Light Responsive Or Combined With Light Responsive Device Patents (Class 257/290)
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Patent number: 9986190Abstract: Provided is an imaging apparatus, including: a photoelectric conversion element; an amplifier transistor configured to output a voltage corresponding to electric charges generated by the photoelectric conversion element; a load transistor configured to supply a bias current to the amplifier transistor; and a voltage supply unit configured to input one of a first voltage and a second voltage, which have different voltage values, to a control node of the load transistor via an input capacitor. In the imaging apparatus, a current value of the bias current to be supplied by the load transistor at a time when the second voltage is input to the control node via the input capacitor is larger than a current value of the bias current to be supplied by the load transistor at a time when the first voltage is input to the control node via the input capacitor.Type: GrantFiled: April 30, 2015Date of Patent: May 29, 2018Assignee: CANON KABUSHIKI KAISHAInventor: Takamasa Sakuragi
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Patent number: 9946132Abstract: An array substrate and a liquid crystal display panel including the array substrate are provided. The array substrate includes: multiple pixel units; at least one additional functional area located in each row of a matrix formed by the multiple pixel units, where the additional functional area is provided with a gate signal detecting transistor; and a detection signal output line and a preset signal line connected with each other. By detecting whether a drive signal on a gate line is normal using the gate signal detecting transistor, the problem of manually detecting one-by one whether a signal on a gate line is normal can be avoided, thereby improving the detection efficiency and accuracy.Type: GrantFiled: April 12, 2017Date of Patent: April 17, 2018Assignees: SHANGHAI TIANMA MICRO-ELECTRONICS CO., LTD., TIANMA MICRO-ELECTRONICS CO., LTD.Inventors: Zhaokeng Cao, Dandan Qin, Tingting Cui
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Patent number: 9905601Abstract: Some embodiments of the present disclosure provide an image sensor. The image sensor includes a pixel sensor array including a plurality of photosensors arranged in a semiconductor substrate. Peripheral circuitry is arranged in or on the semiconductor substrate and is spaced apart from the pixel sensor array. A protection ring circumscribes an outer perimeter of the pixel sensor array and separates the pixel sensor array from the peripheral circuitry. The protection ring has an annular width of greater than 20 microns. The protection ring includes a first ring in the substrate neighboring the pixel sensor array, a second ring circumscribing the first ring and meeting the first ring at a first p-n junction, and a third ring circumscribing the second ring and meeting the second ring at a second p-n junction.Type: GrantFiled: January 24, 2017Date of Patent: February 27, 2018Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Tsung-Han Tsai, Chun-Hao Chou, Kuo-Cheng Lee, Yung-Lung Hsu, Yun-Wei Cheng
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Patent number: 9905608Abstract: In electron multiplying charge coupled device (EMCCD) image sensors, electron traps in the dielectric stack underneath charge multiplication electrodes may cause undesirable gain ageing. To reduce the gain ageing drift effect, a dielectric stack may be formed that does not include electron traps in regions underneath charge multiplication electrodes. To accomplish this, silicon nitride in the dielectric stack may be removed in regions underneath the charge multiplication electrodes. The EMCCD image sensors can thus be fabricated with a stable charge carrier multiplication gain during their operational lifetime.Type: GrantFiled: January 11, 2017Date of Patent: February 27, 2018Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Jaroslav Hynecek, Eric Stevens, Christopher Parks, Stephen Kosman
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Patent number: 9899484Abstract: A transistor device includes a field plate extending from a source contact layer and defining an opening above a gate metal layer. Coplanar with the source contact layer, the field plate is positioned close to the channel region, which helps reduce its parasitic capacitance. Meanwhile, the opening allows a gate runner layer above the field plate to access and connect to the gate metal layer, which helps reduce the resistance of the gate structure. By vertically overlapping the metal gate layer, the field plate, and the gate runner layer, the transistor device may achieve fast switching performance without incurring any size penalty.Type: GrantFiled: December 30, 2016Date of Patent: February 20, 2018Assignee: TEXAS INSTRUMENTS INCORPORATEDInventors: Hiroyuki Tomomatsu, Hiroshi Yamasaki, Sameer Pendharkar
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Patent number: 9881960Abstract: Each unit pixel includes a photoelectric converter, an n-type impurity region forming an accumulation diode together with the semiconductor region, the accumulation diode accumulating a signal charge generated by the photoelectric converter, an amplifier transistor including a gate electrode electrically connected to the impurity region, and an isolation region formed around the amplifier transistor and implanted with p-type impurities. The amplifier transistor includes an n-type source/drain region formed between the gate electrode and the isolation region, and a channel region formed under the gate electrode. A gap in the isolation region is, in a gate width direction, wider at a portion including the channel region than at a portion including the source/drain region.Type: GrantFiled: November 28, 2014Date of Patent: January 30, 2018Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.Inventors: Yoshihiro Sato, Ryohei Miyagawa, Tokuhiko Tamaki, Junji Hirase, Yoshiyuki Ohmori, Yoshiyuki Matsunaga
