide-semiconductor (MOS) transistors.

Abstract: A method for fabricating a complementary metal-oxide semiconductor (CMOS) image sensor includes providing a semi-finished substrate, forming a patterned blocking layer over a photodiode region of the substrate, implanting impurities on regions other than the photodiode region using a mask while the patterned blocking layer remains, and removing the mask.

Abstract: A semiconductor device for performing photoelectric conversion of incident light includes a substrate and a well region having different conductivity types. A depletion layer is generated in a vicinity of a junction interface between the substrate and the well region. A first trench has a depth equal to a height up to a top portion of the depletion layer generated on a bottom side of the well region and a width extending to a heavily doped region formed in the well region. A second trench has a depth larger than that of a portion of the depletion layer generated on the bottom side of the well region and a width larger than that of portions of the depletion layer generated on the sides of the well region. The second trench surrounds the first trench so as to confine the depletion layer under the first trench except for a region thereof under the heavily doped region. An insulator is buried into each the first trench and the second trench.

Abstract: A solid state imaging device including a semiconductor layer comprising a plurality of photodiodes, a first antireflection film located over a first surface of the semiconductor layer, a second antireflection film located over the first antireflection film, a light shielding layer having side surfaces which are adjacent to at least one of first and the second antireflection film.

Abstract: Provided is a semiconductor image sensor device. The image sensor device includes a substrate. The image sensor device includes a first pixel and a second pixel disposed in the substrate. The first and second pixels are neighboring pixels. The image sensor device includes an isolation structure disposed in the substrate and between the first and second pixels. The image sensor device includes a doped isolation device disposed in the substrate and between the first and second pixels. The doped isolation device surrounds the isolation structure in a conformal manner.