Abstract: A method of manufacturing MEMS housings includes: providing glass spacers; providing a window plate; attaching the window plate to the glass spacers; aligning the glass spacers with a device glass plate having MEMS devices thereon; bonding the glass spacers to the device glass plate; and singulating the glass spacers, window plate, and device glass plate to produce the MEMS housings.

Abstract: A method of repairing a solar cell bonded on a substrate, by bonding a replacement solar cell on top of an existing solar cell, without removing the existing solar cell. The substrate may comprise a flexible circuit, printed circuit board, flex blanket, or solar cell panel. The bonding of the replacement solar cell on top of the existing solar cell uses a controlled adhesive pattern. Electrical connections for the existing solar cell and the replacement solar cell are made using electrical conductors on, above or embedded within the substrate. The electrical connections may extend underneath the replacement solar cell. The method further comprises removing interconnects for the electrical connections for the existing solar cell, and then welding or soldering interconnects for the electrical connections for the replacement solar cell.

Abstract: There is provided a stacked lens structure including a first lens substrate having a first through-hole and a second lens substrate having a second-through hole. The first lens substrate may be directly bonded to the second lens substrate. The stacked lens structure may include lens resin portions, where each lens resin portion includes a lens portion configured to refract light, and a support portion configured to support the lens portion at a corresponding lens substrate, the support portion including a first portion at a side of the lens substrate, a second portion, and a third portion, where the first portion is between the lens substrate and the second portion in a cross-section view, and the third portion is between the second portion and the lens portion in the cross-section view.

Abstract: A camera has a lens mount and an image sensor for sensing images. A holder of the camera can captively hold the image sensor such that the image sensor is moveable relative to the lens mount when the image sensor is not attached to the holder. The holder is further operable to fixedly hold the image sensor such that the image sensor is unmoveable relative to the lens mount at an aligned position of the image sensor when the image sensor is attached to the holder. The image sensor may be attached to a printed circuit board. The holder may include first and second rails comprising first and second printed circuit boards, respectively. The holder is then operable to fixedly hold the image sensor by the printed circuit board being soldered to at least one of the first and second printed circuit boards.

Abstract: The present disclosure relates to an imaging device, an image processing apparatus, and an image processing method by which the versatility of an imaging device is improved. The imaging device includes a semiconductor substrate, a plurality of directive pixel output units formed on the semiconductor substrate and having a configuration for receiving incident light from an imaging target entering without intervention of any of an imaging lens and a pinhole, the configuration being operable to independently set an incident angle directivity indicative of a directivity to an incident angle of the incident light, and a plurality of non-directive pixel output units formed on the semiconductor substrate and having no configuration for providing the incident angle directivity. The present disclosure can be applied, for example, to imaging apparatus.

Abstract: The near-infrared photodetector semiconductor device comprises a semiconductor layer (1) of a first type of conductivity with a main surface (10), a trench or a plurality of trenches (2) in the semiconductor layer at the main surface, a SiGe alloy layer (3) in the trench or the plurality of trenches, and an electrically conductive filling material of a second type of conductivity in the trench or the plurality of trenches, the second type of conductivity being opposite to the first type of conductivity.

Abstract: The present disclosure discloses a pre-stretched substrate, a method for manufacturing the same, an electronic device and a method for manufacturing the same. The method for manufacturing a pre-stretched substrate includes: sequentially forming at least two film layers on a carrier plate at a temperature higher than a first temperature threshold; wherein thermal expansion coefficients of the at least two film layers are different; and separating the at least two film layers from the carrier plate, thereby obtaining the pre-stretched substrate. The at least two film layers have different degrees of contraction in a normal temperature environment.

Abstract: The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.

Abstract: An electrical assembly having an electrical device electrically connected to a multilayer bus board, which has a multilayer stacked assembly that includes a plurality of electrically conductive layer structures and at least one dielectric layer structure disposed between an adjacent pair of the conductive layer structures. A frame formed of a dielectric material encapsulates at least a portion of the multilayer stacked assembly and mechanically maintains the conductive layer structures and the dielectric layer structure in secure aligned abutting relation.