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Patent number: 9869711Abstract: A method for evaluating the performance of a plasma transistor comprises: setting a plasma wave velocity, which is adjusted by a gate overdrive voltage, as a first axis; setting an electronic drift velocity, which is adjusted by a drain-to-source voltage, as a second axis; setting a channel length as a third axis; and checking whether the plasma wave transistor is operated as a terahertz emitter according to a change in the performance parameter value of the plasma wave transistor on the basis of a relational expression among the first axis, the second axis, and the third axis.Type: GrantFiled: May 7, 2014Date of Patent: January 16, 2018Assignee: UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)Inventors: Kyung Rok Kim, Jong Yul Park, Sung-Ho Kim
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Patent number: 9859309Abstract: A display device in an embodiment according to the present invention includes a first substrate, a second substrate opposing the first substrate, and a transistor provided in the first substrate, a scanning signal line, a video signal line, and a pixel electrode that are electrically connected to the transistor, and a first insulating layer. The thickness of the first substrate is 0.3 mm or less, the first insulating layer contacts the first substrate, and is provided between the first substrate and the transistor, and the first insulating layer includes an organic insulating layer.Type: GrantFiled: August 19, 2016Date of Patent: January 2, 2018Assignee: Japan Display Inc.Inventors: Takenori Hirota, Hidekazu Miyake, Toshinari Sasaki, Shinichiro Oka
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Patent number: 9831279Abstract: An image sensor includes a photoelectric conversion portion providing a recessed region, a transfer gate provided in the recessed region, and a floating diffusion region adjacent the transfer gate. The transfer gate includes a first pattern and a second pattern, which are sequentially stacked in the recessed region and have different conductivity types from each other.Type: GrantFiled: September 7, 2016Date of Patent: November 28, 2017Assignee: Samsung Electronics Co., Ltd.Inventors: Younggu Jin, Jungchak Ahn
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Patent number: 9818788Abstract: A method for manufacturing a back-side illumination (BSI) complementary metal-oxide-semiconductor (CMOS) image sensor with a vertical transfer gate structure for improved quantum efficiency (QE) and global shutter efficiency (GSE) is provided. A sacrificial dielectric layer is formed over a semiconductor region. A first etch is performed into the sacrificial dielectric layer to form an opening exposing a photodetector in the semiconductor region. A semiconductor column is formed in the opening. A floating diffusion region (FDR) is formed over the semiconductor column and the sacrificial dielectric layer. A second etch is performed into the sacrificial dielectric layer to remove the sacrificial dielectric layer, and to form a lateral recess between the FDR and the photodetector. A gate is formed filling the lateral recess and laterally spaced from the semiconductor column by a gate dielectric layer. The BSI CMOS image sensor resulting from the method is also provided.Type: GrantFiled: November 8, 2016Date of Patent: November 14, 2017Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Jhy-Jyi Sze, Alexander Kalnitsky, Yimin Huang
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Patent number: 9795037Abstract: A touch panel includes: a uni-axially oriented base film; a transparent electrode pattern layer positioned on the uni-axially oriented base film; a first passivation layer formed in an edge region of the transparent electrode pattern layer and covering end portion side walls of the transparent electrode pattern layer; and a contact hole positioned on the first passivation layer and exposing the first passivation layer.Type: GrantFiled: October 27, 2015Date of Patent: October 17, 2017Assignee: Samsung Display Co., Ltd.Inventors: Koichi Sugitani, Hoon Kang, Chul Won Park, Yang-Ho Jung
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Patent number: 9755087Abstract: Approaches for silicon photonics integration are provided. A method includes: forming at least one encapsulating layer over and around a photodetector; thermally crystallizing the photodetector material after the forming the at least one encapsulating layer; and after the thermally crystallizing the photodetector material, forming a conformal sealing layer on the at least one encapsulating layer and over at least one device. The conformal sealing layer is configured to seal a crack in the at least one encapsulating layer. The photodetector and the at least one device are on a same substrate. The at least one device includes a complementary metal oxide semiconductor device or a passive photonics device.Type: GrantFiled: April 29, 2016Date of Patent: September 5, 2017Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Solomon Assefa, Tymon Barwicz, William M. Green, Marwan H. Khater, Jessie C. Rosenberg, Steven M. Shank
