Semiconductor Device Manufacturing: Process Patents (Class 438)
- Having diverse electrical device (Class 438/23)
- Packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor (Class 438/26)
- Including integrally formed optical element (e.g., reflective layer, luminescent material, contoured surface, etc.) (Class 438/29)
- Substrate dicing (Class 438/33)
- Making emissive array (Class 438/34)
- Ordered or disordered (Class 438/36)
- Graded composition (Class 438/37)
- Passivating of surface (Class 438/38)
- Mesa formation (Class 438/39)
- Groove formation (Class 438/42)
- Dopant introduction into semiconductor region (Class 438/45)
- Compound semiconductor (Class 438/46)
- Assembly of plural semiconductive substrates each possessing electrical device (Class 438/107)
- Making plural separate devices (Class 438/110)
- Including contaminant removal or mitigation (Class 438/115)
- Having light transmissive window (Class 438/116)
- Incorporating resilient component (e.g., spring, etc.) (Class 438/117)
- Including adhesive bonding step (Class 438/118)
- With vibration step (Class 438/120)
- Metallic housing or support (Class 438/121)
- Insulative housing or support (Class 438/125)
- Encapsulating (Class 438/127)
- Gettering of semiconductor substrate (Class 438/143)
- Charge transfer device (e.g., CCD, etc.) (Class 438/144)
- On insulating substrate or layer (e.g., TFT, etc.) (Class 438/149)
- Having Schottky gate (e.g., MESFET, HEMT, etc.) (Class 438/167)
- Having junction gate (e.g., JFET, SIT, etc.) (Class 438/186)
- Having insulated gate (e.g., IGFET, MISFET, MOSFET, etc.) (Class 438/197)
- Gettering of semiconductor substrate (Class 438/310)
- On insulating substrate or layer (i.e., SOI type) (Class 438/311)
- Having heterojunction (Class 438/312)
- Complementary bipolar transistors (Class 438/322)
- Including diode (Class 438/328)
- Including passive device (e.g., resistor, capacitor, etc.) (Class 438/329)
- Having fuse or integral short (Class 438/333)
- Forming inverted transistor structure (Class 438/334)
- Forming lateral transistor structure (Class 438/335)
- Making plural bipolar transistors of differing electrical characteristics (Class 438/340)
- Using epitaxial lateral overgrowth (Class 438/341)
- Having multiple emitter or collector structure (Class 438/342)
- Mesa or stacked emitter (Class 438/343)
- Washed emitter (Class 438/344)
- Walled emitter (Class 438/345)
- Emitter dip prevention or utilization (Class 438/346)
- Permeable or metal base (Class 438/347)
- Sidewall base contact (Class 438/348)
- Pedestal base (Class 438/349)
- Forming base region of specified dopant concentration profile (e.g., inactive base region more heavily doped than active base region, etc.) (Class 438/350)
- Direct application of electrical current (Class 438/351)
- Fusion or solidification of semiconductor region (Class 438/352)
- Including isolation structure (Class 438/353)
- Self-aligned (Class 438/364)
- Radiation or energy treatment modifying properties of semiconductor regions of substrate (e.g., thermal, corpuscular, electromagnetic, etc.) (Class 438/378)
- Having substrate registration feature (e.g., alignment mark) (Class 438/401)
- And gettering of substrate (Class 438/402)
- Having semi-insulating component (Class 438/403)
- Total dielectric isolation (Class 438/404)
- Isolation by PN junction only (Class 438/414)
- Having air-gap dielectric (e.g., groove, etc.) (Class 438/421)
- Implanting to form insulator (Class 438/423)
- Grooved and refilled with deposited dielectric material (Class 438/424)
- Recessed oxide by localized oxidation (i.e., LOCOS) (Class 438/439)
- Field plate electrode (Class 438/454)
- Beam lead formation (Class 438/461)
- Having specified scribe region structure (e.g., alignment mark, plural grooves, etc.) (Class 438/462)
- By electromagnetic irradiation (e.g., electron, laser, etc.) (Class 438/463)
- With attachment to temporary support or carrier (Class 438/464)
- Having a perfecting coating (Class 438/465)
- On insulating substrate or layer (Class 438/479)
- Amorphous semiconductor (Class 438/482)
- Polycrystalline semiconductor (Class 438/488)
- Fluid growth step with preceding and subsequent diverse operation (Class 438/492)
- Plural fluid growth steps with intervening diverse operation (Class 438/493)
- Fluid growth from liquid combined with preceding diverse operation (Class 438/497)
- Fluid growth from liquid combined with subsequent diverse operation (Class 438/500)
- Fluid growth from gaseous state combined with preceding diverse operation (Class 438/503)
- Fluid growth from gaseous state combined with subsequent diverse operation (Class 438/507)
- Ordering or disordering (Class 438/511)
- Involving nuclear transmutation doping (Class 438/512)
- Plasma (e.g., glow discharge, etc.) (Class 438/513)