Abstract: A photovoltaic module is disclosed. The photovoltaic module comprises an array of shingled tiles disposed between a transparent front substrate and a back substrate, wherein the array of shingled tiles comprises a plurality of photovoltaic tiles in electrically contact with each other and positioned in overlapping rows. Each photovoltaic tile comprises a front metallic contact layer disposed on an epitaxial film stack disposed on a back metallic contact layer disposed on a support carrier layer. The photovoltaic module includes at least one busbar in electrical contact with the array of shingled tiles and disposed between the front and back glass substrates. The photovoltaic module also includes an encapsulation layer between the front and back glass substrates.

Abstract: A CMOS image sensor may include a first semiconductor chip including an array of image sensor pixels and readout circuitry electrically connected thereto, and a second semiconductor chip coupled to the first semiconductor chip in a stack and including image processing circuitry electrically connected to the readout circuitry. The readout circuitry may include a plurality of transistors each including spaced apart source and drain regions, a superlattice channel extending between the source and drain regions, and a gate including a gate insulating layer on the superlattice channel and a gate electrode on the gate insulating layer.

Abstract: A fan-out sensor package includes: a sensor chip having a first connection pads and an optical layer; an encapsulant encapsulating at least portions of the sensor chip; a connection member disposed on the sensor chip and the encapsulant and including a redistribution layer electrically connected to the first connection pads; through-wirings penetrating through the encapsulant and electrically connected to the redistribution layer; and electrical connection structures disposed on the other surface of the encapsulant opposing one surface of the encapsulant on which the connection member is disposed and electrically connected to the through-wirings, wherein the sensor chip and the connection member are physically spaced apart from each other by a predetermined distance, and the first connection pads and the redistribution layer are electrically connected to each other through first connectors disposed between the sensor chip and the connection member.

Abstract: A manufacturing method of an image-sensing module includes following steps. A substrate is provided. At least one photosensitive chip is disposed on the substrate, and each of the at least one photosensitive chip has an active area. At least one protection layer covers the at least one active area of the at least one photosensitive chip. A first manufacturing process is performed, and dust is generated during the first manufacturing process. The at least one protection layer is suitable for isolating the dust from the at least one active area. The at least one protection layer is removed to expose the at least one active area.

Abstract: A semiconductor structure includes a substrate including a first side and a second side disposed opposite to the first side and configured to receive an electromagnetic radiation, a barrier layer disposed over the second side of the substrate, a color filter disposed over the barrier layer, and a grid surrounding the color filter and disposed over the barrier layer, wherein the barrier layer is configured to absorb or reflect non-visible light in the electromagnetic radiation, and the barrier layer is disposed between the grid and the substrate.

Abstract: Optoelectronic modules include overmolds that support an optical assembly and, in some case, protect wiring providing electrical connections between an image sensor and a printed circuit board (PCB) or other substrate. The disclosure also describes wafer-level fabrication methods for making the modules.

Abstract: Various structures of image sensors are disclosed, as well as methods of forming the image sensors. According to an embodiment, a structure comprises a substrate comprising photo diodes, an oxide layer on the substrate, recesses in the oxide layer and corresponding to the photo diodes, a reflective guide material on a sidewall of each of the recesses, and color filters each being disposed in a respective one of the recesses. The oxide layer and the reflective guide material form a grid among the color filters, and at least a portion of the oxide layer and a portion of the reflective guide material are disposed between neighboring color filters.

Abstract: Among other things, one or more image sensors and techniques for forming such image sensors are provided. An image sensor comprises a photodiode array configured to detect light. The image sensor comprises a calibration region configured to detect a color level for image reproduction, such as a black calibration region configured to detect a black level for an image detected by the photodiode array. The image sensor comprises a dielectric film that is formed over the photodiode array and the calibration region. The dielectric film is configured to balance stress between the photodiode and the calibration region in order to improve accuracy of the calibration region.

Abstract: An image sensor wafer may be stacked on top of a digital signal processor (DSP) wafer. The image sensor wafer may include multiple image sensor dies, whereas the DSP wafer may include multiple DSP dies. The stacked wafers may be cut along scribe line regions to dice the wafers into individual components. Each image sensor die may include through-oxide vias (TOVs) that extend at least partially into a corresponding DSP die. Scribe line support structures may be formed surrounding the scribe line regions. The scribe line support structures and the TOVs may be formed during the same processing step. The TOVs can also be formed through deep trench isolation structures.