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Patent number: 9729809Abstract: A driving method of a semiconductor device that takes three-dimensional images with short duration is provided. In a first step, a light source starts to emit light, and first potential corresponding to the total amount of light received by a first photoelectric conversion element and a second photoelectric conversion element is written to a first charge accumulation region. In a second step, the light source stops emitting light and second potential corresponding to the total amount of light received by the first photoelectric conversion element and the second photoelectric conversion element is written to a second charge accumulation region. In a third step, first data corresponding to the potential written to the first charge accumulation region is read. In a fourth step, second data corresponding to the potential written to the second charge accumulation region is read.Type: GrantFiled: July 2, 2015Date of Patent: August 8, 2017Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventor: Yoshiyuki Kurokawa
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Patent number: 9711585Abstract: An organic light emitting diode display according to an example embodiment of the present invention includes: a substrate; a scan line and a data line that are insulated from one another and crossing each other on the substrate; a first transistor on the substrate and connected to the scan line and the data line; a second transistor connected to the first transistor; a first electrode connected to the second transistor and having a cutout; an organic emission layer on the first electrode; and a second electrode on the organic emission layer, wherein the cutout is at a position corresponding to the data line.Type: GrantFiled: September 30, 2015Date of Patent: July 18, 2017Assignee: Samsung Display Co., Ltd.Inventors: Yong Chul Kim, Dong-Yoon So, Tae Gon Kim
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Patent number: 9691812Abstract: Photodetector structures and methods of manufacture are provided. The method includes forming undercuts about detector material formed on a substrate. The method further includes encapsulating the detector to form airgaps from the undercuts. The method further includes annealing the detector material causing expansion of the detector material into the airgaps.Type: GrantFiled: April 29, 2015Date of Patent: June 27, 2017Assignee: GLOBALFOUNDRIES INC.Inventors: John J. Ellis-Monaghan, John C. S. Hall, Marwan H. Khater, Edward W. Kiewra, Steven M. Shank
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Patent number: 9666621Abstract: In a solid-state imaging device, a photoelectric conversion unit, a transfer transistor, and at least a part of electric charge holding unit, among pixel constituent elements, are disposed on a first semiconductor substrate. An amplifying transistor, a signal processing circuit other than a reset transistor, and a plurality of common output lines, to which signals are read out from a plurality of pixels, are disposed on a second semiconductor substrate.Type: GrantFiled: January 8, 2015Date of Patent: May 30, 2017Assignee: CANON KABUSHIKI KAISHAInventors: Kazuo Yamazaki, Tetsuya Itano, Nobuyuki Endo, Kyouhei Watanabe
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Patent number: 9640572Abstract: A unit pixel formed on a substrate and configured to convert incident light to an electrical signal is provided. The unit pixel includes: a source having a source voltage supplied thereto and having a silicide layer for metal contact formed thereabove; a drain spaced apart from the source and having a silicide layer for metal contact formed thereabove; a channel formed between the source and the drain and having a current flowed therethrough; an insulating layer formed above the channel; and a floating gate having a nonsal structure in which no silicide layer is formed thereabove in order to facilitate an absorption of light, formed above the insulating layer so as to be placed between the source and the drain, and configured to control an amount of current flowing through the channel by an electric field generated by electron-hole pairs generated by the incident light.Type: GrantFiled: December 12, 2014Date of Patent: May 2, 2017Assignee: BEYONDEYESInventors: Kwangsue Park, Byung Il Min, Dong Wook Nam
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Patent number: 9634173Abstract: There is described a photodetector comprising a semiconductor material having at least a region substantially depleted of free moving carriers, the photodetector comprising: a substrate of one of n-type and p-type; at least one charge collector along a surface of the substrate and having a doping-type opposite from the substrate; a substrate contact along the surface of the substrate spaced apart from the at least one charge collector to allow current to flow between the at least one charge collector and the substrate contact; and at least one non-conductive electrode positioned along the surface of the substrate in an alternating sequence with the at least one charge collector, and separated from the substrate by an insulator, and adapted to apply an electric potential to the substrate and cause charge carriers generated therein by application of a light source to advance towards the at least one charge collector due to the effects of an electric field, such that the at least one charge collector can measureType: GrantFiled: July 26, 2011Date of Patent: April 25, 2017Assignee: Polyvalor, Limited PartnershipInventor: Yves Audet
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Patent number: 9577008Abstract: A problem in that a light emitting element slightly emits light is solved by an off current of a thin film transistor connected in series to the light emitting element, thereby a display device which can perform a clear display by increasing contrast, and a driving method thereof are provided. When the thin film transistor connected in series to the light emitting element is turned off, a charge held in the capacitance of the light emitting element itself is discharged. Even when an off current is generated at the thin film transistor connected in series to the light emitting element, this off current charges this capacitance until the capacitance of the light emitting element itself holds a predetermined voltage again. Accordingly, the off current of the thin film transistor does not contribute to light emission. In this manner, a slight light emission of the light emitting element can be reduced.Type: GrantFiled: December 20, 2013Date of Patent: February 21, 2017Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Hiroyuki Miyake, Tomoyuki Iwabuchi