- Ion implantation of dopant into semiconductor region (Class 438/514)
- By application of corpuscular or electromagnetic radiation (e.g., electron, laser, etc.) (Class 438/535)
- Fusing dopant with substrate (i.e., alloy junction) (Class 438/537)
- Diffusing a dopant (Class 438/542)
- Combined with formation of ohmic contact to semiconductor region (Class 438/571)
- Compound semiconductor (Class 438/572)
- Using platinum group metal (i.e., platinum (Pt), palladium (Pd), rhodium (Rh), ruthenium (Ru), iridium (Ir), osmium (Os), or alloy thereof) (Class 438/580)
- Using refractory group metal (i.e., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), or alloy thereof) (Class 438/582)
- Combined with the removal of material by nonchemical means (e.g., ablating, abrading, etc.) (Class 438/690)
- Combined with coating step (Class 438/694)
- Having liquid and vapor etching steps (Class 438/704)
- Altering etchability of substrate region by compositional or crystalline modification (Class 438/705)
- Vapor phase etching (i.e., dry etching) (Class 438/706)
- Liquid phase etching (Class 438/745)
- Combined with the removal of material by nonchemical means (Class 438/759)
- Utilizing reflow (e.g., planarization, etc.) (Class 438/760)
- Multiple layers (Class 438/761)
- Formation of semi-insulative polycrystalline silicon (Class 438/764)
- By reaction with substrate (Class 438/765)
- Insulative material deposited upon semiconductive substrate (Class 438/778)
Cross-Reference Art Collections
- Amphoteric doping (Class 438/915)
- Autodoping control or utilization (Class 438/916)
- Deep level dopants (e.g., gold (Au), chromium (Cr), iron (Fe), nickel (Ni), etc.) (Class 438/917)
- Special or nonstandard dopant (Class 438/918)
- Compensation doping (Class 438/919)
- Controlling diffusion profile by oxidation (Class 438/920)
- Nonselective diffusion (Class 438/921)
- Diffusion along grain boundaries (Class 438/922)
- Diffusion through a layer (Class 438/923)
- To facilitate selective etching (Class 438/924)
- Fluid growth doping control (e.g., delta doping, etc.) (Class 438/925)
Foreign Patent Art Collections
Foreign Patent Art Collections
- Using energy beam to introduce dopant or modify dopant distribution (437/ 16) (Class 438/FOR150)
- Making assemblies of plural individual devices having community feature, e.g., integrated circuit, electrical connection, etc. (437/51) (Class 438/FOR211)
- Including isolation step (437/61) (Class 438/FOR221)
- Shadow masking (437/80) (Class 438/FOR240)
- Doping during fluid growth of semiconductor material on substrate (437/81) (Class 438/FOR241)
- By fusing dopant with substrate, e.g., alloying, etc. (437/134) (Class 438/FOR294)
- Diffusing a dopant (437/141) (Class 438/FOR301)
- On semiconductor compound (437/176) (Class 438/FOR336)
- Using platinum group silicide, i.e., silicide of Pt (Platinum), Pd (Palladium), Rh (Rhodium), Ru (Ruthenium), Ir (Iridium), Os (Osmium) (437/178) (Class 438/FOR338)
- Using metal, i.e., Pt (Platinum), Pd (Palladium), Rh (Rhodium), Ru (Ruthenium), Ir (Iridium), Os (Osmium), Au (Gold), Ag (Silver) (437/179) (Class 438/FOR339)
- Forming transparent electrode (437/181) (Class 438/FOR341)
- Forming beam electrode (437/182) (Class 438/FOR342)
- Forming bump electrode (437/183) (Class 438/FOR343)
- Electrode formed on substrate composed of elements of Group III and Group V semiconductor compound (437/184) (Class 438/FOR344)
- Electrode formed on substrate composed of elements of Group II and Group VI semiconductor compound (437/185) (Class 438/FOR345)
- Single polycrystalline electrode layer on substrate (437/186) (Class 438/FOR346)
- Single metal layer electrode on substrate (437/187) (Class 438/FOR347)
- Forming plural layered electrode (437/189) (Class 438/FOR349)
- Forming electrode of alloy or electrode of a compound of Si (Silicon) (437/196) (Class 438/FOR356)
- Depositing electrode in preformed recess in substrate (437/203) (Class 438/FOR363)
- Including positioning of point contact (437/204) (Class 438/FOR364)
- Making plural devices (437/205) (Class 438/FOR365)
- Securing completed semiconductor to mounting, housing or external lead (437/209) (Class 438/FOR369)
- Substrate dicing (437/226) (Class 438/FOR386)
- Coating and etching (437/228) (Class 438/FOR388)
- Of radiation resist layer (437/229) (Class 438/FOR389)
- By immersion metal plating from solution, i.e., electroless plating (437/230) (Class 438/FOR390)
- By spinning (437/231) (Class 438/FOR391)
- Elemental Se (Selenium) substrate or coating (437/232) (Class 438/FOR392)
- Of polycrystalline semiconductor material on substrate (437/233) (Class 438/FOR393)
- Of a dielectric or insulative material (437/235) (Class 438/FOR395)
- Comprising metal layer (437/245) (Class 438/FOR405)
Making metal semiconductor field effect transistor (mesfet) device only (437/912) (Class 438/FOR423)