Abstract: Embodiments provide a horizontally movable stage, with an opening, of a flip-chip bonder, a substrate including at least one flexible portion and a waveguide, the waveguide exposed at one end edge of the substrate positioned upon the stage with the end edge over the opening, a vertically upwardly movable clamp sized to penetrate the stage opening and positioned underneath the stage, a vertically downwardly movable bond head above the stage opening, an optical component positioned in the head, a glue dispenser positioned to provide glue to either a mating surface of the substrate exposed end edge or a mating surface of the optical component, and a controller connected to the stage, clamp, head and dispenser, including a control circuit for positioning the substrate waveguide exposed end edge underneath the optical component while dispensing glue for fixably bonding the mating surfaces of the optical component and the substrate exposed end edge.

Abstract: An optical component is fixed precisely on a sensor chip. After a sensor chip including a front surface having a sensor plane with a plurality of light receiving elements is mounted face-up over a wiring substrate, an adhesive is disposed on the front surface of the sensor chip at a plurality of positions, and a plurality of spacers having adherence is formed by curing this adhesive. Then, an adhesive paste is disposed on the front surface of the sensor chip. Then, an optical component held by a bonding tool is disposed on the front surface via the spacer and the adhesive. After that, the bonding tool is separated from the optical component and the optical component is fixed by curing the adhesive in a state in which a load is not applied to the optical component.

Abstract: There is provided a solid-state image sensor including a semiconductor substrate in which a plurality of pixels are arranged, and a wiring layer stacked on the semiconductor substrate and formed in such a manner that a plurality of conductor layers having a plurality of wirings are buried in an insulation film. In the wiring layer, wirings connected to the pixels are formed of two conductor layers.

Abstract: A method for manufacturing a backside illuminated color image sensor includes (a) modifying the frontside of an image sensor wafer, having pixel arrays, to produce electrical connections to the pixel arrays, wherein the electrical connections extend depth-wise into the image sensor wafer from the frontside, and (b) modifying the backside of the image sensor wafer to expose the electrical connections.

Abstract: A method for reducing the tilt of an optical unit during manufacture of an image sensor includes the steps of: providing a semimanufacture of the image sensor, carrying out a preheating process, carrying out an adhesive application process, carrying out an optical unit mounting process, and carrying out a packaging process. Due to the preheating process, the semimanufacture will be subjected to a stabilized process environment during the adhesive application process and the optical unit mounting process, so as for the optical unit to remain highly flat once attached to the semimanufacture. The method reduces the chances of tilt and crack of the optical unit and thereby contributes to a high yield rate.

Abstract: According to one embodiment, the optical layer has a larger planar size than the semiconductor layer. The optical layer is transmissive to emission light of the light emitting layer. The first insulating film is provided on a side surface of the semiconductor layer continued from the first surface. The metal film includes a first reflective part covering the side surface of the semiconductor layer via the first insulating film. The metal film includes a second reflective part opposed to the optical layer in a region around the side surface of the semiconductor layer and extending from the first reflective part toward a side opposite from the side surface of the semiconductor layer.

Abstract: Reliability is improved by improving adhesiveness, crack resistance, and moisture resistance of a metal member-resin jointed body by enhancing adhesiveness between the metal member and the resin. A jointed body of a metal member and a resin including: an intermediate layer and a silane coupling agent layer formed on the metal member at an interface between the metal member and the resin, wherein the silane coupling agent layer and the resin are contacted; the intermediate layer is any one of an oxide layer of the metal, a chelating agent layer, a composite layer made of the oxide layer and the chelating agent layer, and a mixed layer made of the oxide and the chelating agent; and the intermediate layer has an electrically non-insulating characteristic, and a method of manufacturing the same.

Abstract: The invention is directed to a polymer sheet and its use as part of a solar paneland glass element. The sheet comprises multiple coextruded polymer layers, wherein at least two or more layers of the polymer sheet comprise a luminescence downshifting compound for at least partially absorbing radiation having a certain wavelength and re-emitting radiation at a longer wavelength than the wavelength of the absorbed radiation, and wherein a luminescence downshifting compound in a first polymer layer can absorb more radiation at a lower wavelength than the luminescence downshifting compound present in a next layer.