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Patent number: 9577012Abstract: The present disclosure relates to an imaging element, an electronic device, and an information processing device capable of more easily providing a wider variety of photoelectric conversion outputs. An imaging element of the present disclosure includes: a photoelectric conversion element layer containing a photoelectric conversion element that photoelectrically converts incident light; a wiring layer formed in the photoelectric conversion element layer on the side opposite to a light entering plane of the incident light, and containing a wire for reading charges from the photoelectric conversion element; and a support substrate laminated on the photoelectric conversion element layer and the wiring layer, and containing another photoelectric conversion element. The present disclosure is applicable to an imaging element, an electronic device, and an information processing device.Type: GrantFiled: July 12, 2013Date of Patent: February 21, 2017Assignee: Sony CorporationInventors: Susumu Ooki, Masashi Nakata
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Patent number: 9570507Abstract: An image sensor pixel includes a semiconductor layer, a photosensitive region to accumulate photo-generated charge, a floating node, a trench, and an entrenched transfer gate. The photosensitive region and the trench are disposed within the semiconductor layer. The trench extends into the semiconductor layer between the photosensitive region and the floating node and the entrenched transfer gate is disposed within the trench to control transfer of the photo-generated charge from the photosensitive region to the floating node.Type: GrantFiled: May 17, 2013Date of Patent: February 14, 2017Assignee: OmniVision Technologies, Inc.Inventors: Hidetoshi Nozaki, Tiejun Dai
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Patent number: 9548307Abstract: An integrated circuit includes a first well of the first conductivity type formed in a semiconductor layer where the first well housing active devices and being connected to a first well potential, a second well of a second conductivity type formed in the semiconductor layer and encircling the first well where the second well housing active devices and being connected to a second well potential, and a buried layer of the second conductivity type formed under the first well and overlapping at least partially the second well encircling the first well. In an alternate embodiment, instead of the buried layer, the integrated circuit includes a third well of the second conductivity type formed in the semiconductor layer where the third well contains the first well and overlaps at least partially the second well encircling the first well.Type: GrantFiled: June 30, 2014Date of Patent: January 17, 2017Assignee: Alpha and Omega Semiconductor IncorporatedInventor: Shekar Mallikarjunaswamy
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Patent number: 9543356Abstract: CMOS image sensor pixel sensor cells, methods for fabricating the pixel sensor cells and design structures for fabricating the pixel sensor cells are designed to allow for back side illumination in global shutter mode by providing light shielding from back side illumination of at least one transistor within the pixel sensor cells. In a first particular generalized embodiment, a light shielding layer is located and formed interposed between a first semiconductor layer that includes a photoactive region and a second semiconductor layer that includes the at least a second transistor, or a floating diffusion, that is shielded by the light blocking layer. In a second generalized embodiment, a thin film transistor and a metal-insulator-metal capacitor are used in place of a floating diffusion, and located shielded in a dielectric isolated metallization stack over a carrier substrate.Type: GrantFiled: August 10, 2009Date of Patent: January 10, 2017Assignee: GLOBALFOUNDRIES INC.Inventors: Jeffrey P. Gambino, Mark D. Jaffe, John Ellis-Monaghan, Richard Rassel
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Patent number: 9508768Abstract: A method of manufacturing a semiconductor device, includes forming a trench in a semiconductor substrate having a first face and a second face by processing the first face of the semiconductor substrate, the trench including a first portion and a second portion located between the first portion and a plane including a first face, filling an insulator in the second portion such that a space remains in the first portion and the trench is closed, and forming a plurality of elements between the first face and the second face, wherein the space and the insulator form element isolation.Type: GrantFiled: March 25, 2014Date of Patent: November 29, 2016Assignee: CANON KABUSHIKI KAISHAInventor: Kazuo Kokumai
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Patent number: 9508873Abstract: Provided is a Schottky diode. The Schottky diode includes: a substrate; a core on the substrate; a metallic layer on the core; and a shell surrounding the core between the metallic layer and the substrate and adjusting a Fermi energy level of the core to form a Schottky junction between the core and the metallic layer.Type: GrantFiled: July 24, 2014Date of Patent: November 29, 2016Assignees: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE, NATIONAL SCIENCE FOUNDATIONInventors: Dongwoo Suh, Young Jun Kim, Wei Lu, Lin Chen
