Device Sensitive To Infrared, Visible, Or Ultraviolet Radiation (epo) Patents (Class 257/E31.054)
- Potential barrier being of point contact type (EPO) (Class 257/E31.056)
- PN homojunction potential barrier (EPO) (Class 257/E31.057)
- Device comprising active layer formed only by Group II-VI compound (e.g., HgCdTe IR photodiode) (EPO) (Class 257/E31.058)
- Device comprising active layer formed only by Group III-V compound (EPO) (Class 257/E31.059)
- Device comprising active layer formed only by Group IV compound (EPO) (Class 257/E31.06)
- PIN potential barrier (EPO) (Class 257/E31.061)
- Potential barrier working in avalanche mode (e.g., avalanche photodiode) (EPO) (Class 257/E31.063)
- Schottky potential barrier (EPO) (Class 257/E31.065)
- PN heterojunction potential barrier (EPO) (Class 257/E31.067)