Abstract: A process for manufacturing a photonic circuit comprises: manufacturing on a first wafer a first layer stack comprising an underclad oxide layer and a high refractive index waveguide layer; patterning the high refractive index waveguide layer to generate a passive photonic structures; planarizing the first layer stack with a planarizing oxide layer having a thickness below 300 nanometers above the high refractive index waveguide layer; annealing the patterned high refractive index waveguide layer before and/or after the planarizing oxide layer; manufacturing on a second wafer a second layer stack comprising a detachable mono-crystalline silicon waveguide layer; transferring and bonding the first layer stack and the second layer stack; manufacturing active photonic devices in the mono-crystalline silicon waveguide layer; and realizing evanescent coupling between the mono-crystalline silicon waveguide layer and the high refractive index waveguide layer.

Abstract: An approach is provided for forming a light coupling in a waveguide layer. The approach involves forming a waveguide layer overlaying an upper surface of a substrate. The approach also involves placing a chip package portion within the waveguide layer in a selected position. The approach further involves forming a molding compound layer overlaying the waveguide layer and the chip package portion. The approach additionally involves curing the molding compound layer to form a cured package. The approach also involves releasing the cured package from the substrate and inverting the cured package. The approach further involves forming a ridge waveguide structure in the waveguide layer by removing a portion of the lower surface of the cured package.

Abstract: An optical spectroscopy device includes a first cladding layer is positioned over a photodetector. An optical core region is over the first cladding layer where the optical core region is configured to receive a light beam. The optical core region includes a first grating having a first pitch where the first pitch is positioned to direct a first wavelength of the light beam to a first portion of the photodetector. The optical core region further includes a second grating having a second pitch where the second grating is positioned to direct a second wavelength of the light beam to a second portion of the photodetector. The first pitch is different from the second pitch, the first wavelength is different from the second wavelength, and the first portion of the photodetector is different from the second portion of the photodetector. Additionally, a second cladding layer is over the optical core region.

Abstract: Solid-state radiation transducer (SSRT) devices and methods of manufacturing and using SSRT devices are disclosed herein. One embodiment of the SSRT device includes a radiation transducer (e.g., a light-emitting diode) and a transmissive support assembly including a transmissive support member, such as a transmissive support member including a converter material. A lead can be positioned at a back side of the transmissive support member. The radiation transducer can be flip-chip mounted to the transmissive support assembly. For example, a solder connection can be present between a contact of the radiation transducer and the lead of the transmissive support assembly.

Abstract: The present disclosure provides a method of semiconductor device fabrication including forming a mandrel on a semiconductor substrate is provided. The method continues to include oxidizing a region the mandrel to form an oxidized region, wherein the oxidized region abuts a sidewall of the mandrel. The mandrel is then removed from the semiconductor substrate. After removing the mandrel, the oxidized region is used to pattern an underlying layer formed on the semiconductor substrate.

Abstract: The first face of the pad is situated between the front-side face of the second semiconductor substrate and a hypothetical plane including and being parallel to the front-side face, and a second face of the pad that is a face on the opposite side of the first face is situated between the first face and the front-side face of the second semiconductor substrate, and wherein the second face is connected to the wiring structure so that the pad is electrically connected to the circuit arranged in the front-side face of the second semiconductor substrate via the wiring structure.

Abstract: A stacked body is obtained by stacking a glass plate, a transparent resin sheet, a solar cell, a colored resin sheet, and a first resin sheet in the order. The stacked body is pressed under heat to fabricate the solar cell module. The module includes the glass plate, a transparent sealing layer placed between the glass plate and the solar cell and formed of the transparent resin sheet, a colored sealing layer placed between the first resin sheet and the solar cell and formed of the colored resin sheet, and the first resin sheet. One of the transparent resin sheet and the colored resin sheet has a tan ? of 1 or higher at a temperature of the pressing, and the other one of the transparent resin sheet and the colored resin sheet has a tan ? of less than 1 at the temperature of the pressing.

Abstract: A radiation detection apparatus can have optical coupling material capable of absorbing wavelengths of light within approximately 75 nm of a wavelength of scintillating light of a scintillation member of the radiation detection apparatus. In an embodiment, the optical coupling material can be disposed between a photosensor of the radiation detection apparatus and the scintillation member. In a particular embodiment, the composition of the optical coupling material can include a dye. In an illustrative embodiment, the dye can have a corresponding a* coordinate, a corresponding b* coordinate, and an L* coordinate greater than 0. In another embodiment, the optical coupling material can be disposed along substantially all of a side of the photosensor.