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Patent number: 9489972Abstract: A light source unit has a substrate, a light source that is mounted to the substrate. The light source includes; a first emission part that emits a forward light, the forward light being a laser light in an oscillation state; a second emission part that is located on a side opposite to the first emission part and that emits a rearward light, the rearward light being a laser light in an oscillation state; and a light leakage part located at a position different from the first emission part and the second emission part. The light source further includes a photodetector that is provided on the substrate, wherein the photodetector has a light receiving surface for detecting a leakage light that leaks from the light leakage part.Type: GrantFiled: March 13, 2015Date of Patent: November 8, 2016Assignees: SAE MAGNETICS (H.K.) LTD., TDK CORPORATION, ROHM CO., LTD.Inventors: Takashi Honda, Seiichi Takayama, Ryuji Fujii, Koji Shimazawa, Tsuguki Noma, Yoshiteru Nagai
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Patent number: 9478582Abstract: A pixel cell, and a method of use thereof, the pixel cell including: an output, a photosensor configured to generate a first measuring current in a first measurement cycle and a second measuring current in a second measurement cycle as a function of radiation, an output node, a power storage device configured so that in a first operating mode a current can be injected by the power storage device as a function of the first measuring current, and so that in a second operating mode the power storage device is configured to hold the injected current so that the injected current can be detected at the output node, and a switching unit configured to form a difference between the injected current and the second measuring current at the output node in a reading cycle and to couple the output node to the output.Type: GrantFiled: December 24, 2013Date of Patent: October 25, 2016Assignee: Fraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e.V.Inventor: Jens Doege
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Patent number: 9455295Abstract: There is provided a solid-state image sensor including a plurality of unit pixels arranged thereon, the plurality of unit pixels each including a light receiving section which stores a charge generated by photoelectric conversion, a signal storage section which is connected to the light receiving section and has a structure of a MOS capacitor, and a signal output section to which a gate electrode of the MOS capacitor is connected.Type: GrantFiled: April 1, 2013Date of Patent: September 27, 2016Assignee: SONY CORPORATIONInventors: Kaneyoshi Takeshita, Kazuki Nomoto
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Patent number: 9450003Abstract: A solid-state imaging device including a photoelectric conversion element operable to generate electric charge according to the amount of incident light and to accumulate the electric charge in the inside thereof, an electric-charge holding region in which the electric charge generated through photoelectric conversion by the photoelectric conversion element is held until read out, and a transfer gate having a complete transfer path through which the electric charge accumulated in the photoelectric conversion element is completely transferred into the electric-charge holding region, and an intermediate transfer path through which the electric charge generated by the photoelectric conversion element during an exposure period and being in excess of a predetermined charge amount is transferred into the electric-charge holding region. The complete transfer path and the intermediate transfer path are formed in different regions.Type: GrantFiled: January 30, 2015Date of Patent: September 20, 2016Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Yusuke Oike, Takahiro Kawamura, Shinya Yamakawa, Ikuhiro Yamamura, Takashi Machida, Yasunori Sogoh, Naoki Saka
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Patent number: 9380239Abstract: An imaging system includes a plurality of pixel circuits each having a photodiode, a biasing circuit and a charge-to-voltage converter. The photodiode is configured to generate charges in response to light or radiation. The biasing circuit is configured to provide a constant bias voltage across the photodiode so as to drain the charges generated by the photodiode. The charge-to-voltage converter is configured to accumulate the charges drained by the biasing circuit and convert the accumulated charges into a corresponding output voltage.Type: GrantFiled: September 11, 2014Date of Patent: June 28, 2016Assignee: VARIAN MEDICAL SYSTEMS, INC.Inventors: Arundhuti Ganguly, Pieter Gerhard Roos
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Patent number: 9368653Abstract: Approaches for silicon photonics integration are provided. A method includes: forming at least one encapsulating layer over and around a photodetector; thermally crystallizing the photodetector material after the forming the at least one encapsulating layer; and after the thermally crystallizing the photodetector material, forming a conformal sealing layer on the at least one encapsulating layer and over at least one device. The conformal sealing layer is configured to seal a crack in the at least one encapsulating layer. The photodetector and the at least one device are on a same substrate. The at least one device includes a complementary metal oxide semiconductor device or a passive photonics device.Type: GrantFiled: December 23, 2014Date of Patent: June 14, 2016Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Solomon Assefa, Tymon Barwicz, William M. Green, Marwan H. Khater, Jessie C. Rosenberg, Steven M. Shank
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Patent number: 9344658Abstract: A pixel cell includes a photodiode disposed within a first semiconductor chip for accumulating an image charge in response to light incident upon the photodiode. A transfer transistor is disposed within the first semiconductor chip and coupled to the photodiode to transfer the image charge from the photodiode. A bias voltage generation circuit disposed within a second semiconductor chip for generating a bias voltage. The bias voltage generation circuit is coupled to the first semiconductor chip to bias the photodiode with the bias voltage. The bias voltage is negative with respect to a ground voltage of the second semiconductor chip. A floating diffusion is disposed within the second semiconductor chip. The transfer transistor is coupled to transfer the image charge from the photodiode on the first semiconductor chip to the floating diffusion on the second semiconductor chip.Type: GrantFiled: July 31, 2014Date of Patent: May 17, 2016Assignee: OmniVision Technologies, Inc.Inventors: Tiejun Dai, Rui Wang, Dyson H. Tai, Sohei Manabe
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Patent number: 9324758Abstract: A depth pixel includes a photo detection region, first and second photo gates and first and second floating diffusion regions. The photo detection region collects photo charges based on light reflected by an object. The collected photo charges are drifted in a first direction and a second direction different from the first direction based on an internal electric field in the photo detection region. The first photo gate is activated in response to a first photo control signal. The first floating diffusion region accumulates first photo charges drifted in the first direction if the first photo gate is activated. The second photo gate is activated in response to the first photo control signal. The second floating diffusion region accumulates second photo charges drifted in the second direction if the second photo gate is activated.Type: GrantFiled: November 12, 2013Date of Patent: April 26, 2016Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Min-Seok Oh, Hae-Kyung Kong, Tae Chan Kim, Jung Chak Ahn, Moo Sup Lim
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Patent number: 9323123Abstract: The present invention provides a structure of a pixel, which has a simple structure and employs an arrangement where a terminal of the storage capacitor Cst is of the same potential as the gate line. In other words, under a condition of not reducing aperture ratio, an arrangement of two (or three) gate lines is used, of which one is used to early set the voltage of the pixel electrode to a reference voltage by one period of line scanning time and, also, which is set to partly overlap the pixel electrode of a structure of another pixel to provide a storage capacitor, so as to shorten the charging time of the pixel unit and increase the charging speed of the pixel unit.Type: GrantFiled: January 21, 2014Date of Patent: April 26, 2016Assignee: Shenzhen China Star Optoelectronics Technology Co., LtdInventor: Xiangyang Xu
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Patent number: 9281340Abstract: A manufacturing method for a photoelectric conversion apparatus in which a microlens is arranged for multiple electric charge accumulation regions formed on a semiconductor substrate, includes forming a first impurity region of a first conductive type on the semiconductor substrate; and forming a second impurity region of a second conductive type that is opposite the first conductive type in a part of the first impurity region to isolate the first impurity region into multiple regions such that each of the multiple electric charge accumulation regions includes isolated first impurity regions.Type: GrantFiled: November 19, 2014Date of Patent: March 8, 2016Assignee: CANON KABUSHIKI KAISHAInventor: Junji Iwata
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Patent number: 9245823Abstract: There is provided an imaging device including a semiconductor having a light-receiving portion that performs photoelectric conversion of incident light, electrically conductive wirings, and a contact group including contacts that have different sizes and connect the semiconductor and the electrically conductive wirings.Type: GrantFiled: March 14, 2014Date of Patent: January 26, 2016Assignee: SONY CORPORATIONInventors: Shunsuke Ishii, Satoshi Keino, Tomohiro Wada
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Patent number: 9224834Abstract: An N+ region 2a and a P+ region 3a are formed in a Si pillar 6. HfO2 layers 9a and 9c, TiN layers 10b and 10d, and SiO2 layers 11b and 11d are formed to surround the Si pillar 6. Then contact portions 21a and 21b are respectively formed in side surfaces of the N+ region 2a and the P+ region 3a and a side surface of the TiN layer 10d. Then Si and Ni atoms are injected in a direction perpendicular to an upper surface of an i-layer substrate 1 from above the Si pillar 6 to form a Si layer and a Ni layer. Subsequently, a heat treatment is performed to expand NiSi layers 18a and 22 in a horizontal direction by Ni-silicidation. As a result, the NiSi layers 18a and 22 connect to the N+ region 2a and the P+ region 3a or the TiN layer 10d.Type: GrantFiled: April 7, 2015Date of Patent: December 29, 2015Assignee: Unisantis Electronics Singapore Pte. Ltd.Inventors: Fujio Masuoka, Nozomu Harada