Abstract: Embodiments of the present invention relate to a formulation for use in the fabrication of a light-emitting device, the formulation including a population of semiconductor nanoparticles incorporated into a plurality of discrete microbeads comprising an optically transparent medium, the nanoparticle-containing medium being embedded in a host light-emitting diode encapsulation medium. A method of preparing such a formulation is described. There is further provided a light-emitting device including a primary light source in optical communication with such a formulation and a method of fabricating the same.

Abstract: A method of making image sensor devices may include forming a sensor layer including image sensor ICs in an encapsulation material, bonding a spacer layer to the sensor layer, the spacer layer having openings therein and aligned with the image sensor ICs, and bonding a lens layer to the spacer layer, the lens layer including lens in an encapsulation material and aligned with the openings and the image sensor ICs. The method may also include dicing the bonded-together sensor, spacer and lens layers to provide the image sensor devices. Helpfully, the method may use WLP to enhance production.

Abstract: An optoelectronic component is specified. According to at least one embodiment of the invention, the optoelectronic component comprises a housing (20) and a radiation-emitting or radiation-receiving semiconductor chip (10) arranged in the housing (20). Furthermore, the component comprises an optical element (50), which contains a polymer material comprising a silicone. The silicone contains at least 40% by weight of cyclic siloxanes, and at least 40% of the silicon atoms of the cyclic siloxanes are crosslinked with a further silicon atom of the silicon via alkylene and/or alkylarylene groups.

Abstract: The invention provides a photovoltaic device and method of manufacturing the same. The photovoltaic device of the invention includes a semiconductor structure assembly and a protection layer. The semiconductor structure assembly has a plurality of side surfaces, and includes a p-n junction, an n-p junction, a p-i-n junction, an n-i-p junction, a tandem junction or a multi-junction. In particular, the protection layer is formed to overlay the sides of the semiconductor structure assembly. Thereby, the protection layer can effectively inhibit the potential-induced degradation effect of the photovoltaic device of the invention.

Abstract: A stack is obtained by stacking a glass plate, a first transparent resin sheet, a solar cell, a second transparent resin sheet, a colored resin sheet, and a first resin sheet. The stack is pressed under heat to fabricate a module including the glass plate, a first transparent bonding layer placed between the glass plate and the solar cell and formed of the first transparent resin sheet, a second transparent bonding layer placed between the first resin sheet and the solar cell and formed of the second transparent resin sheet, a colored bonding layer placed between the second transparent bonding layer and the first resin sheet and formed of the colored resin sheet, and the first resin sheet. A loss modulus of the colored resin sheet at a temperature of the pressing is higher than a loss modulus of the first transparent resin sheet at the temperature of the pressing.

Abstract: A semiconductor structure includes a module with a plurality of die regions, a plurality of light-emitting devices disposed upon the substrate so that each of the die regions includes one of the light-emitting devices, and a lens board over the module and adhered to the substrate with glue. The lens board includes a plurality of microlenses each corresponding to one of the die regions, and at each one of the die regions the glue provides an air-tight encapsulation of one of the light-emitting devices by a respective one of the microlenses. Further, phosphor is included as a part of the lens board.

Abstract: This invention relates to an X-ray sensor having flexible properties and to a method of manufacturing the same. This X-ray sensor includes an array substrate including a semiconductor layer having a light-receiving element; a scintillator panel bonded to the array substrate and including a scintillator layer; a first polymer layer attached to an outer surface of the array substrate by a first adhesive layer; a second polymer layer attached to an outer surface of the scintillator panel by a second adhesive layer; and a third adhesive layer disposed between the array substrate and the scintillator panel so as to attach the array substrate and the scintillator panel to each other.

Abstract: A method comprises implanting ions in a substrate to form a plurality of photo diodes, forming an interconnect layer over a first side of the substrate and applying a first halogen treatment process to a second side of the substrate and forming a first silicon-halogen compound layer over the second side of the substrate as a result of applying the first halogen treatment process.