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Patent number: 9202829Abstract: A light sensor is formed by an array of photodiodes comprising a plurality of regions of a first conductivity type that have been formed in a semiconductor layer or a substrate of a second conductivity type, and deep trenches placed between regions of the first conductivity type. Trenches extend deep into the substrate and have a high density of interface traps at the trench-silicon interface. A large portion of photocarriers generated by infrared recombines at the trench-silicon interface, and as a result, the spectral sensitivity of the light sensor is diminished in the infrared spectrum.Type: GrantFiled: June 4, 2013Date of Patent: December 1, 2015Inventor: Donghyuk Ju
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Patent number: 9196647Abstract: An image pickup unit includes: an image pickup section including a plurality of pixels, the plurality of pixels each including a photoelectric converter device and a field-effect transistor; and a driving section reading out a signal charge with use of the transistor, the signal charge being accumulated in each of the plurality of pixels. The driving section turns off the transistor by applying an off-voltage to the transistor, the off-voltage being set in consideration of an off-leakage current between a source and a drain of the transistor.Type: GrantFiled: February 15, 2013Date of Patent: November 24, 2015Assignee: SONY CORPORATIONInventors: Michiru Senda, Tsutomu Tanaka, Yasuhiro Yamada, Makoto Takatoku
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Patent number: 9165960Abstract: A pixel circuit, an active sensing array, a sensing device, and a driving method thereof are provided. The pixel circuit includes a sensing transistor, a reset transistor, and a storage capacitor. The sensing transistor is electrically connected to a sensing element and a data line. The reset transistor is electrically connected to a first scan line and the sensing transistor. The storage capacitor is electrically connected to the sensing transistor and a second scan line. During a compensation period, the reset transistor is turned on in response to a first scanning pulse from the first scan line, so that the sensing transistor is connected into a diode configuration, and the storage capacitor charges and discharges to a threshold voltage of the sensing transistor through the sensing transistor having the diode configuration in response to switching of a level of the data line.Type: GrantFiled: June 10, 2013Date of Patent: October 20, 2015Assignee: Industrial Technology Research InstituteInventors: Ya-Hsiang Tai, Bo-Cheng Chen, Lu-Sheng Chou, Bo-Wen Xiao, Heng-Yin Chen
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Patent number: 9153667Abstract: A method for making a thin film transistor, the method comprising: applying a gate electrode on an insulating substrate; covering the gate electrode with an insulating layer; forming a carbon nanotube layer on a growing substrate, wherein the carbon nanotube layer comprises a plurality of carbon nanotubes; transfer printing the carbon nanotube layer from the growing substrate onto the insulating layer, wherein the insulating layer insulates the carbon nanotube layer from the gate electrode; and placing a source electrode and a drain electrode spaced from each other and electrically connected to two opposite ends of at least one of the plurality of carbon nanotubes.Type: GrantFiled: October 22, 2013Date of Patent: October 6, 2015Assignees: Tsinghua University, HON HAI PRECISION INDUSTRY CO., LTD.Inventors: Qun-Qing Li, Xue-Shen Wang, Kai-Li Jiang, Shou-Shan Fan
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Patent number: 9147708Abstract: An image sensor including a first semiconductor region of a first conductivity type that is arranged in a substrate, a second semiconductor region of a second conductivity type that is arranged in the first semiconductor region to form a charge accumulation region. The second semiconductor region includes a plurality of portions arranged in a direction along a surface of the substrate. A potential barrier is formed between the plurality of portions. The second semiconductor region is wholly depleted by expansion of a depletion region from the first semiconductor region to the second semiconductor region. A finally-depleted portion to be finally depleted, of the second semiconductor region, is depleted by the expansion of the depletion region from a portion of the first semiconductor region, located in a lateral direction of the finally-depleted portion.Type: GrantFiled: January 9, 2013Date of Patent: September 29, 2015Assignee: Canon Kabushiki KaishaInventors: Akira Okita, Masahiro Kobayashi
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Patent number: 9093373Abstract: An integrated circuit includes a p-type region formed beneath a surface of a semiconductor substrate, and an n-type region formed beneath the surface of the semiconductor substrate. The n-type region meets the p-type region at a p-n junction. A diffusion barrier structure, which is beneath the surface of the semiconductor substrate and extends along a side of the p-n junction, limits lateral diffusion between the p-type region and n-type region.Type: GrantFiled: August 13, 2013Date of Patent: July 28, 2015Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chin-Chia Chang, Han-Wei Yang, Chen-Chung Lai, Kang-Min Kuo, Bor-Zen Tien
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Patent number: 9076706Abstract: An image sensor based on a depth pixel structure is provided. The image sensor may include a pixel including a photodiode, and the photodiode may include a transfer gate to transfer, to a floating diffusion node, an electron generated by a light reflected from an object.Type: GrantFiled: January 5, 2012Date of Patent: July 7, 2015Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Seong Jin Kim, Sang Wook Han, Albert Theuwissen
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Patent number: 9059025Abstract: A semiconductor chip having a photonics device and a CMOS device which includes a photonics device portion and a CMOS device portion on a semiconductor chip; a metal or polysilicon gate on the CMOS device portion, the metal or polysilicon gate having a gate extension that extends toward the photonics device portion; a germanium gate on the photonics device portion such that the germanium gate is coplanar with the metal or polysilicon gate, the germanium gate having a gate extension that extends toward the CMOS device portion, the germanium gate extension and metal or polysilicon gate extension joined together to form a common gate; spacers formed on the germanium gate and the metal or polysilicon gate; and nitride encapsulation formed on the germanium gate.Type: GrantFiled: August 30, 2013Date of Patent: June 16, 2015Assignee: International Business Machines CorporationInventors: Solomon Assefa, William M. J. Green, Steven M. Shank, Yurii A. Vlasov
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Publication number: 20150145006Abstract: The semiconductor device includes a plurality of pixels arranged in rows and columns, and first transistors fewer than the number of the plurality of pixels. The plurality of pixels each includes a photodiode and an amplifier circuit. The amplifier circuit holds the accumulated charge and includes at least a second transistor electrically connected to a cathode of the photodiode. The cathode of the photodiode in the pixel in an n-th row and the cathode of the photodiode in the pixel in an (n+1)-th row are electrically connected to the first transistor. The number n is a natural number. The pixel in the n-th row and the pixel in the (n+1)-th row are in an identical column.Type: ApplicationFiled: February 2, 2015Publication date: May 28, 2015Inventor: Hikaru TAMURA
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Patent number: 9041071Abstract: A unit pixel of an image sensor includes a photoelectric conversion region, an isolation region, a floating diffusion region and a transfer gate. The photoelectric conversion region is formed in a semiconductor substrate. The isolation region surrounds the photoelectric conversion region, extends substantially vertically with respect to a first surface of the semiconductor substrate, and crosses the incident side of the photoelectric conversion region so as to block leakage light and diffusion carriers. The floating diffusion region is disposed in the semiconductor substrate above the photoelectric conversion region. The transfer gate is disposed adjacent to the photoelectric conversion region and the floating diffusion region, extends substantially vertically with respect to the first surface of the semiconductor substrate, and transmits the photo-charges from the photoelectric conversion region to the floating diffusion region.Type: GrantFiled: January 10, 2013Date of Patent: May 26, 2015Assignee: Samsung Electronics Co., Ltd.Inventor: Jung-Chak Ahn
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Patent number: 9041080Abstract: To provide a light-emitting element where electrons are efficiently injected into a Ge light emission layer and light can be efficiently emitted, the light-emitting element has a barrier layer 3 which is formed on an insulating film 2, worked in a size in which quantum confinement effect manifests and made of monocrystalline Si, a p-type diffused layer electrode 5 and an n-type diffused layer electrode 6 respectively provided at both ends of the barrier layer 3, and a monocrystalline Ge light emission part 13 provided on the barrier layer 3 between the electrodes 5, 6. At least a part of current that flows between the electrodes 5, 6 flows in the barrier layer 3 in a horizontal direction with respect to a substrate 1.Type: GrantFiled: August 2, 2012Date of Patent: May 26, 2015Assignee: HITACHI, LTD.Inventors: Kazuki Tani, Shinichi Saito, Katsuya Oda
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Patent number: 9041079Abstract: An optoelectronic device may include an insulating substrate, a semiconductor channel region located on the insulating substrate, and a source region and a drain region in contact with the semiconductor channel region. A photoswitchable material may be located on the semiconductor channel region between the source region and the drain region, such that the photoswitchable material includes a first structural state based on being exposed to a first optical wavelength, and includes a second structural state based on being exposed to a second optical wavelength. The first structural state causes a first electrical current to flow between the source region and the drain region, while the second structural state causes a second electrical current to flow between the source region and the drain region.Type: GrantFiled: June 23, 2014Date of Patent: May 26, 2015Assignee: International Business Machines CorporationInventors: Ali Afzali-Ardakani, Tze-Chiang Chen, Bahman Hekmatshoartabari
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Patent number: 9041132Abstract: A solid-state image pickup device includes a plurality of pixels, each of the pixels including a photoelectric conversion portion, a charge holding portion, a floating diffusion, and a transfer portion. The pixel also includes a beneath-holding-portion isolation layer and a pixel isolation layer. An end portion on a photoelectric conversion portion side of the pixel isolation layer is away from the photoelectric conversion portion compared to an end portion on a photoelectric conversion portion side of the beneath-holding-portion isolation layer, and an N-type semiconductor region constituting part of the photoelectric conversion portion is disposed under at least part of the beneath-holding-portion isolation layer.Type: GrantFiled: September 29, 2010Date of Patent: May 26, 2015Assignee: CANON KABUSHIKI KAISHAInventors: Masahiro Kobayashi, Yuichiro Yamashita, Yusuke Onuki