Abstract: A disclosed optical semiconductor element includes: a semiconductor substrate having a first main surface and a second main surface in which a plurality of first grooves are formed; a first optical waveguide defined by portions of the semiconductor substrate between the first grooves and having side faces defined by the first grooves; and a photoelectric converter configured to transmit or receive an optical signal propagating through the first optical waveguide. Moreover, the first grooves define part of a guide hole.

Abstract: This solar cell has: a substrate having a board-like base, and a first conductive line and a second conductive line, which are disposed on the board-like base; a plurality of multi-junction solar cells, each of which has a lower electrode bonded on and electrically connected to the first conductive line, a cell laminate, which is disposed on the lower electrode, and which includes a bottom cell layer and a top cell layer, a transparent electrode disposed on the upper surface of the top cell layer, and a conductor that connects the transparent electrode to the second conductive line; a glass plate, which has upper portions of the transparent electrodes of the multi-junction solar cells bonded to one surface thereof using an adhesive; and collecting lens, which is disposed on the other glass plate surface with a transparent adhesive therebetween.

Abstract: Technologies are generally described for manufacturing an optical device by attaching a light-emitting element to an optical element through a resin. In various examples, a method is described, where a substrate is provided to have a through-hole at a position in the substrate where an optical element is to be mounted. A resin in liquid state may be injected into the through-hole in the substrate. Further, an optical element having a light-emitting portion may be mounted on the substrate such that a center of the tight-emitting portion is self-aligned with a center of the through-hole due to a surface tension of the resin in liquid state. The resin may be cured such that the optical element is fixed to the substrate.

Abstract: A method for forming a semiconductor device includes providing a wafer having a plurality of chip regions, in which each chip region includes a sensing array on a front side of the wafer. A plurality of through silicon vias is formed in the wafer from a back side of the wafer, in which the plurality of through silicon vias is electrically connected to the plurality of sensing arrays. A filter layer is formed on the plurality of sensing arrays after the plurality of through silicon vias is formed. A cover plate is attached to the front side of the wafer to cover the filter layer.

Abstract: A method for producing an infrared light detector (1) has the steps of: providing a plurality of connection pins (11, 12), which are kept parallel to one another and arranged with one of the longitudinal ends (17, 18) thereof in a horizontal plane, and a printed circuit board (6) with a planar underside (8), in which a recess (15, 16) of the same form in each case is provided for each of the connection pins (11, 12); filling the recesses (15, 16) with a solder paste, so that in each of the recesses (15, 16) there is a solder paste body (21) with the same amount of solder paste; positioning the printed circuit board (6) over the connection pins (11, 12), so that each of the connection pins (11, 12) extends with its longitudinal end (17, 18) in the recess (15, 16) assigned to it and dips in the solder paste body (21) located in the respective recess (15, 16); liquefying the solder paste bodies (21), so that electrically conducting connections are formed between the connection pins (11, 12) and the solder paste

Abstract: A method for manufacturing a spectroscopic sensor 1 comprises a first step of forming a cavity layer 21 by etching a surface layer disposed on a handle substrate, a second step of forming a first mirror layer 22 on the cavity layer 21 after the first step, a third step of joining a light-transmitting substrate 3 onto the first mirror layer 22 after the second step, a fourth step of removing the handle substrate from the cavity layer 21 after the third step, a fifth step of forming a second mirror layer 23 on the cavity layer 21 devoid of the handle substrate after the fourth step, and a sixth step of joining a light-detecting substrate 4 onto the second mirror layer after the fifth step.

Abstract: An optical communication module includes an optical semiconductor element. The element includes an optical functional region having a light receiving function or a light emitting function, a first transmission layer transmissive to light emitted from the optical functional region or light received by the optical functional region, and a wiring layer stacked on the first transmission layer and constituting a conduction path to the optical functional region. The communication module also includes a second transmission layer transmissive to the light and disposed to cover the optical semiconductor element, and a first resin member stacked on the second transmission layer. The communication module is formed with a fixing hole for fixing an optical fiber. The fixing hole includes a bottom face provided by the second transmission layer, and an opening formed in an outer surface of the first resin member.

Abstract: A semiconductor package includes a light transmissive cover having a conductive pattern, a substrate having a cavity, a semiconductor chip in the cavity of the substrate and electrically connected to the conductive pattern arranged on the light transmissive cover, and a blocking pattern between the light transmissive cover and the substrate.